Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 ■ Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1.0 4.5±0.1 0.45±0.05 2 1 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Symbol Collector cutoff current 0. 7 3 Symbol Parameter 0.55±0.1 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● 1.25±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 120 MHz 80 mV Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 2000 0.2 V Rank classification Rank R hFE 400 ~ 800 S T 600 ~ 1200 1000 ~ 2000 1 Transistor 2SD1199 PC — Ta IC — VCE 120 200 100 120 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 20 Collector current IC (mA) 300 60 80 100 120 140 160 2 4 6 8 10 12 1800 Forward current transfer ratio hFE 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 10 30 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 100 Collector current IC (mA) 0.3 Cob — VCB 1 3 IE=0 f=1MHz Ta=25˚C Noise voltage NV (mV) 5 4 3 2 80 10 30 150 100 50 0 – 0.1 – 0.3 100 –1 –3 1 3 10 30 100 Collector to base voltage VCB (V) –100 NV — VCE Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 0.03 –30 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 –10 Emitter current IE (mA) 1 0 2.0 200 NV — IC 100 6 1.6 VCB=10V Ta=25˚C Collector current IC (mA) 8 7 1.2 250 Noise voltage NV (mV) 3 0.8 VCE=10V 1200 3 1 0.4 Base to emitter voltage VBE (V) fT — I E 1500 10 0.3 0 hFE — IC 30 0.01 0.1 40 Collector to emitter voltage VCE (V) IC/IB=10 0.1 60 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 80 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 400 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 500 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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