Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V TC = 80 °C IC,nom. 200 A TC = 25 °C IC 420 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80°C ICRM 400 A Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot 1,3 kW VGES +/- 20V V IF 200 A IFRM 400 A I2t 6,9 kA2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, t p = 10ms, T Vj = 125°C Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC = 200A, V GE = 15V, Tvj = 25°C VCE sat typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V IC = 200A, V GE = 15V, Tvj = 125°C Gate-Schwellenspannung gate threshold voltage IC = 8mA, VCE = VGE, Tvj = 25°C Gateladung gate charge VGE = -15V...+15V QG - 2,1 - µC Eingangskapazität input capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, VGE = 0V Cies - 13 - nF Rückwirkungskapazität reverse transfer capacitance f = 1MHz,Tvj = 25°C,V CE = 25V, VGE = 0V Cres - 0,85 - nF VCE = 1200V, VGE = 0V, Tvj = 25°C ICES - 8 192 µA - 800 - µA - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C prepared by: Mark Münzer date of publication: 07.02.2000 approved by: H. Hierholzer revision: 2 1(8) IGES Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Charakteristische Werte / Characteristic values min. typ. max. - 0,05 - µs - 0,06 - µs - 0,05 - µs - 0,07 - µs - 0,57 - µs - 0,57 - µs - 0,04 - µs - 0,05 - µs Eon - 22 - mWs Eoff - 23 - mWs ISC - 1250 - A LsCE - 25 - nH RCC‘+EE‘ - 0,60 - mΩ min. typ. max. - 1,8 2,3 V - 1,7 2,2 V Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7Ω, Tvj = 25°C td,on VGE = ±15V, R G = 4,7Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7Ω, Tvj = 25°C tr VGE = ±15V, R G = 4,7Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7Ω, Tvj = 25°C td,off VGE = ±15V, R G = 4,7Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, V CE = 600V VGE = ±15V, R G = 4,7Ω, Tvj = 25°C tf VGE = ±15V, R G = 4,7Ω, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data IC = 200A, V CE = 600V, VGE = 15V RG = 4,7Ω, Tvj = 125°C, LS = 60nH IC = 200A, V CE = 600V, VGE = 15V RG = 4,7Ω, Tvj = 125°C, LS = 60nH tP ≤ 10µsec, V GE ≤ 15V, R G = 4,7Ω TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chip TC=25°C Charakteristische Werte / Characteristic values Inversdiode / Free-Wheel Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 200A, V GE = 0V, Tvj = 25°C VF IF = 200A, V GE = 0V, Tvj = 125°C IF = 200A, - di F/dt = 4000A/µsec VR = 600V, VGE = -15V, T vj = 25°C IRM VR = 600V, VGE = -15V, T vj = 125°C Sperrverzögerungsladung recovered charge IF = 200A, - di F/dt = 4000A/µsec Abschaltenergie pro Puls reverse recovery energy IF = 200A, - di F/dt = 4000A/µsec VR = 600V, VGE = -15V, T vj = 25°C Qr VR = 600V, VGE = -15V, T vj = 125°C VR = 600V, VGE = -15V, T vj = 25°C Erec VR = 600V, VGE = -15V, T vj = 125°C Chopperdiode / Chopper Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 300A, V GE = 0V, Tvj = 25°C VF IF = 300A, V GE = 0V, Tvj = 125°C VR = 600V, VGE = -15V, T vj = 25°C IRM - A - A - 23 - µAs - 42 - µAs - 6 - mWs - 14 - mWs min. typ. max. - 1,8 2,3 V - 1,7 2,2 V - 348 - A - 420 - A IF = 300A, - di F/dt = 5400A/µsec VR = 600V, VGE = -15V, T vj = 25°C Qr VR = 600V, VGE = -15V, T vj = 125°C Abschaltenergie pro Puls reverse recovery energy 240 300 IF = 300A, - di F/dt = 5400A/µsec VR = 600V, VGE = -15V, T vj = 125°C Sperrverzögerungsladung recovered charge - - 28 - µAs - 58 - µAs - 9 - mWs - 21 - mWs IF = 300A, - di F/dt = 5400A/µsec VR = 600V, VGE = -15V, T vj = 25°C VR = 600V, VGE = -15V, T vj = 125°C 2(8) Erec Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,09 K/W - - 0,18 K/W RthCK - 0,01 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature Tvj - - 150 °C Betriebstemperatur operation temperature Top -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 150 °C RthJC Transistor / transistor, DC Innerer Wärmewiderstand thermal resistance, junction to case Diode/Diode, DC Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Παστε = 1 W/m * K / λ grease = 1 W/m * K Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 275 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M6 Gewicht weight M1 3 6 Nm M2 2,5 5 Nm G 420 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C = f (VCE) V GE = 15V 400 350 Tj = 25°C 300 Tj = 125°C IC [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C = f (VCE) T vj = 125°C 400 350 VGE = 17V 300 VGE = 15V VGE = 13V IC [A] 250 VGE = 11V VGE = 9V VGE = 7V 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 400 350 Tj = 25°C Tj = 125°C 300 IC [A] 250 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F = f (VF) 400 350 Tj = 25°C Tj = 125°C 300 IF [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = R goff =4,7 Ω, VCE = 600V, T j = 125°C 100 90 Eoff Eon 80 Erec E [mJ] 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 200A , V CE = 600V , T j = 125°C 100 90 Eoff Eon 80 Erec E [mJ] 70 60 50 40 30 20 10 0 0 4 8 12 16 20 24 28 32 RG [Ω] 6(8) Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) 1 ZthJC [K / W] 0,1 0,01 0,001 0,001 0,01 0,1 1 10 Zth:Diode Zth:IGBT 100 t [sec] i ri [K/kW] : IGBT τi [sec] : IGBT ri [K/kW] : Diode τi [sec] : Diode 1 2 3 4 40,08 30,51 19,37 0,04 0,006 0,029 0,043 1,014 49,13 73,21 37,92 19,74 0,006 0,035 0,033 0,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 4,7 Ohm, T vj = 125°C 450 400 350 IC [A] 300 250 200 150 100 50 IC,Modul 0 0 IC,Chip 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM200GAL120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GAL120DLC 8(8) Seriendatenblatt_BSM200GAL120DLC.xls