ETC UNR112X(UN112X)

Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
(UN1121/1122/1123/1124/112X/112Y)
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
(1.0)
(1.5)
2.4±0.2
(0.85)
●
●
●
●
●
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
3
(2.5)
2
1.25±0.05
(R1)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
0.45±0.05
0.55±0.1
■ Resistance by Part Number
●
4.1±0.2
2.0±0.2
R 0.7
4.5±0.1
R 0.9
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
●
(1.0)
(1.5)
3.5±0.1
(0.4)
6.9±0.1
■ Features
●
2.5±0.1
1
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–500
mA
Total power dissipation
PT
600
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
R1
C
B
R2
E
Note) The part numbers in the parenthesis show conventional part number.
1
Transistors with built-in Resistor
■ Electrical Characteristics
UNR1121/1122/1123/1124/112X/112Y
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Conditions
VCB = –50V, IE = 0
–1
VCB = –50V, IE = 0
– 0.1
ICEO
VCE = –50V, IB = 0
–1
UNR112X ICEO
VCE = –50V, IB = 0
– 0.5
IEBO
VEB = –6V, IC = 0
–2
VCBO
IC = –10µA, IE = 0
UNR1123/1124
UNR1121
hFE
UNR1123/1124
VCE = –10V, IC = –100mA
UNR112X
–50
V
50
60
IC = –100mA, IB = –5mA
– 0.25
UNR112X VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
UNR112Y VCE(sat)
IC = –50mA, IB = –5mA
VCE(sat)
VOH
VCC = –5V, VB = – 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = –5V, VB = –3.5V, RL = 500Ω
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
Output voltage high level
V
– 0.2
200
2.2
UNR1122
4.7
UNR1123
R1
(–30%)
UNR112X
10
UNR112Y
(+30%)
3.1
0.8
UNR112X
R1/R2
UNR112Y
Common characteristics chart
PT — Ta
800
600
400
200
0
120
160
Ambient temperature Ta (˚C)
1.0
0.22
0.054
0.67
V
MHz
0.27
UNR1124
V
– 0.15
–4.9
UNR1121
Resistance ratio
Total power dissipation PT (mW)
mA
20
Collector to emitter saturation voltage
2
µA
40
UNR1122/112Y
80
µA
–1
Collector to base voltage
40
Unit
–5
UNR1122/112X/112Y
Forward
current
transfer
ratio
max
ICBO
UNR1121
Emitter
cutoff
current
0
typ
UNR112X ICBO
Collector cutoff current
Input
resistance
min
1.2
kΩ
Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
Characteristics charts of UNR1121
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.0mA
–160
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–120
–0.4mA
–80
–0.3mA
–0.2mA
–40
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
Ta=75˚C
200
100
25˚C
0
–1
–100 –300 –1000
–3
6
4
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
8
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–30
–10000
f=1MHz
IE=0
Ta=25˚C
10
300
Collector current IC (mA)
Cob — VCB
12
VCE=–10V
–25˚C
–0.01
–1
–12
hFE — IC
400
Forward current transfer ratio hFE
–240
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
2
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1122
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–150
–0.6mA
–0.5mA
–100
–0.4mA
–0.3mA
–0.2mA
–50
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
160
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Ta=75˚C
VCE= –10V
Forward current transfer ratio hFE
–300
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
Cob — VCB
IO — VIN
–10000
20
16
12
8
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
24
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR1123
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–3
–30
–25˚C
100
50
0
–1
–100 –300 –1000
–3
16
12
8
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
150
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
4
–10
–10000
20
25˚C
Collector current IC (mA)
Cob — VCB
24
Ta=75˚C
VCE= –10V
–25˚C
–0.01
–1
–12
hFE — IC
200
Forward current transfer ratio hFE
–240
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
Characteristics charts of UNR1124
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–150
–0.5mA
–0.4mA
–100
–0.3mA
–0.2mA
–50
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
0
0
–2
–4
–6
–8
–10
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–1
–12
400
IC/IB=10
–30
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
–30
VCE= –10V
350
300
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–100 –300 –1000
–3
IO — VIN
–10000
16
12
8
–100 –300 –1000
VIN — IO
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Output current IO (µA)
20
–30
–100
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
24
Collector output capacitance Cob (pF)
hFE — IC
–100
Forward current transfer ratio hFE
–300
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR112X
IC — VCE
VCE(sat) — IC
–100
Collector current IC (mA)
–200
IB=–1.6mA
–160
–1.4mA
–1.2mA
–120
–1.0mA
–0.8mA
–80
–0.6mA
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
hFE — IC
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
240
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
Ta=25˚C
Collector to emitter saturation voltage VCE(sat) (V)
–240
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
5
Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
Cob — VCB
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
VO=–0.2V
Ta=25˚C
–30
Input voltage VIN (V)
Collector output capacitance Cob (pF)
24
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
–30
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
Collector to base voltage VCB (V)
Characteristics charts of UNR112Y
IC — VCE
VCE(sat) — IC
IB=–1.2mA
–160
–1.0mA
–0.8mA
–120
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
0
–3
Cob — VCB
–30
f=1MHz
IE=0
Ta=25˚C
16
12
8
VO=–0.2V
Ta=25˚C
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
VCE=–10V
–10
–30
Output current IO (mA)
200
160
Ta=75˚C
25˚C
120
–25˚C
80
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
–30
Input voltage VIN (V)
20
–100 –300 –1000
VIN — IO
–100
24
Collector output capacitance Cob (pF)
–10
Collector current IC (mA)
Collector to emitter voltage VCE (V)
240
Forward current transfer ratio hFE
Collector current IC (mA)
–200
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
6
hFE — IC
–100
–240
–100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL