BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain • Note 1 Marking is “BW–”. • Note 2 BB302M is individual type number of HITACHI BBFET. BB102M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate1 to source voltage VG1S +10 –0 V Gate2 to source voltage VG2S ±10 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 12 — — V I D = 200µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +10 — — V I G1 = +10µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±10 — — V I G2 = ±10µA, VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +9V, V G2S = VDS = 0 Gate2 to source cutoff current I G2SS — — ±100 nA VG2S = ±9V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.1 — 0.8 V VDS = 9V, VG2S = 6V, ID = 100µA Gate2 to source cutoff voltage VG2S(off) 0.5 — 1.1 V VDS = 9V, VG1S = 9V, ID = 100µA Drain current I D(op) 10 15 20 mA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 560kΩ Forward transfer admittance |yfs| 16 21 — mS VDS = 9V, VG1 = 9V, VG2S =6V RG = 560kΩ, f = 1kHz Input capacitance c iss 1.2 1.6 2.2 pF VDS = 9V, VG1 = 9V Output capacitance c oss 0.7 1.1 1.5 pF VG2S =6V, RG = 560kΩ Reverse transfer capacitance c rss — 0.011 0.03 pF f = 1MHz Power gain PG 16 20 — dB VDS = 9V, VG1 = 9V, VG2S =6V Noise figure NF — 2.1 3.1 dB RG = 120kΩ, f = 900MHz 2 BB102M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Application Circuit V DS = 9 V VAGC = 6 to 0.3 V BBFET RFC Output Input RG V GG = 9 V 3 BB102M 25 I D (mA) 200 150 Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 100 50 0 50 100 150 Ambient Temperature 15 10 0 4 8 10 V DS (V) Drain Current vs. Gate1 Voltage kΩ 330 Ω k 390 kΩ 470 k Ω 5600 k Ω 68 k Ω 820 Ω 1M Ω 1.5 M Ω 2.2 M RG= 1.2 2.4 3.8 Gate2 to Source Voltage V DS = 9 V R G = 470 k Ω Ω 4.8 6.0 VG2S (V) I D (mA) k 270 Drain Current I D (mA) Drain Current 5 2 4 6 Drain to Source Voltage 20 V DS = V G1 = 9 V 10 .2 M Ω RG= 2 5 Ta (°C) 25 15 70 20 Drain Current vs. Gate2 to Source Voltage 20 kΩ Ω 2 0k Ω 3 3 0k 39 0 k Ω 47 k Ω 0 56 k Ω 0 8 6 0kΩ 82 Ω 1M Ω 1.5 M V G2S = 6 V V G1 = VDS 0 200 Typical Output Characteristics 16 6 12 V 5V 4V 3V 2V 8 4 V G2S = 1 V 0 2 4 Gate1 Voltage 6 8 V G1 (V) 10 BB102M Drain Current vs. Gate1 Voltege Drain Current vs. Gate1 Voltege 12 8 V DS = 9 V R G = 560 k Ω I D (mA) 16 20 6V 5V 4V 3V 2V Drain Current Drain Current I D (mA) 20 4 V DS = 9 V R G = 680 k Ω 16 8 4 V G2S = 1 V V G2S = 1 V 2 4 6 8 Gate1 Voltage V G1 (V) Forward Transfer Admittance vs. Gate1 Voltage 25 20 15 10 5 6V 5V 4V 3V 2V V DS = 9 V R G = 470 k Ω f = 1 kHz V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 0 10 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) 0 6V 5V 4V 3V 2V 12 10 2 4 6 8 Gate1 Voltage V G1 (V) 10 Forward Transfer Admittance vs. Gate1 Voltage 25 20 15 10 5 6 V5 V 4V 3V 2V V DS = 9 V R G = 560 k Ω f = 1 kHz V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 5 Forward Transfer Admittance vs. Gate1 Voltage Power Gain vs. Gate Resistance 30 25 20 6 V5 V 15 25 4V V 3 2V V DS = 9 V R G = 680 k Ω f = 1 kHz 10 5 Power Gain PG (dB) Forward Transfer Admittance |y fs | (mS) BB102M 15 10 5 V G2S = 1 V 0 20 2 4 6 8 Gate1 Voltage V G1 (V) 0 10 10 Noise Figure vs. Gate Resistance V DS = 9 V V G1 = 9 V V G2S = 6 V f = 900 MHz 500 1000 25 Power Gain PG (dB) Noise Figure NF (dB) 100 200 Power Gain vs. Drain Current 1 20 15 10 5 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) 6 50 30 2 0 10 20 Gate Resistance R G (k Ω ) 4 3 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 900 MHz 0 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 900 MHz 5 10 15 20 25 30 Drain Current I D (mA) 35 40 BB102M Noise Figure vs. Drain Current Drain Current vs. Gate Resistance 40 Drain Current I D (mA) Noise Figure NF (dB) 4 3 2 1 0 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 900 MHz 5 10 15 20 25 30 35 10 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 3 Input Capacitance Ciss (pF) Gain Reduction GR (dB) 20 Drain Current I D (mA) 50 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = 560 k Ω f = 900 MHz 40 30 20 10 0 30 0 10 40 V DS = 9 V V G1 = 9 V V G2S = 6 V 1 2 3 4 5 6 7 Gate2 to Source Voltage V G2S (V) 2 1 V DS = 9 V V G1 = 9 V R G = 560 k Ω f = 1 MHz 0 1 2 3 4 5 6 Gate2 to Source Voltage V G2S (V) 7 BB102M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 to 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.01 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 to 1000 MHz (50 MHz step) 8 –2 –.6 –.8 –1 –1.5 Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 to 1000 MHz (50 MHz step) BB102M Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 560kΩ, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.995 –2.9 2.22 176.0 0.00046 66.9 0.977 –1.0 100 0.991 –6.0 2.21 172.0 0.00109 90.4 0.987 –3.2 150 0.987 –9.4 2.21 168.0 0.00122 76.5 0.987 –5.0 200 0.985 –12.4 2.19 163.6 0.00180 81.9 0.985 –6.7 250 0.975 –15.4 2.18 159.3 0.00228 86.0 0.983 –8.4 300 0.969 –18.4 2.15 155.3 0.00246 78.8 0.981 –10.0 350 0.954 –21.5 2.12 151.7 0.00273 76.2 0.979 –11.7 400 0.948 –24.6 2.11 147.6 0.00331 66.9 0.976 –13.4 450 0.933 –27.5 2.08 143.7 0.00334 74.7 0.973 –14.9 500 0.923 –30.7 2.05 139.9 0.00357 68.4 0.969 –16.8 550 0.912 –33.6 2.02 136.2 0.00328 67.5 0.965 –18.3 600 0.892 –36.3 1.99 123.9 0.00305 69.8 0.961 –19.9 650 0.882 –39.3 1.96 128.7 0.00322 66.7 0.958 –21.5 700 0.868 –42.0 1.92 125.4 0.00297 70.3 0.953 –23.4 750 0851 –45.0 1.90 122.0 0.00286 74.4 0.948 –24.7 800 0.834 –47.7 1.87 117.9 0.00273 71.9 0.944 –26.2 850 0.815 –50.6 1.83 114.9 0.00226 88.1 0.940 –27.9 900 0.801 –53.5 1.82 111.2 0.00143 95.5 0.934 –29.4 950 0.788 –55.9 1.79 107.8 0.00131 98.6 0.931 –31.0 1000 0.768 –58.5 1.77 104.4 0.00189 145.2 0.925 –32.9 9 BB102M Package Dimensions Unit: mm + 0.3 2.8 – 0.1 + 0.1 0.4 – 0.05 0.4 – 0.05 3 0.65 – 0.3 + 0.1 + 0.1 1.9 0.95 0.95 0.16 + 0.1 – 0.06 + 0.2 2.8 – 0.6 1.5 2 0 ~ 0.1 0.95 0.85 0.65 – 0.3 + 0.1 0.6 – 0.05 + 0.1 1 4 + 0.1 0.4 – 0.05 + 0.2 1.1 – 0.1 0.3 1.8 10 Hitachi Code EIAJ JEDEC MPAK–4 SC–61AA — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.