ETC GF9926D

GF9926D
N-Channel Enhancement-Mode MOSFET Die
VDS 20V RDS(ON) 30mΩ ID 6.0A
H
C
N
TRENFET oduct
GE New Pr
TM
Chip Geometry
Gate
Source
D
G
Physical Characteristics
• Die size : 1800 X 1120µm (70.9 X 44.1 mils)
• Metalization:
Top: Al/Si/Cu
Back: Ti/Ni/Ag
• Metal Thickness:
Top: 3.0µm
Back: 1.4µm
• Die thickness: 9 - 13 mils
• Bonding Area:
Source: Full metalized surface of source region
Gate: 181 x 181µm
• Recommended Wire Bonding:
Source: 2 mil ∅ Au wire (3 or more wires preferred)
Gate: 2 mil ∅ Au wire
S
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Fast Switching
• High temperature soldering in accordance
with CECC802/Reflow guaranteed
• Logic Level
• Ideal for Li ion battery pack applications
Note: More source wires can further improve performance
Maximum Ratings and Thermal Characteristics (T
Parameter
A
= 25°C unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 10
ID
6.0
4.8
IDM
20
Continuous Source Current (Diode Conduction)(1)
IS
1.7
TA = 25°C
TA = 70°C
PD
2.0
1.3
W
TJ, Tstg
–55 to 150
°C
RθJA
62.5
°C/W
TA = 25°C
TA = 70°C
Continuous Drain Current
TJ = 150°C(1)
Pulsed Drain Current
Maximum Power Dissipation(1)
Operating Junction and Storage Temperature Range
(1)
Maximum Junction-to-Ambient
Thermal Resistance
Unit
V
A
Note: Maximum ratings are based on die packaged in a SO-8 Dual package. Actual rating can increase (or decrease),
depending on actual assembly method used
6/14/00
GF9926D
N-Channel Enhancement-Mode MOSFET Die
Electrical Characteristics (T
Parameter
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
20
–
–
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
0.6
–
–
V
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ± 8V
–
–
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20V, VGS = 0V
–
–
1
VDS=20V, VGS=0V, TJ=55°C
–
–
5
VDS ≥ 5V, VGS = 4.5V
20
–
–
VGS = 4.5V, ID = 6A
–
22
30
VGS = 2.5V, ID = 5.2A
–
28
40
VDS = 10V, ID = 6A
–
24
–
–
13
40
–
2.2
–
–
3
–
–
11
60
–
15
140
–
43
140
–
22
60
Static
On-State Drain Current(2)
ID(on)
Drain-Source On-State Resistance(2)
RDS(on)
Forward Transconductance(2)
gfs
µA
A
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
VDS = 10V, VGS = 4.5V
ID = 6A
VDD = 10V, RL = 10Ω
ID ≈ 1A, VGEN = 4.5V
RG = 6Ω
tf
nC
ns
Input Capacitance
Ciss
VGS = 0V
–
1240
–
Output Capacitance
Coss
VDS = 10V
–
200
–
Reverse Transfer Capacitance
Crss
f = 1.0MHZ
–
120
–
VSD
IS = 1.7A, VGS = 0V
–
0.7
1.3
V
trr
IF = 1.7A, di/dt = 100A/µs
–
–
100
ns
pF
Source-Drain Diode
Diode Forward Voltage(2)
Source-Drain Reverse Recovery Time
Notes:
(1) Surface mounted on FR4 board, t ≤ 10 sec.
(2) Pulse test; pulse width ≤ 300 µs,
duty cycle ≤ 2%
ton
VDD
td(on)
RL
VIN
toff
tr
td(off)
tf
90 %
90%
VOUT
D
Output, VOUT
10%
10%
VGS
INVERTED
RGEN
DUT
90%
G
50%
Input, VIN
50%
10%
S
Switching
Test Circuit
Switching
Waveforms
PULSE WIDTH
GF9926D
N-Channel Enhancement-Mode MOSFET Die
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
4.5V
3.5V
20
VGS = 2.5V
VDS = 10V
3.0V
2.0V
16
16
ID -- Drain Current (A)
ID -- Drain Source Current (A)
20
12
8
1.5V
4
TJ = 125°C
--55°C
25°C
0
0
0.5
1
1.5
2
2.5
3.0
3.5
0
0.5
1
1.5
2
2.5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
Fig. 4 – On-Resistance
vs. Drain Current
1
3
0.04
ID = 250µA
0.9
RDS(ON) -- On-Resistance (Ω)
VGS(th) -- Gate-to-Source Threshold Voltage (V)
8
4
0
0.8
0.7
0.6
0.5
0.4
0.3
0.035
VGS = 2.5V
0.03
0.025
4.5V
0.02
0.015
0.01
0.2
--50
--25
0
25
50
75
100
125
0
150
4
8
12
16
TJ -- Junction Temperature (°C)
ID -- Drain Current (A)
Fig. 5 – On-Resistance
vs. Junction Temperature
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
1.6
ID = 6A
1.4
1.2
1
0.8
0.06
0.04
TJ = 125°C
0.02
25°C
0
0.6
--50
20
0.08
VGS = 4.5V
ID = 6A
RDS(ON) -- On-Resistance (Ω)
RDS(ON) -- On-Resistance (Normalized)
12
--25
0
25
50
75
100
TJ -- Junction Temperature (°C)
125
150
1
2
3
4
VGS -- Gate-to-Source Voltage (V)
5
GF9926D
N-Channel Enhancement-Mode MOSFET Die
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 7 – Gate Charge
Fig. 8 – Capacitance
1800
f = 1MHZ
VGS = 0V
VDS = 10V
ID = 6A
1500
4
C -- Capacitance (pF)
VGS -- Gate-to-Source Voltage (V)
5
3
2
1
Ciss
1200
900
600
Coss
300
0
0
0
2
4
6
8
10
12
14
16
Crss
0
12
16
20
Fig. 9 – Source-Drain Diode
Forward Voltage
Fig. 10 – Breakdown Voltage vs.
Junction Temperature
31
VGS = 0V
ID = 250µA
BVDSS -- Drain-to-Source
Breakdown Voltage (V)
IS -- Source Current (A)
8
VDS -- Drain-to-Source Voltage (V)
100
10
TJ = 125°C
1
25°C
--55°C
0.1
0.01
4
Qg -- Total Gate Charge (nC)
0
0.2
0.4
0.6
0.8
1
VSD -- Source-to-Drain Voltage (V)
1.2
1.4
30
29
28
27
--50
--25
0
25
50
75
100
TJ -- Junction Temperature (°C)
125
150