2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 300 mA Collector peak current iC (peak) 500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 100 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 — — V I C = 1 mA, RBE = ∞ Collector cutoff current I CBO — — 1 µA VCB = 25 V, IE = 0 Emitter cutoff current I EBO — — 10 µA VEB = 3 V, IE = 0 DC current transfer ratio hFE 50 — 200 Gain bandwidth product fT 1.5 2.5 — GHz VCE = 5 V, IC = 50 mA Collector output capacitance Cob — 4.0 — pF VCB = 10 V, IE = 0, f = 1 MHz 2 VCE = 5 V, IC = 50 mA 2SC4308 Typical Output Characteristics 200 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 600 400 200 3.0 2.5 2.0 1.5 100 0.1 0.5mA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 DC Current Transfer Ratio vs. Collector Current 1.0 2.0 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage vs. Collector Current 10 VCE = 5 V Pulse Test Ta = 75°C 100 25 –25 10 Base to Emitter Voltage VBE (V) 1,000 DC Current Transfer Ratio hFE 0 5 4. 3. VCE = 5 V Pulse Test Ta = –25°C 1.0 25 75 0.1 1 10 100 Collector Current IC (mA) 1,000 1 10 100 Collector Current IC (mA) 1,000 3 2SC4308 Gain Bandwidth Product vs. Collector Current 1.0 10,000 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current Ta = 75°C 25 0.1 –25 IC = 10 IB Pulse Test VCE = 5 V 1,000 0.01 100 1 10 100 Collector Current IC (mA) 1,000 1 100 4 100 f = 1 MHz IE = 0 10 1 1,000 Emitter Input Capacitnce vs. Emitter to Base Votlage 10 100 Collector to Base Voltage VCB (V) Emitter Input Capacitance Cib (pF) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector Current 10 100 Collector Current IC (mA) f = 1 MHz IC = 0 10 1 0.1 1.0 10 Emitter to Base Voltage VEB (V) Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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