Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KL2 vorläufiges Datenblatt preliminary datasheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T j = 25°C T j = -25°C VCES 3300 3300 V Kollektor-Dauergleichstrom DC-collector current T C = 80°C T C = 25 °C IC,nom. 1200 A IC 2300 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 2400 A Gesamt-Verlustleistung total power dissipation T C=25°C, Transistor Ptot 14,7 kW VGES +/- 20V V IF 1200 A IFRM 2400 A I2t 440.000 A2s Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125°C Spitzenverlustleistung der Diode maximum power dissipation diode T j = 125°C PRQM 1.500 kW Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 6.000 V Teilentladungs-Aussetzspannung partial discharge extinction voltage RMS, f = 50 Hz, QPD £ 10 pC (acc. to IEC 1287) VISOL 2.600 V Charakteristische Werte / Characteristic values min. typ. max. - 3,00 3,65 V - 3,70 4,45 V VGE(th) 4,2 5,1 6,0 V Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 1200A, VGE = 15V, Tvj = 25°C VCE sat IC = 1200A, VGE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 120 mA, VCE = VGE, T vj = 25°C Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 145 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 8 - nF Gateladung gate charge VGE = -15V ... + 15V, VCE = 1800V QG - 22 - µC Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 3300V, VGE = 0V, Tvj = 25°C ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: J. Biermann date of publication : 2002-04-23 approved by: Christoh Lübke; 2002-04-30 revision: 3 1 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KL2 vorläufiges Datenblatt preliminary datasheet Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCC = 1800V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCC = 1800V td,on VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C tr VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C td,off VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C VGE = ±15V, RG = 2,7W, CGE = 330nF, T vj = 25°C 700 ns 700 ns - 450 ns - 450 ns - 2500 - ns - 2700 - ns tf - 220 - ns - 330 - ns Eon - 2700 - mWs Eoff - 1590 - mWs ISC - 5200 - A LsCE - 10 - nH RCC'+EE' - 0,12 - mW min. typ. max. - 2,60 3,35 V - 2,45 3,30 V - 1180 - A - 1300 - A - 650 - µAs - 1200 - µAs - 430 - mWs - 1150 - mWs IC = 1200 A, VCC = 1800V, VGE = 15V RG = 1,2W, CGE = 330nF, T vj = 125°C, LS = 40nH IC = 1200 A, VCC = 1800V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse RG = 2,7W, CGE = 330nF, T vj = 125°C, LS = 40nH Kurzschlußverhalten SC Data T Vj£125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt tP £ 10µsec, VGE £ 15V Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip - IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse max. IC = 1200 A, VCC = 1800V VGE = ±15V, RG = 2,7W, CGE = 330nF,T vj = 125°C Fallzeit (induktive Last) fall time (inductive load) typ. T = 25°C Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF = 1200 A, VGE = 0V, Tvj = 25°C Rückstromspitze peak reverse recovery current IF = 1200 A, - diF/dt = 4900 A/µsec VF IF = 1200 A, VGE = 0V, Tvj = 125°C VR = 1800V, VGE = -10V, Tvj = 25°C IRM VR = 1800V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 1200 A, - diF/dt = 4900 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C Qr VR = 1800V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1200 A, - diF/dt = 4900 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C 2 (9) Erec FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KL2 vorläufiges Datenblatt preliminary datasheet Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,0085 K/W - - 0,0170 K/W RthCK - 0,006 - K/W T vj - - 150 °C Betriebstemperatur operation temperature T vj op -40 - 125 °C Lagertemperatur storage temperature T stg -40 - 125 °C Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module lPaste = 1 W/m*K / lgrease = 1 W/m*K RthJC Diode/Diode, DC Höchstzulässige Sperrschichttemperatur maximum junction temperature Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate AlSiC Innere Isolation internal insulation AlN Kriechstrecke creepage distance 32,2 mm Luftstrecke clearance 19,1 mm CTI comperative tracking index > 400 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M4 M1 5 Nm M2 2 Nm 8 .. 10 Nm 1500 g terminals M8 Gewicht weight G Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information FZ 1200 R 33 KL2 IGBT-Module IGBT-Modules vorläufiges Datenblatt preliminary datasheet Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 2400 T = 25°C 2000 T = 125°C IC [A] 1600 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 6,0 6,5 7,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) Tvj = 125°C 2400 2000 VGE = 8V VGE = 9V VGE = 10V VGE = 12V IC [A] 1600 VGE = 15V VGE = 20V 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 VCE [V] 4 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information FZ 1200 R 33 KL2 IGBT-Module IGBT-Modules vorläufiges Datenblatt preliminary datasheet IC = f (VGE) Übertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20V 2400 T = 25°C 2000 T = 125°C IC [A] 1600 1200 800 400 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 2400 Tj = 25°C Tj = 125°C 2000 IF [A] 1600 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VF [V] 5 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information FZ 1200 R 33 KL2 IGBT-Module IGBT-Modules vorläufiges Datenblatt preliminary datasheet Schaltverluste (typisch) Switching losses (typical) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) RGom = 1,2 W, RGoff = 2,7 W, CGE = 330 nF, VCE = 1800V, Tj = 125°C 8000 Eon 7000 Eoff Erec E [mJ] 6000 5000 4000 3000 2000 1000 0 0 300 600 900 1200 1500 1800 2100 2400 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 1200 A , CGE = 330 nF, VCE = 1800V , Tj = 125°C 14000 Eon 12000 Eoff Erec E [mJ] 10000 8000 6000 4000 2000 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG [W] 6 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information FZ 1200 R 33 KL2 IGBT-Module IGBT-Modules vorläufiges Datenblatt preliminary datasheet Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) RG,off = 2,7W, CGE = 330 nF Tvj= 125°C 3000 2400 IC [A] 1800 1200 IC,Modul IC,Chip 600 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) Tvj= 125°C 3000 2400 IR [A] 1800 1200 600 0 0 500 1000 1500 2000 2500 3000 3500 VR [V] 7 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information FZ 1200 R 33 KL2 IGBT-Module IGBT-Modules vorläufiges Datenblatt preliminary datasheet Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 0,1 Zth:IGBT Zth:Diode ZthJC [K / W] 0,01 0,001 0,0001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] : IGBT ti [sec] : IGBT ri [K/kW] : Diode ti [sec] : Diode 1 2 3 4 1,56 4,25 1,26 1,44 0,0068 0,0642 0,3209 2,0212 3,11 8,49 2,52 2,88 0,0068 0,0642 0,3209 2,0212 8 (9) FZ1200R33KL2_V Rev3.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KL2 vorläufiges Datenblatt preliminary datasheet Gehäusemaße / Schaltbild Package outline / Circuit diagram 9 (9) FZ1200R33KL2_V Rev3.xls