2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 300 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 300 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 µA VCB = 250 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — — 0.5 V I C = 30 mA, IB = 3 mA DC current transfer ratio hFE 60 — 150 Gain bandwidth product fT — 80 — MHz VCE = 6 V, IC = 5 mA Collector output capacitance Cob — 1.5 — pF VCB = 10 V, IE = 0, f = 1 MHz Note: Marking is “XV–”. 2 VCE = 6 V, IC = 2 mA 2SC4702 Typical Output Characteristics 10 150 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 50 100 80 Pulse Test 60 8 50 6 40 4 30 2 20 IB = 10 µA 0 50 100 Ambient Temperature Ta (°C) 0 150 20 40 60 80 100 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 100 1,000 25 10 –25 1.0 VCE = 6 V Pulse Test 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE Collector Current IC (mA) Ta = 75°C Ta = 75°C 25 –25 100 10 VCE = 6 V Pulse Test 1 0.1 1.0 10 Collector Current IC (mA) 100 3 Collector to Emitter Saturation Voltage vs. Collector Current 10 IC/IB = 10 Pulse Test 1.0 Ta = 75°C 25 –25 0.1 0.01 0.1 Gain Bandwidth Product vs. Collector Current 1,000 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) 2SC4702 1.0 10 Collector Current IC (mA) 100 VCE = 6 V 100 10 1 0.1 1.0 10 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 4 100 f = 1 MHz IE = 0 10 1.0 0.1 0.1 1.0 10 100 Collector to Base Voltage VCB (V) 100 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 3 – 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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