BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101C Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate 1 to source voltage VG1S +6 –0 V Gate 2 to source voltage VG2S ±6 V Drain current ID 25 mA Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C 2 BB101C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source break down voltage V(BR)DSS 6 — — V I D = 200 µA VG1S = VG2S = 0 Gate 1 to source breakdown voltage V(BR)G1SS +6 — — V I G1 = +10 µA VG2S = VDS = 0 Gate 2 to source breakdown voltage V(BR)G2SS ±6 — — V I G2 = +10 µA VG1S = VDS = 0 Gate 1 to source cutoff current I G1SS — — +100 nA VG1S = +5 V VG2S = VDS = 0 Gate 2 to source cutoff current I G2SS — — ±100 nA VG2S = ±5 V VG1S = VDS = 0 Gate 1 to source cutoff voltage VG1S(off) 0.2 — 0.8 V VDS = 5 V, VG2S = 4 V I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) 0.4 — 1.0 V VDS = 5 V, VG1S = 5 V I D = 100 µA Drain current I D(op) 10 15 20 mA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 220 kΩ Forward transfer admittance |yfs| 16 22 — mS VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 220 kΩ, f = 1 kHz Input capacitance Ciss 1.2 1.7 2.2 pF VDS = 5 V, VG1 = 5 V Output capacitance Coss 0.7 1.1 1.5 pF VG2S = 4 V, RG = 220 kΩ Reverse transfer capacitance Crss — 0.012 0.03 pF f = 1 MHz Power gain PG 16 20 — dB VDS = 5 V, VG1 = 5 V VG2S = 4 V Noise figure NF — 2.0 3.0 dB RG = 220 kΩ, f = 900 MHz Note: Marking is “AU–”. 3 BB101C Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID Application Circuit V DS = 5 V VAGC = 4 to 0.3 V BBFET Input RG V GG = 5 V 4 Output BB101C 150 100 50 0 50 100 150 20 10 5 Ambient Temperature Ta (°C) Drain Current vs. Gate2 to Source Voltage Drain Current ID (mA) VDS = VG1 = 5 V 20 15 10 5 0 kΩ Ω 0 k 0 1 120 kΩ 150 k Ω 180 kΩ 220 kΩ 270 kΩ 3300 k Ω 39 kΩ 470 RG = RG 1 2 3 4 Drain to Source Voltage VDS (V) 5 Drain Current vs. Gate1 Voltage VDS = 5 V RG = 150 kΩ 16 4 V V 3 12 2V 8 4 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) Ω k 0 kΩ 2 1 50 1 kΩ 0 18 k Ω 0 2 2 kΩ 0 7 2 kΩ 330 k Ω 390 0 kΩ = 47 20 Drain Current ID (mA) 25 VG2S = 4 V VG1 = VDS 15 0 200 Typical Output Characteristics kΩ 25 Drain Current ID (mA) Channel Power Dissipation Pch (mW) 200 10 0 Maximum Channel Power Dissipation Curve 0 VG2S = 1 V 1 2 3 4 5 Gate1 Voltage VG1 (V) 5 BB101C Drain Current vs.Gate1 Voltege Drain Current vs.Gate1 Voltege 20 Forward Transfer Admittance |y fs | (mS) Drain Current ID (mA) 16 4V 3V 12 2V 8 4 0 VG2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) 15 4V 3V 2V 10 5 VG2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) 4V 3V 2V 8 4 0 5 25 VDS = 5 V RG = 150 kΩ 20 f = 1 kHz 12 VG2S = 1 V Forward Transfer Admittance vs. Gate1 Voltage 0 6 VDS = 5 V RG = 390 kΩ VDS = 5 V RG = 220 kΩ Forward Transfer Admittance |y fs | (mS) Drain Current ID (mA) 16 20 5 1 2 3 4 Gate1 Voltage VG1 (V) 5 Forward Transfer Admittance vs. Gate1 Voltage 25 VDS =5V RG = 220 kΩ 20 f = 1 kHz 15 4V 3V 2V 10 5 VG2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 Forward Transfer Admittance vs. Gate1 Voltage Power Gain vs. Gate Resistance 30 25 VDS = 5 V RG = 390 kΩ 20 f = 1 kHz 15 25 4V 3V Power Gain PG (dB) Forward Transfer Admittance |y fs | (mS) BB101C 2V 10 20 15 10 5 5 VG2S = 1 V 0 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 1 2 3 4 Gate1 Voltage VG1 (V) 0 50 5 100 200 500 1000 2000 5000 Gate Resistance RG (kΩ) Noise Figure vs. Gate Resistance Power Gain vs. Drain Current 4 30 Power Gain PG (dB) Noise Figure NF (dB) 25 3 2 1 0 50 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 100 200 20 15 10 5 500 1000 2000 Gate Resistance RG (kΩ) 5000 0 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 5 10 15 20 25 30 Drain Current ID (mA) 7 BB101C Drain Current vs. Gate Resistance Noise Figure vs. Drain Current 30 4 Drain Current ID (mA) Noise Figure NF (dB) 25 3 2 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 900 MHz 1 0 5 20 15 10 5 10 15 20 25 0 10 30 Gain Reduction vs. Gate2 to Source Voltage 4 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = 220 kΩ f = 900 MHz 30 Input Capacitance Ciss (pF) Gain Reduction GR (dB) 100 300 1000 3000 10000 Input Capacitance vs. Gate2 to Source Voltage 40 20 10 1 2 3 4 Gate2 to Source Voltage VG2S (V) 8 30 Gate Resistance RG (kΩ) Drain Current ID (mA) 0 V DS = 5 V V G1 = 5 V V G2S = 4 V 5 VDS = 5 V VG1 = 5 V RG = 220 kΩ f = 1 MHz 3 2 1 0 1 2 3 4 Gate2 to Source Voltage VG2S (V) 5 BB101C Output Capacitance vs. Gate2 to Source Voltage Output Capacitance Coss (pF) 4 VDS = 5 V VG1= 5 V RG = 220 kΩ f = 1 MHz 3 2 1 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 9 BB101C Package Dimentions Unit: mm 1.3 0.65 0.65 + 0.1 + 0.1 0.3 – 0.05 0.3 – 0.05 3 0.425 2.0 ±0.2 + 0.1 0.16 – 0.06 2.1 ±0.3 1.25 2 0 ~ 0.1 1 4 + 0.1 0.4 – 0.05 0.65 0.6 0.425 + 0.1 0.3 – 0.05 0.9 ±0.1 0.2 1.25 10 Hitahi Code EIAJ JEDEC CMPAK-4 SC-82AB — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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