IRF530ND N-Channel Enhancement-Mode MOSFET DIE TM Chip Geometry T E F N E G VDS 100V RDS(ON) 0.11Ω ID 17A ct u d ro P New D Source Gate G Physical Characteristics • Die size : 3890 X 1880 µm (153.1 X 74.0 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag • Metal Thickness: Top: 3.0 µm Back: 1.4 µm • Die thickness: 9 - 13 mils • Bonding Area: Source: Full metalized surface of source region Gate: 412 x 512 µm • Recommended Wire Bonding: Source: 12 mil diameter Al wire (2 wires preferred) Gate: 5 mil diameter Al wire Maximum Ratings S Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • 175°C Operating Temperature • Ease of Paralleling • Fast Switching for High Efficiency • Simple Drive Requirements • Planar Technology (TA = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 V ID 17 12 IDM 60 PD 79 W 0.53 W/°C EAS 150 mJ IAR 9 A EAR 7.9 mJ dv/dt 5.0 V/ns TJ, Tstg –55 to 175 °C TC = 25°C TC = 100°C Continuous Drain Current VGS =10V Pulsed Drain Current(1) Maximum Power Dissipation TC = 25°C Linear Derating Factor Single Pulse Avalanche Energy (2) (1) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery (1) (3) Operating Junction and Storage Temperature Range Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 25V, starting TJ = 25°C, L = 3.1µH, RG = 25Ω, IAS = 9.0A (3) ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C A 6/30/99 IRF530ND N-Channel Enhancement-Mode MOSFET DIE Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0V, ID = 250µA 100 – – V Ref. to 25°C, ID = 1mA – 0.12 – V/°C Static Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient ∆V(BR)DSS/∆TJ Drain-Source On-State Resistance RDS(on) VGS = 10V, ID = 9A – – 0.11 Ω Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – 4.0 V gfs VDS = 50V, ID = 9A 6.4 – – S VDS = 100V, VGS = 0V – – 25 VDS=80V, VGS=0V, TJ=150°C – – 250 VGS = ± 20V – – ± 100 – – 44 – – 6.2 – – 21 – 6.4 – – 27 – – 37 – (2) (2) Forward Transconductance Drain-Source Leakage Current IDSS Gate-Source Forward Leakage IGSS µA nA Dynamic Total Gate Charge(2) Qg (2) Gate-Source Charge Qgs Gate-Drain (“Miller”) Charge (2) ID = 9A Qgd (2) Turn-On Delay Time td(on) (2) Rise Time Turn-Off Delay Time VDS = 80V, VGS = 10V tr (2) td(off) Fall Time(2) VDD = 50V ID = 9A, RG = 12Ω RD = 5.5Ω tf – 25 – – 4.5 – – 7.5 – nC ns Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6mm (0.25in.) from package and center of die contact Input Capacitance Ciss VGS = 0V – 640 – Output Capacitance Coss VDS = 25V – 160 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 88 – IS – – – 17 ISM – – – 60 VSD IS=9A, VGS=0V – – 1.3 V – 130 190 ns – 0.65 0.97 µC nH pF Source-Drain Diode Continuous Source Current (1) Pulsed Source Current Diode Forward Voltage(2) (2) Source-Drain Reverse Recovery Time trr (2) Source-Drain Reverse Recovery Charge Qrr IF = 9A, di/dt = 100A/µs Notes: (1) Repetitive rating; pulse width limited by max. junction temperature (2) Pulse width ≤ 300µs; duty cycle ≤ 2% A IRF530N N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Output Characteristics TC = 25°C Output Characteristics TC = 175°C 100 100 VGS = 15V VGS = 15V 10V 8.0V 7.0V ID – Drain Current (A) ID – Drain Current (A) 10V 6.0V 5.5V 10 5.0V 4.5V 1 0.1 1 10 4.5V 1 10 Transfer Characteristics On-Resistance vs. Junction Temperature RDS(ON) – Drain-to-Source On-Resistance (Ω) (Normalized) 175°C 10 6 7 8 9 10 3.0 VGS = 10V ID = 15A 2.5 2.0 1.5 1.0 0.5 0.0 –60 –40 –20 0 20 40 60 Capacitance Gate Charge 20 1200 VDS = 80V VDS = 50V VDS = 20V VGS – Gate-to-Source Voltage (V) ID = 9.0A Capacitance (pF) 1000 800 Ciss 400 Coss 200 Crss 0 1 80 100 120 140 160 180 TJ – Junction Temperature (°C) VGS – Gate-to-Source Voltage (V) 600 100 VDS – Drain-to-Source Voltage (V) 25°C VGS(th) Variance (V) 5.0V VDS – Drain-to-Source Voltage (V) VDS = 50V 5 6.0V 5.5V 10 1 0.1 100 100 1 4 8.0V 7.0V 10 VDS – Drain-to-Source Voltage (V) 16 12 8 4 0 100 0 5 10 15 20 25 30 QG – Total Gate Charge (nC) 35 40 45 IRF530N N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Source-Drain Diode Forward Voltage Maximum Safe Operating Area 1000 VGS = 0V 175°C ID – Drain Current (A) ISD – Reverse Drain Current (A) 100 25°C 10 100 it ) ON 10µs Lim S( RD 100µs 10 TC = 25°C TJ = 175°C 1 0.4 0.6 0.8 1.0 1.2 1.4 10ms 1 1 1.6 1ms 10 100 1000 VDS – Drain-to-Source Voltage (V) VSD – Source-to-Drain Forward Voltage (V) Switching Test Circuit Switching Waveforms RD VDS VDS 90% VGS RG D.U.T + – VDD 10 V Pulse Width ≤ 1µs Duty Factor ≤ 0.1% 10% VGS td(on) tr td(off) tf IRF530N N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Drain Current vs. Case Temperature ID – Drain Current (A) 20 15 10 5 0 25 50 75 100 125 150 175 TC – Case Temperature (°C) Avalanche Energy vs. Drain Current 350 EAS – Single Pulse Energy (mJ) VDD = 25V 300 250 200 ID = 3.7A 150 6.4A 100 9.0A 50 0 25 50 75 100 125 150 175 Starting TJ – Junction Temperature (°C) Normalized Thermal Transient Impedance, Junction-to-Ambient ZJθC – Normalized Effective Transient Thermal Impedance 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 10–5 10–4 10–3 0.01 t1 – Square Wave Pulse Duration (sec) 0.1 1