ETC BB201M

BB201M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-713A (Z)
2nd. Edition
Dec. 1, 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “AV–”.
2. BB201M is individual type number of HITACHI BBFET.
BB201M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate1 to source voltage
VG1S
+6
–0
V
Gate 2 to source voltage
VG2S
±6
V
Drain current
ID
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
6
—
—
V
I D = 200µA, VG1S = VG2S = 0
Gate1 to source breakdown voltage V(BR)G1SS
+6
—
—
V
I G1 = +10µA, VG2S = VDS = 0
Gate2 to source breakdown voltage V(BR)G2SS
±6
—
—
V
I G2 = ±10µA, VG1S = VDS = 0
Gate1 to cutoff current
I G1SS
—
—
+100
nA
VG1S = +5V, V G2S = VDS = 0
Gate2 to cutoff current
I G2SS
—
—
±100
nA
VG2S = ±5V, VG1S = VDS = 0
Gate1 to source cutoff voltage
VG1S(off)
0.2
0.45
0.8
V
VDS = 5V, VG2S = 4V
I D = 100µA
Gate2 to source cutoff voltage
VG2S(off)
0.4
0.7
1.0
V
VDS = 5V, VG1S = 5V
I D = 100µA
Drain current
I D(op)
10
15
20
mA
VDS = 5V, VG1 = 5V, VG2S = 4V
RG = 220kΩ
Forward transfer admittance
|yfs|
16
22
—
mS
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 220kΩ, f = 1kHz
Input capacitance
c iss
1.2
1.7
2.2
pF
VDS = 5V, VG1 = 5V
Output capacitance
c oss
0.7
1.1
1.5
pF
VG2S =4V, RG = 220kΩ
Reverse capacitance
c rss
—
0.012
0.03
pF
f = 1MHz
Power gain
PG
16
20
—
dB
VDS = 5V, VG1 = 5V, VG2S =4V
Noise figure
NF
—
2.0
3.0
dB
RG = 220kΩ, f = 900MHz
2
BB201M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG1
VG2
RG
Gate 2
Gate 1
Source
Drain
A
ID
Application Circuit
V DS = 5 V
VAGC = 4 to 0.3 V
BBFET
RFC
Output
Input
RG
V GG = 5 V
3
BB201M
900MHz
Power Gain,
Noise Test Circuit
VD
V G1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
D
G2
Output
L3
L4
G1
Input
S
L1
L2
C1
C1, C2F
C3 F
C4‘C6 F
R1 F
R2 F
R3 F
C2
Variable Capacitori10pF MAX)
Disk Capacitori1000pF)
Air Capacitori1000pF)
220 k¶
47 k¶
4.7 k¶
L2F
L1F
10
3
3
8
10
26
i1mm Copper wirej
UnitFmm
21
L4F
L3F
18
10
10
7
7
29
RFCF1mm Copper wire with enamel 4turns inside d
4
i
BB201M
Power vs. Temperature Derating
25
100
50
0
50
100
150
Ambient Temperature
20
15
10
5
Ta (°C)
DC Current vs.
Gate2 to Source Voltage
15
0 kΩ
10
RG
= 33
5
1
2
3
Gate2 to Source Voltage
4
5
VG2S (V)
I D (mA)
kΩ
150 k Ω
180
kΩ
220
kΩ
270
20
Drain Current
I D (mA)
RG
1
2
3
Drain to Source Voltage
4
5
V DS (V)
20
V DS = 5 V
R G = 150 k Ω
V DD = V GG = 5 V
Drain Current
Ω
k
0 kΩ
2
1 50
1 kΩ
0
18 k Ω
0
2
2 kΩ
0
7
2 kΩ
330 k Ω
390
0 kΩ
= 47
DC Current vs.
Gate1 to Source Voltage
25
0
kΩ
V G2S = 4 V
0
200
Typical Output Characteristics
10
0
I D (mA)
150
Drain Current
Channel Dissipation
Pch (mW)
200
16
4
V
3
12
V
2V
8
4
0
V G2S = 1 V
1
2
3
Gate1 to Source Voltage
4
5
VG1S (V)
5
BB201M
DC Current vs.
Gate1 to Source Voltege
DC Current vs.
Gate1 to Source Voltege
Forward Transfer Admittance |y fs | (mS)
2V
8
4
0
1
2
3
Gate1 to Source Voltage
V DS = 5 V
R G = 150 k Ω
20 f = 1 kHz
4V
3V
2V
10
5
V G2S = 1 V
1
2
3
Gate1 to Source Voltage
4
5
V G1S (V)
V DS = 5 V
R G = 390 k Ω
16
12
4V
3V
2V
8
4
V G2S = 1 V
0
4
5
VG1S (V)
25
15
I D (mA)
V G2S = 1 V
Forward Transfer Admittance vs.
Gate1 to Source Voltage
0
6
4V
3V
12
Drain Current
16
20
V DS = 5 V
R G = 220 k Ω
Forward Transfer Admittance |y fs | (mS)
Drain Current
I D (mA)
20
1
2
3
Gate1 to Source Voltage
4
5
VG1S (V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
25
V DS = 5 V
R G = 220 k Ω
20 f = 1 kHz
15
4V
3V
2V
10
5
V G2S = 1 V
0
1
2
3
Gate1 to Source Voltage
4
5
VG1S (V)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Power Gain vs. Gate Resistance
30
25
V DS = 5 V
R G = 390 k Ω
20 f = 1 kHz
25
4V
3V
15
Power Gain PG (dB)
Forward Transfer Admittance |y fs | (mS)
BB201M
2V
10
5
15
10
5
V G2S = 1 V
0
20
1
2
3
Gate1 to Source Voltage
0
50
4
5
VG1S (V)
V DS = 5 V
V G1S = 5 V
V G2S = 4 V
f = 900 MHz
100 200
500 1000 2000
5000
Gate Resistance R G (k Ω )
Noise Figure vs. Gate Resistance
Power Gain vs. Drain Current
4
30
Power Gain PG (dB)
Noise Figure NF (dB)
25
3
2
1
0
50
V DS = 5 V
V G1S = 5 V
V G2S = 4 V
f = 900 MHz
100 200
20
15
10
5
500 1000 2000
Gate Resistance R G (k Ω )
5000
0
V DS = 5 V
V G1S = 5 V
V G2S = 4 V
R G = variable
f = 900 MHz
5
10
15
20
25
30
Drain Current I D (mA)
7
BB201M
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
30
Drain Current I D (mA)
Noise Figure NF (dB)
4
3
2
1
0
V DS = 5 V
V G1S = 5 V
V G2S = 4 V
R G = variable
f = 900 MHz
5
10
15
20
25
15
10
5
V DS = 5 V
V G1S = 5 V
V G2S = 4 V
30
100 300 1000 3000 10000
Drain Current I D (mA)
Gate Resistance R G (k Ω )
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
4
V DS = 5 V
V G1S = 5 V
V G2S = 4 V
R G = 220 k Ω
f = 900 MHz
30
20
10
1
2
3
4
5
Gate2 to Source Voltage V G2S (V)
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
8
20
0
10
30
40
0
25
3
V DS = 5 V
V G1S = 5 V
R G = 220 k Ω
f = 1 MHz
2
1
0
1
2
3
4
5
Gate2 to Source Voltage V G2S (V)
BB201M
Output Capacitance vs.
Gate2 to Source Voltage
Output Capacitance Coss (pF)
4
3
V DS = 5 V
V G1S = 5 V
R G = 220 k Ω
f = 1 MHz
2
1
0
1
2
3
4
5
Gate2 to Source Voltage V G2S (V)
9
BB201M
Package Dimensions (Unit: mm)
0.2
+ 0.1
0.1
1.9 } 0.2
0.95 0.95
+ 0.1
0.4 – 0.05
0.4 – 0.05
4
+ 0.1
0.65 }
2.95 }
0.16 – 0.06
+ 0.1
0.4 – 0.05
0.85
0.95
2.8 } 0.2
0.65 }
2
1
+ 0.1
0.6 – 0.05
0 ~ 0.1
0.1
1.5 }
0.15
3
1.1}
0.1
0.8
1.8
10
Hitachi Code
EIAJ
JEDEC
MPAK–4R
—
—
BB201M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
11