Composite Transistors XN05553 (XN5553) Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency +0.2 2.8 –0.3 +0.25 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 100 V VEBO 15 V IC 20 mA Peak collector current ICP 50 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature +0.1 +0.1 0 to 0.05 0.1 to 0.3 ■ Absolute Maximum Ratings 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) Parameter Collector to base voltage 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 4U Internal Connection 6 Tr1 1 2 5 4 ■ Electrical Characteristics 1.45±0.1 +0.1 0.95 4 0.16–0.06 2SD1149 × 2 elements 2 0.95 +0.2 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 5 0.8 2.9 –0.05 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 ● 0.65±0.15 1 6 0.5 –0.05 ■ Features 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 100 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V ICBO VCB = 60V, IE = 0 0.1 µA ICEO VCE = 60V, IB = 0 1.0 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Noise voltage NV VCE = 10V, IC = 1mA, GV = 80dB Rg = 100KΩ, Function = FLAT 80 mV Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector cutoff current 400 2000 0.05 0.2 V Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN05553 PT — Ta IC — VCE 500 IC — VBE 80 60 VCE=10V 200 100 60 IB=100µA 80µA 60µA 50µA 40µA 40 30µA 20µA 20 10µA 120 160 0 2 Ambient temperature Ta (˚C) 4 3 1 0.3 25˚C Ta=75˚C –25˚C 0.03 1 3 10 30 1200 25˚C –25˚C 900 600 300 0.3 100 Noise voltage NV (mV) 2 1 0 2 3 5 10 1 3 20 30 50 Collector to base voltage VCB 100 (V) 80 10 30 80 40 –1 –3 –10 –30 –100 Emitter current IE (mA) NV — VCE 100 Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 0.03 2.0 120 0 –0.1 –0.3 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 1.6 160 NV — IC 3 1.2 VCB=10V Ta=25˚C Collector current IC (mA) 4 0.8 fT — IE Ta=75˚C 0 0.1 100 f=1MHz IE=0 Ta=25˚C 1 0.4 Base to emitter voltage VBE (V) 1500 Cob — VCB 5 0 200 Collector current IC (mA) 6 0 12 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.3 20 hFE — IC 30 0.01 0.1 10 1800 IC/IB=10 0.1 8 –25˚C 30 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 6 Transition frequency fT (MHz) 80 Noise voltage NV (mV) 40 Ta=75˚C 40 10 0 0 Collector output capacitance Cob (pF) Collector current IC (mA) 300 0 2 25˚C 50 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 0.1 0.3 Collector current IC (mA) 1 1 2 3 5 10 20 30 50 Collector to emitter voltage VCE (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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