ETC NTD4N60/D

NTD4N60
Preferred Device
Advance Information
Power MOSFET
4 Amps, 600 Volts
N–Channel DPAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
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Features
•
•
•
•
•
•
•
4 AMPERES
600 VOLTS
RDS(on) = 2400 mΩ
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Industry Standard DPAK Surface Mount Package
N–Channel
D
Typical Applications
•
•
•
•
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
G
S
MARKING
DIAGRAMS
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp10 ms)
Drain – Continuous
– Continuous @ 100°C
– Single Pulse (tp10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C
Symbol
Value
Unit
VDSS
VDGR
600
Vdc
600
Vdc
Vdc
VGS
VGSM
ID
ID
IDM
PD
20
40
4.0
3.0
14
Adc
96
0.77
1.75
Watts
W/°C
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
150
°C
Single Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 V, VGS = 10 Vdc,
IL = 4 A, L = 10 mH, RG = 25 Ω)
EAS
80
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
4
1 2
3
Y
WW
T
YWW
T
4N60
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
PIN ASSIGNMENT
Drain
Gate
Drain
Source
°C/W
RθJC
RθJA
RθJA
TL
1.30
100
71.4
ORDERING INFORMATION
°C
260
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Device
Package
Shipping
NTD4N60
DPAK
75 Units/Rail
NTD4N60–1
DPAK
75 Units/Rail
NTD4N60T4
DPAK
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
NTD4N60/D
NTD4N60
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
–
–
700
–
–
–
–
–
–
10
100
–
–
–
–
100
100
2.0
–
2.7
6.0
4.0
–
mV/°C
–
2100
2400
mOhm
–
–
–
–
11.5
10.5
gFS
0.7
3.8
–
mhos
Ciss
–
540
760
pF
Coss
–
125
180
Crss
–
8.0
20
td(on)
–
12
20
tr
–
7.0
10
td(off)
–
19
40
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Collector Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ =125°C)
Vdc
µAdc
IDSS
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS(f)
IGSS(r)
mV/°C
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
ID = 0.25 mA, VDS = VGS
Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 2 Adc)
RDS(on)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 4 Adc)
(VGS = 10 Vdc, ID = 2 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 2 Adc)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vd
Vdc, VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 300 Vdc, ID = 4 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 Ω)
Fall Time
Gate Charge
(VDS = 480 Vdc, ID = 4 Adc,
VGS = 10 Vdc)
tf
–
10
20
QT
–
5.0
10
Q1
–
2.7
–
Q2
–
2.0
–
Q3
–
6.0
–
–
–
0.86
0.75
1.0
–
trr
–
655
–
ta
–
103
–
tb
–
552
–
QRR
–
1.9
–
ns
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
VSD
(IS = 4 Adc, VGS = 0 Vdc)
(IS = 4 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 4 Adc
Adc, VGS = 0 Vdc,
Vdc
diS/dt = 100 A/µs)
Reverse Recovery Stored
Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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2
Vdc
ns
µC
NTD4N60
PACKAGE DIMENSIONS
DPAK
CASE 369A–13
ISSUE AA
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
E
R
4
Z
A
S
1
2
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
--0.030
0.050
0.138
---
STYLE 2:
PIN 1.
2.
3.
4.
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3
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
--0.77
1.27
3.51
---
NTD4N60
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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4
NTD4N60/D