ETC NTQS6463/D

NTQS6463
Product Preview
Power MOSFET
6.2 Amps, 20 Volts
P–Channel TSSOP–8
Features
•
•
•
•
•
•
•
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New Low Profile TSSOP–8 Package
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperatures
6.2 AMPERES
20 VOLTS
RDS(on) = 20 mΩ
P–Channel
Applications
• Power Management in Portable and Battery–Powered Products, i.e.:
•
•
D
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Lithium Ion Battery Applications
Note Book PC
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage
Continuous Drain Current
– TJ = 150°C (Note 1.)
– TA = 25°C
– TA = 70°C
Pulsed Drain Current (10 µs
Pulse Width)
Symbol
10
secs
VDS
VGS
ID
Steady
State
–20
Maximum Power Dissipation
(Note 1.)
– TA = 25°C
– TA = 70°C
PD
8
TSSOP–8
CASE 948S
PLASTIC
Adc
6.2
4.9
–1.35
Apk
–0.95
Y
WW
X
Adc
1.05
0.67
Operating Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
Single Pulse Drain–to–Source
Avalanche Energy – Starting
TJ= 25°C
(VDD = 50 V, IL = 16.3 Apk,
L = 10 mH)
EAS
1.38
J
= Year
= Work Week
= MOSFET
PIN ASSIGNMENT
W
1.5
1.0
463
YWW
X
1
30
IDM
IS
MARKING
DIAGRAM
Vdc
dc
12
7.4
5.9
Continuous Source Current
(Diode Conduction) (Note 1.)
Unit
1
D
S
S
2
3
G
4
8
7
6
5
D
S
S
D
Top View
ORDERING INFORMATION
1. Surface mounted to 1″ x 1″ FR–4 board.
Device
Package
Shipping
NTQS6463
TSSOP–8
100 Units/Rail
NTQS6463R2
TSSOP–8
3000/Tape & Reel
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
Publication Order Number:
NTQS6463/D
NTQS6463
THERMAL RESISTANCE RATINGS
Rating
Symbol
Maximum Junction–to–Ambient (Note 2.)
t ≤ 10 sec
Steady State
RθJA
Maximum Junction–to–Foot
Steady State
RθJF
Typical
Max
65
100
83
120
43
52
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
–0.45
–0.9
–
–
–
±100
nAdc
–
–
–
–
–1.0
–10
µΑdc
20
–
–
–
–
0.018
0.025
0.020
0.027
STATIC
Gate Threshold Voltage
(VDS = VGS, ID = –250 µA)
VGS(th)
Gate–Body Leakage (VGS = 0 Vdc, VGS = ±8 Vdc)
IGSS
Zero Gate Threshold Voltage Drain Current
(VDS = –16 Vdc, VGS = 0 Vdc)
(VDS = –16 Vdc, VGS = 0 Vdc, TJ = 70C)
IDSS
On–State Drain Current (Note 3.)
(VDS = –5.0 Vdc, VGS = –4.5 Vdc)
ID(on)
Drain–Source On–State Resistance (Note 3.)
(VGS = –4.5 Vdc, ID = –7.4 Adc)
(VGS = –2.5 Vdc, ID = –6.3 Adc)
Vdc
Adc
Ω
RDS(on)
Forward Transconductance (VDS = –15 Vdc, ID = –7.4 Adc) (Note 3.)
gFS
–
21
–
S
Diode Forward Voltage (IS = –1.3 Adc, VGS = 0 Vdc) (Note 3.)
VSD
–
–0.71
–1.1
Vdc
nC
DYNAMIC (Note 4.)
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Source–Drain Reverse
Recovery Time
(VDS = –10 Vdc,
VGS = –5.0 Vdc,
ID = –7.4
7 4 Adc)
Ad )
(VDD = –10
10 Vdc,
Vdc RL = 15 Ω,
Ω
1.0 Adc,
ID ≅ –1.0
VGEN = –4.5 Vdc,
RG = 6
6.0
0 Ω)
(IF = –1.3 Adc,
di/dt = 100 A/µs)
2. Surface mounted to 1″ x 1″ FR–4 board.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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2
Qg
–
28
50
Qgs
–
4.0
–
Qgd
–
9.0
–
td(on)
–
19
50
tr
–
20
50
td(off)
–
95
120
tf
–
65
100
trr
–
45
80
ns
ns
NTQS6463
PACKAGE DIMENSIONS
TSSOP–8
CASE 948S–01
ISSUE O
8x
0.20 (0.008) T U
K REF
0.10 (0.004)
S
2X
L/2
8
B
–U–
1
V
S
J J1
4
PIN 1
IDENT
S
T U
5
L
0.20 (0.008) T U
M
ÇÇÇ
ÉÉÉÉ
ÉÉÉÉ
ÇÇÇ
K1
K
A
–V–
SECTION N–N
–W–
C
0.076 (0.003)
–T–
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
S
D
DETAIL E
G
P
0.25 (0.010)
N
M
N
P1
F
DETAIL E
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3
DIM
A
B
C
D
F
G
J
J1
K
K1
L
M
P
P1
MILLIMETERS
MIN
MAX
2.90
3.10
4.30
4.50
--1.10
0.05
0.15
0.50
0.70
0.65 BSC
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0
8
--2.20
--3.20
INCHES
MIN
MAX
0.114
0.122
0.169
0.177
--0.043
0.002
0.006
0.020
0.028
0.026 BSC
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0
8
--0.087
--0.126
NTQS6463
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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For additional information, please contact your local
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4
NTQS6463/D