GFU30N03 Vishay Semiconductor New Product N-Channel Enhancement-Mode MOSFET H C N E ET R T F N TO-251 (IPAK) E D VDS 30V RDS(ON) 15mΩ ID 43A TM G 0.265 (6.73) 0.255 (6.48) 0.214 (5.43) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) D 0.050 (1.27) 0.035 (0.89) S Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters and motor drives • Fast Switching for High Efficiency 0.245 (6.22) 0.235 (5.97) G G 0.094 (2.39) 0.087 (2.21) S Mechanical Data Case: JEDEC TO-251 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g 0.375 (9.53) 0.350 (8.89) 0.035 (0.89) 0.028 (0.71) 0.102 (2.59) 0.078 (1.98) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 43 IDM 80 PD 44.5 17.8 W TJ, Tstg –55 to 150 °C RθJC 2.8 RθJA 125 Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance (2) Junction-to-Ambient Thermal Resistance Unit V A °C/W Note: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB mounted Document Number 74573 17-Dec-01 www.vishay.com 1 GFU30N03 Vishay Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – 3.0 V IGSS VGS = ±20V, VDS = 0V – – ±100 nA IDSS VDS = 30V, VGS = 0V – – 1 µA ID(on) VDS ≥ 5V, VGS = 10V 40 – – A VGS = 10V, ID = 20A – 12.5 15 VGS = 4.5V, ID = 17A – 17.5 21 VDS = 15V, ID = 20A – 35 – VDS=15V, VGS=5.0V, ID =20A – 16 22 – 34 48 – 5.7 – – 4.7 – – 10 20 – 9 18 – 47 75 – 13 26 J Static Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time VDS = 15V, VGS = 10V ID = 20A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time ID ≅ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 1850 – Output Capacitance Coss VDS = 15V – 315 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 150 – IS – – – 20 A VSD IS = 20A, VGS = 0V – 0.91 1.3 V pF Source-Drain Diode Max Diode Forward Current (1) Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH www.vishay.com 2 Document Number 74573 17-Dec-01 GFU30N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 60 VGS = 10V 5.0V VDS = 10V 50 4.5V 6.0V 60 ID -- Drain Current (A) ID -- Drain Source Current (A) 70 4.0V 50 40 3.5V 30 20 VGS = 3.0V 40 30 20 --55°C TJ = 125°C 10 10 0 25°C 0 0 1 2 3 4 5 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 2.0 5 0.035 0.03 1.8 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.6 1.4 1.2 1 0.8 0.6 --50 0.025 VGS = 4.5V 0.02 0.015 VGS = 10V 0.01 0.005 0 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 ID -- Drain Current (A) TJ -- Junction Temperature (°C) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 RDS(ON) -- On-Resistance (Normalized) VGS = 10V ID = 20A 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Document Number 74573 17-Dec-01 www.vishay.com 3 GFU30N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.05 VDS = 15V ID = 20A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 20A 0.04 0.03 TJ = 125°C 0.02 25°C 0.01 0 8 6 4 2 0 2 4 6 8 10 0 10 15 20 25 30 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 35 100 2500 VGS = 0V f = 1MHZ VGS = 0V 2000 Ciss IS -- Source Current (A) C -- Capacitance (pF) 5 1500 1000 500 10 TJ = 125°C 1 25°C 0.1 --55°C Coss Crss 0 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) www.vishay.com 4 25 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD -- Source-to-Drain Voltage (V) Document Number 74573 17-Dec-01 GFU30N03 Vishay Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance ID = 250µA 42 RθJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) 43 41 40 39 38 37 36 --50 --25 0 25 50 75 100 125 1. Duty Cycle, D = t1/t2 2. RθJA(t) = RθJA(norm) *RθJA 3. RθJA = 2.0°C/W 4. TJ -- TA = PDM* RθJA(t) 150 Pulse Duration (sec.) TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 1000 1000 ID -- Drain Current (A) 800 600 400 0.001 0.01 0.1 1 10 0µ s 1m s 10 m 10 RDS(ON) Limit s DC VGS = 10V Single Pulse RθJC = 2.0°C/W TA = 25°C 200 0 0.0001 10 100 1 0.1 1 10 100 VDS -- Drain-Source Voltage (V) Document Number 74573 17-Dec-01 www.vishay.com 5