HITACHI 2SC4693

2SC4693
Silicon NPN Epitaxial Planar
Application
VHF Wide band amplifier
Features
• High gain bandwidth product
fT = 2.5 GHz Typ.
• Large collector power dissipation
P C = 900 mW
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
2SC4693
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
300
mA
Collector peak current
iC (peak)
500
mA
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
I C = 100 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
20
—
—
V
I C = 1 mA, RBE = ∞
Collector cutoff current
I CBO
—
—
1.0
µA
VCB = 25 V, IE = 0
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 3 V, IC = 0
DC current transfer ratio
hFE
50
—
200
Gain bandwidth product
fT
1.5
2.5
—
GHz
VCE = 5 V, IC = 50 mA
Collector output capacitance
Cob
—
4.5
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
2
VCE = 5 V, IC = 50 mA
2SC4693
Typical Output Characteristics
200
900
600
300
3.5
3.0
2.0
1.5
100
1.0
0.5 mA
IB = 0
0
50
100
Ambient Temperature Ta (°C)
0
150
DC Current Transfer Ratio
vs. Collector Current
VCE = 5 V
Pulse Test
Ta = 75°C
100
25
1.0
2.0
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage
vs. Collector Current
–25
10
10
Base to Emitter Voltage VBE (V)
1,000
DC Current Transfer Ratio hFE
4.0
2.5
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
VCE = 5 V
Pulse Test
Ta = –25°C
1.0
75
25
0.1
1
10
100
Collector Current IC (mA)
1,000
1
10
100
Collector Current IC (mA)
1,000
3
2SC4693
Gain Bandwidth Product
vs. Collector Current
10,000
1.0
Gain Bandwidth Product fT (MHz)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
Ta = 75°C
25
–25
0.1
IC = 10 IB
Pulse Test
VCE = 5 V
1,000
100
0.01
1
10
100
Collector Current IC (mA)
1,000
1
10
100
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance
vs. Collector to Base Voltage
100
10
1
4
f = 1 MHz
IE = 0
10
100
Collector to Base Voltage VCB (V)
1,000
Unit: mm
4.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.5 ± 0.1
10.1 Min
2.3 Max
8.0 ± 0.5
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.