NTQS6463 Product Preview Power MOSFET 6.2 Amps, 20 Volts P–Channel TSSOP–8 Features • • • • • • • http://onsemi.com New Low Profile TSSOP–8 Package Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperatures 6.2 AMPERES 20 VOLTS RDS(on) = 20 mΩ P–Channel Applications • Power Management in Portable and Battery–Powered Products, i.e.: • • D Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones Lithium Ion Battery Applications Note Book PC G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage Continuous Drain Current – TJ = 150°C (Note 1.) – TA = 25°C – TA = 70°C Pulsed Drain Current (10 µs Pulse Width) Symbol 10 secs VDS VGS ID Steady State –20 Maximum Power Dissipation (Note 1.) – TA = 25°C – TA = 70°C PD 8 TSSOP–8 CASE 948S PLASTIC Adc 6.2 4.9 –1.35 Apk –0.95 Y WW X Adc 1.05 0.67 Operating Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ= 25°C (VDD = 50 V, IL = 16.3 Apk, L = 10 mH) EAS 1.38 J = Year = Work Week = MOSFET PIN ASSIGNMENT W 1.5 1.0 463 YWW X 1 30 IDM IS MARKING DIAGRAM Vdc dc 12 7.4 5.9 Continuous Source Current (Diode Conduction) (Note 1.) Unit 1 D S S 2 3 G 4 8 7 6 5 D S S D Top View ORDERING INFORMATION 1. Surface mounted to 1″ x 1″ FR–4 board. Device Package Shipping NTQS6463 TSSOP–8 100 Units/Rail NTQS6463R2 TSSOP–8 3000/Tape & Reel This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 0 1 Publication Order Number: NTQS6463/D NTQS6463 THERMAL RESISTANCE RATINGS Rating Symbol Maximum Junction–to–Ambient (Note 2.) t ≤ 10 sec Steady State RθJA Maximum Junction–to–Foot Steady State RθJF Typical Max 65 100 83 120 43 52 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit –0.45 –0.9 – – – ±100 nAdc – – – – –1.0 –10 µΑdc 20 – – – – 0.018 0.025 0.020 0.027 STATIC Gate Threshold Voltage (VDS = VGS, ID = –250 µA) VGS(th) Gate–Body Leakage (VGS = 0 Vdc, VGS = ±8 Vdc) IGSS Zero Gate Threshold Voltage Drain Current (VDS = –16 Vdc, VGS = 0 Vdc) (VDS = –16 Vdc, VGS = 0 Vdc, TJ = 70C) IDSS On–State Drain Current (Note 3.) (VDS = –5.0 Vdc, VGS = –4.5 Vdc) ID(on) Drain–Source On–State Resistance (Note 3.) (VGS = –4.5 Vdc, ID = –7.4 Adc) (VGS = –2.5 Vdc, ID = –6.3 Adc) Vdc Adc Ω RDS(on) Forward Transconductance (VDS = –15 Vdc, ID = –7.4 Adc) (Note 3.) gFS – 21 – S Diode Forward Voltage (IS = –1.3 Adc, VGS = 0 Vdc) (Note 3.) VSD – –0.71 –1.1 Vdc nC DYNAMIC (Note 4.) Total Gate Charge Gate–Source Charge Gate–Drain Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Source–Drain Reverse Recovery Time (VDS = –10 Vdc, VGS = –5.0 Vdc, ID = –7.4 7 4 Adc) Ad ) (VDD = –10 10 Vdc, Vdc RL = 15 Ω, Ω 1.0 Adc, ID ≅ –1.0 VGEN = –4.5 Vdc, RG = 6 6.0 0 Ω) (IF = –1.3 Adc, di/dt = 100 A/µs) 2. Surface mounted to 1″ x 1″ FR–4 board. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. http://onsemi.com 2 Qg – 28 50 Qgs – 4.0 – Qgd – 9.0 – td(on) – 19 50 tr – 20 50 td(off) – 95 120 tf – 65 100 trr – 45 80 ns ns NTQS6463 PACKAGE DIMENSIONS TSSOP–8 CASE 948S–01 ISSUE O 8x 0.20 (0.008) T U K REF 0.10 (0.004) S 2X L/2 8 B –U– 1 V S J J1 4 PIN 1 IDENT S T U 5 L 0.20 (0.008) T U M ÇÇÇ ÉÉÉÉ ÉÉÉÉ ÇÇÇ K1 K A –V– SECTION N–N –W– C 0.076 (0.003) –T– SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S D DETAIL E G P 0.25 (0.010) N M N P1 F DETAIL E http://onsemi.com 3 DIM A B C D F G J J1 K K1 L M P P1 MILLIMETERS MIN MAX 2.90 3.10 4.30 4.50 --1.10 0.05 0.15 0.50 0.70 0.65 BSC 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0 8 --2.20 --3.20 INCHES MIN MAX 0.114 0.122 0.169 0.177 --0.043 0.002 0.006 0.020 0.028 0.026 BSC 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0 8 --0.087 --0.126 NTQS6463 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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