2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548C (Z) 4th. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK–2 4 4 D 1 2 G 1 2 S 3 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –10 A –40 A –10 A 20 W Drain peak current I D(pulse) Body to drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –30 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –10 µA VDS = –30 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state RDS(on) — 65 85 mΩ I D = –5A, VGS = –10VNote3 resistance RDS(on) — 110 180 mΩ I D = –5A, VGS = –4V Note3 Forward transfer admittance |yfs| 10 16 — S I D = –5A, VDS = –10V Note3 Input capacitance Ciss — 660 — pF VDS = –10V Output capacitance Coss — 440 — pF VGS = 0 Reverse transfer capacitance Crss — 140 — pF f = 1MHz Turn-on delay time t d(on) — 12 — ns I D = –5A, RL = 2Ω Rise time tr — 65 — ns VGS = –10V Turn-off delay time t d(off) — 85 — ns Fall time tf — 65 — ns Body to drain diode forward voltage VDF — –1.05 — V I F = –10A, VGS = 0 Body to drain diode reverse recovery time t rr — 65 — ns I F = –10A, VGS = 0 diF/ dt = 50A/µs Note: 3. Pulse test 3 2SJ506(L), 2SJ506(S) Main Characteristics Power vs. Temperature Derating 20 10 –100 –50 –10 –5 Maximum Safe Operation Area Ta = 25 °C 10 –20 –2 –1 –0.5 PW DC 0 1 m µs s =1 0m s( 1s er ho (T atio t) n c= 25 °C ) Op Operation in this area is limited by R DS(on) 50 100 150 200 –0.1 –0.2 Typical Output Characteristics –10 V –8 V –20 –4.5 V Pulse Test –5 V –6 V –16 –4 V (A) –12 ID –8 –3 V –4 0 –4 –8 –12 Drain to Source Voltage –16 –20 V DS (V) –2 –5 –10 –20 Drain to Source Voltage Tc (°C) –3.5 V –0.5 –1 –50 V DS (V) Typical Transfer Characteristics –20 –16 V DS = –10 V Pulse Test 25 °C –12 –8 –4 75 °C VGS = –2.5 V 4 µs 10 –0.2 –0.1 Case Temperature I D (A) I D (A) 30 Drain Current –200 0 Drain Current –500 Drain Current Channel Dissipation Pch (W) 40 Tc = –25 °C 0 –1 –2 –3 Gate to Source Voltage –4 V GS (V) –5 2SJ506(L), 2SJ506(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.6 –1.2 –0.8 I D = –10 A –0.4 –5 A –2 A 0 –4 –8 –12 Gate to Source Voltage Static Drain to Source on State Resistance R DS(on) ( Ω) Drain to Source On State Resistance R DS(on) ( Ω ) Pulse Test –16 –10 A 80 –2,–5 A V GS = –10 V 0 40 80 Case Temperature 120 Tc (°C) VGS = –4 V –10 V 50 20 Pulse Test 10 –1 –2 –5 –10 Drain Current –2 A 120 0 –40 100 –20 I D = –10 A V GS = –4 V 40 200 V GS (V) Static Drain to Source on State Resistance vs. Temperature 200 –5 A Pulse Test 160 500 160 100 Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) –2 Static Drain to Source on State Resistance vs. Drain Current 1000 –50 –100 –20 I D (A) Forward Transfer Admittance vs. Drain Current 50 20 10 Tc = –25 °C 25 °C 5 2 75 °C V DS = –10 V Pulse Test 1 0.5 –0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 Drain Current I D (A) 5 2SJ506(L), 2SJ506(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 50 20 1000 –0.5 –1 –2 Reverse Drain Current Coss 200 50 20 10 0 V DD = –25 V –10 V –5 V –30 –4 –8 –12 V GS –40 –16 I = –10 A –50 D 0 8 16 Gate Charge 32 24 Qg (nc) –20 40 V GS (V) V DS 1000 500 Switching Time t (ns) –20 –20 –30 –40 –50 Switching Characteristics 0 Gate to Source Voltage V DS (V) Drain to Source Voltage –10 –10 Drain to Source Voltage V DS (V) I DR (A) Dynamic Input Characteristics VDD = –5 V –10 V –25 V Crss 100 –5 –10 –20 0 Ciss 500 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 10 –0.1 –0.2 6 VGS = 0 f = 1 MHz 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 V GS = –10 V, V DD = –10 V PW = 10 µs, duty < =1% 200 t d(off) 100 50 tf tr 20 t d(on) 10 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 2SJ506(L), 2SJ506(S) Reverse Drain Current vs. Source to Drain Voltage –20 Reverse Drain Current I DR (A) Pulse Test –5 V –16 –10 V –12 V GS = 0.5 V –8 –4 0 –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 –2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.2 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 6.25 °C/W, Tc = 25 °C 0.02 e uls 1 0.0 PDM P ot D= h 1s PW T PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (S) 7 2SJ506(L), 2SJ506(S) Switching Time Test Circuit Waveforms Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% Vin 50Ω –10 V V DD = –10 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ506(L), 2SJ506(S) Package Dimensions As of January, 2001 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) — — 0.42 g 9 2SJ506(L), 2SJ506(S) As of January, 2001 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) — Conforms 0.28 g 2SJ506(L), 2SJ506(S) As of January, 2001 (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) (5.1) (0.1) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.5 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) — Conforms 0.28 g 11 2SJ506(L), 2SJ506(S) Cautions 1. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12