STTB1206D(I) TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr (typ) 50ns VF (max) 1.3V K A IF(AV) FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: Snubbing or clamping, demagnetization and rectification. ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES AND PARTICULARY LOW FORWARD VOLTAGE. DESIGNED FOR HIGH PULSED CURRENT OPERATIONS. CECC APPROVED. A A K K TO220AC (Plastic) Isolated TO220AC (Plastic) STTB1206D STTB1206DI DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH, B family, drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. They are particularly suitable in the primary circuit of an SMPS as snubber, clamping or demagnetizing diodes, and also in most power converters as high performance rectifier diodes. Packaged in TO220AC and in isolated TO220AC, these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V VRSM Non repetitive peak reverse voltage 600 V IF(RMS) RMS forward current STTB1206D STTB1206DI 30 20 A Repetitive peak forward current (tp = 5 µs, f = 1kHz) STTB1206D STTB1206DI 420 280 A Max operating junction temperature -65 to 150 °C Storage temperature -65 to 150 °C IFRM Tj Tstg TM : TURBOSWITCH is a trademark of SGS-THOMSON MICROELECTRONICS. May 1995 - Ed : 2B 1/8 STTB1206D(I) THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Conditions Unit Junction to case thermal resistance STTB1206D STTB1206DI 1.9 3.0 °C/W Conduction power dissipation (see fig. 5) IF(AV) = 12A δ =0.5 STTB1206D Tc= 114°C STTB1206DI Tc= 93°C 19 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) STTB1206D Tc= 104°C STTB1206DI Tc= 78°C 24 W STATIC ELECTRICAL CHARACTERISTICS Symbol Value (see Fig.5) Parameter Test Conditions Min Typ Max Unit VF * Forward voltage drop IF =12A Tj = 25°C Tj = 125°C 1.4 1.3 V V IR ** Reverse leakage current VR =0.8 x VRRM Tj = 25°C Tj = 125°C 100 2 µA mA Max Unit Test pulses widths : * tp = 380 µs, duty cycle < 2% ** tp = 5 ms , duty cycle < 2% DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING (see Fig.6) Symbol trr IRM S factor Parameter Reverse recovery time Test Conditions Min Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Maximum reverse recovery current Tj = 125°C VR = 400V dIF/dt = -96 A/µs dIF/dt = -500 A/µs IF =12A Softness factor Tj = 125°C VR = 400V dIF/dt = -500 A/µs IF =12A Typ ns 50 100 A 18 30 / 0.9 TURN-ON SWITCHING (see Fig.7) Symbol tfr VFp Parameter Test Conditions Min Typ Max Forward recovery time Tj = 25°C IF =12 A, dIF/dt = 96 A/µs measured at, 1.1 × VFmax 500 Peak forward voltage Tj = 25°C IF =12A, dIF/dt = 96 A/µs IF =60A, dIF/dt = 500 A/µs 8 2/8 Unit ns V 10 STTB1206D(I) APPLICATION DATA The TURBOSWITCH ”B” is especially designed to provide the lowest overall power losses in any application such as snubbing,clamping, demagne- tization and rectification. In such applications (fig.1 to fig.4), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4 Watts CONDUCTION LOSSES REVERSE LOSSES SWITCHING LOSSES P1 Watts (Fig. 5) P2 Watts (Fig. 5) OFF : P3 Watts ON : P4 Watts (Fig. 6 & 7) Fig. 1 : SNUBBER DIODE. Fig. 2 : CLAMPING DIODE. PWM PWM t t T F = 1/T T = t/T F = 1/T = t/T Fig. 4 : RECTIFIER DIODE. Fig. 3 : DEMAGNETIZING DIODE. 3/8 STTB1206D(I) APPLICATION DATA (Cont’d) Fig. 5: STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 . IF(AV) + Rd . IF2(RMS) IF with Rd Vt0 = 1.00 V Rd = 0.025 Ohm (Max values at 125°C) VR V IR VF V tO Reverse losses : P2 = VR . IR . (1 - δ) Fig. 6: TURN-OFF CHARACTERISTICS Turn-off losses : I dI F /dt FREEWHEELING OPERATION P3 = VR × IRM 2 × S × F 6 x dIF ⁄ dt ta tb V t dI R /dt IRM trr = ta + tb S = tb/ta VR Turn-off losses : (with non negligible serial inductance) I dIF /dt = VR /L RECTIFIER OPERATION P3’ = ta tb V t IRM dIR /dt VR VR × IRM 2 × S × F + 6 x dIF ⁄ dt L × IRM 2 × F 2 P3 and P3’ are suitable for power MOSFET and IGBT trr = ta + tb S = tb/ta Fig. 7: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F t VF V Fp VF 1.1V F 0 tfr t 4/8 STTB1206D(I) Fig 8 : Conduction losses versus average current Fig 9 : Switching OFF losses versus dIF/dt P3(W) P1(W) 7 20 T Tj=125 o C = 0. 2 =0.1 6 15 5 =t p/ T F=20kHz VR=400V IL=24A tp 4 =1 10 IL=12A 3 = 0. 5 IL=6A 2 5 1 IF(av)(A) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Fig 10 : Switching ON losses versus dIF/dt P4(W) Tj=125 oC F=100kHz I F=IF( AV) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 dIF/dt(A/ s) 0 25 50 dIF/dt(A/ s) 0 100 200 300 400 500 600 700 800 900 1000 Fig 11 : Forward voltage drop versus forward current 1.0 0.9 0 75 100 125 150 175 200 225 250 VFM(V) 2.50 2.25 MAXIMUM 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.1 VALUES Tj=125 oC IFM(A) 1 10 100 200 Fig 12 : Relative variation of thermal transient impedance junction to case versus pulse duration 5/8 STTB1206D(I) Fig 13 : Peak reverse recovery current versus dIF/dt Fig 14 : Reverse recovery time versus dIF/dt IRM(A) 55 o 50 90% CONFIDENCE Tj=125 C 45 VR=400V IF=24A 40 35 30 IF=12A 25 20 I F=6A 15 10 5 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 trr(ns) 650 90% CONFIDENCE Tj=125 oC 600 550 VR=400V 500 450 400 IF= 24A 350 300 250 200 I F=12A 150 100 IF=6A 50 dIF/dt(A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 Fig 15 : Softness factor (tb/ta) versus dIF/dt Fig 16 : Relative variation of dynamic parameters versus junction temperature (Reference Tj=125°C) S factor 2.00 Typical values Tj=125 oC 1.75 1.50 VR=400V IF= 24A 1.25 I F= 12A 1.00 0.75 0.50 I F= 6A 0.25 dIF/dt(A/ s) 0.00 0 100 200 300 400 500 600 700 800 900 1000 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 S factor IRM Tj(oC) 25 50 75 100 125 Fig 17 : Transient peak forward voltage versus dIF/dt Fig 18 : Forward recovery time versus dIF/dt VFP(V) 13 12 90% CONFIDENCE Tj=125oC 11 IF =IF (av) 10 9 8 7 6 5 4 3 2 1 dIF/dt( A/ s) 0 0 25 50 75 100 125 150 175 200 225 250 tfr(ns) 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 25 50 6/8 150 90% CONFIDENCE Tj=125oC IF =IF(av) dIF/dt(A/ s) 75 100 125 150 175 200 225 250 STTB1206D(I) PACKAGE DATA TO220AC (JEDEC outline) DIMENSIONS REF. Millimeters Inches H A G I J Min. Max. Min. Max. A 9.66 10.66 0.380 0.419 B C 15.2 13 15.9 14 0.598 0.511 0.626 0.551 D E 6.2 6.6•• 16.4 typ. 0.244 0.260 0.645 typ. L F G H 3.5 2.65 4.4 0.137 0.104 0.173 M I J K 3.75 3.85 1.23 1.32 1.27 typ. 0.147 0.151 0.048 0.051 0.050 typ. L M N 0.49 2.4 4.95 0.70 2.72 5.15 0.019 0.094 0.194 0.027 0.107 0.203 O P 1.14 0.61 1.70 0.88 0.044 0.024 0.067 0.034 D K B E F O P C N 4.2 2.95 4.6 0.165 0.116 0.181 Cooling method : C. Marking : Type number. Weight : 1.9 g. Torque value : 0.55 m.N typ (0.70 m.N max). PACKAGE DATA ISOLATED TO220AC (JEDEC outline) G I DIMENSIONS REF. Millimeters Inches H A J Min. Max. Min. Max. D B F L P 15° C M N A B 10.20 14.23 10.45 15.87 0.401 0.560 0.411 0.625 C D F 12.70 5.85 14.70 6.85 4.50 0.500 0.230 0.579 0.270 0.178 G H I 2.54 4.48 3.55 3.00 4.82 4.00 0.100 0.176 0.139 0.119 0.190 0.158 J L M 1.15 0.35 2.10 1.39 0.65 2.70 0.045 0.013 0.082 0.055 0.026 0.107 N P 4.58 0.64 5.58 0.96 0.18 0.025 0.22 0.038 Electrical isolation : 2500V DC Capacitance :7pF Cooling method : C. Marking : Type number. Weight : 2.2 g. Torque value : 0.8 m.N typ (1.0 m.N max). 7/8 STTB1206D(I) Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8/8