NTD3055L104 Advance Information Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES 60 VOLTS RDS(on) = 104 mΩ Features • • • • • Lower RDS(on) Lower VDS(on) Tighter VSD Specification Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge N–Channel D Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 10 MΩ) Gate–to–Source Voltage – Continuous – Non–Repetitive (tp10 ms) Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc) Thermal Resistance – Junction–to–Case – Junction–to–Ambient (Note 1.) – Junction–to–Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol Value Unit VDSS VDGR 60 Vdc 60 Vdc VGS VGS 15 20 ID ID IDM PD 12 10 45 Adc 48 0.32 2.1 1.5 W W/°C W W TJ, Tstg –55 to +175 °C EAS 61 mJ 1 CASE 369A DPAK (Bent Lead) STYLE 2 NTD3055L104 Y WW RθJC RθJA RθJA 3.13 71.4 100 °C/W TL 260 °C 1 2 3 CASE 369 DPAK (Straight Lead) STYLE 2 = Device Code = Year = Work Week MARKING DIAGRAMS & PIN ASSIGNMENTS Apk This document contains information on a new product. Specifications and information herein are subject to change without notice. March, 2001 – Rev. 1 1 2 3 Vdc 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). Semiconductor Components Industries, LLC, 2001 4 S 4 Drain 4 Drain YWW NTD 3055L104 YWW NTD 3055L104 1 Gate 2 Drain 3 Source 1 Gate 3 Source 2 Drain ORDERING INFORMATION Device NTD3055L104 Package Shipping DPAK 75 Units/Rail DPAK NTD3055L104–1 Straight Lead NTD3055L104T4 DPAK 75 Units/Rail 2500 Tape & Reel Publication Order Number: NTD3055L104/D NTD3055L104 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 – 70 62.9 – – – – – – 1.0 10 – – ±100 1.0 – 1.6 4.2 2.0 – – 89 104 – – 0.98 0.86 1.50 – gFS – 9.1 – mhos Ciss – 316 440 pF Coss – 105 150 Crss – 35 70 td(on) – 9.2 20 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 3.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate–Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (Note 3.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 3.) (VGS = 5.0 Vdc, ID = 6.0 Adc) RDS(on) Static Drain–to–Source On–Voltage (Note 3.) (VGS = 5.0 Vdc, ID = 12 Adc) (VGS = 5.0 Vdc, ID = 6.0 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 3.) (VDS = 8.0 Vdc, ID = 6.0 Adc) Vdc mV/°C mOhm Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn–On Delay Time Rise Time (VDD = 30 Vdc, ID = 12 Adc, VGS = 5.0 Vdc, RG = 9.1 Ω) (Note 3.) Turn–Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 12 Adc, Ad VGS = 5.0 Vdc) (Note 3.) ns tr – 104 210 td(off) – 19 40 tf – 40.5 80 QT – 7.4 20 Q1 – 2.0 – Q2 – 4.0 – VSD – – 0.95 0.82 1.2 – Vdc trr – 35 – ns ta – 21 – tb – 14 – QRR – 0.04 – nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 12 Adc, VGS = 0 Vdc) (Note 3.) (IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 12 Adc, Ad VGS = 0 Vdc, Vd dIS/dt = 100 A/µs) (Note 3.) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 µC NTD3055L104 PACKAGE DIMENSIONS DPAK CASE 369A–13 ISSUE AA C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE –T– E R 4 Z A S 1 2 3 U K F J L H D 2 PL 0.13 (0.005) G M T DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- GATE DRAIN SOURCE DRAIN DPAK CASE 369–07 ISSUE M C B V E R 4 A 1 2 3 S –T– SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 2: PIN 1. 2. 3. 4. T http://onsemi.com 3 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 NTD3055L104 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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