BB401M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-715A (Z) 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “AX–”. 2. BB401M is individual type number of HITACHI BBFET. BB401M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 –0 V Gate 2 to source voltage VG2S ±6 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V I D = 200µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +6 — — V I G1 = +10µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±6 — — V I G2 = ±10µA, VG1S = VDS = 0 Gate1 to cutoff current I G1SS — — +100 nA VG1S = +5V, V G2S = VDS = 0 Gate2 to cutoff current I G2SS — — ±100 nA VG2S = ±5V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.4 0.7 1.0 V VDS = 5V, VG2S = 4V, ID = 100µA Gate2 to source cutoff voltage VG2S(off) 0.4 0.7 1.0 V VDS = 5V, VG1S = 5V, ID = 100µA Drain current I D(op) 10 15 20 mA VDS = 5V, VG1 = 5V VG2S = 4V, RG = 100kΩ Forward transfer admittance |yfs| 15 20 — mS VDS = 5V, VG1 = 5V, VG2S =4V RG = 100kΩ, f = 1kHz Input capacitance c iss 2.2 3.0 3.9 pF VDS = 5V, VG1 = 5V Output capacitance c oss 0.9 1.2 1.6 pF VG2S =4V, RG = 100kΩ Reverse capacitance c rss — 0.018 0.04 pF f = 1MHz Power gain PG 22 26 — dB VDS = 5V, VG1 = 5V, VG2S =4V Noise figure NF — 1.3 1.9 dB RG = 100kΩ, f = 200MHz 2 Symbol BB401M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG1 VG2 RG Gate 1 Gate 2 Source A Drain ID Power Gain, Noise Figure Test Circuit 1000p 1000p 47k VT VG2 VT 1000p 47k 1000p 47k BBFET Output(50¶) 1000p L2 Input(50¶) L1 10p max 1000p 1000p 36p 1SV70 RG RFC 100k 1SV70 1000p V D = V G1 Unit@ Resistance@ (¶ ) @@ Capacitance@ (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns 3 BB401M Power vs. Temperature Derating 30 100 50 15 20 10 5 RG= 50 100 150 Ambient Temperature 0 200 Ta (°C) DC Current vs. Gate2 to Source Voltage 1 2 3 Drain to Source Voltage Ω k 82 k Ω 0 10 k Ω 0 2 1 0kΩ 15 k Ω 180 kΩ 220 4 5 V DS (V) DC Current vs. Gate1 to Source Voltage 25 20 V DS = 5 V R G = 82 k Ω RG 5 12 V 10 120 k Ω = 150 k Ω 3 100 k Ω V 15 16 4 82 k Ω Drain Current 20 I D (mA) Ω 68 k V DD = V GG = 5 V I D (mA) 47 5 k 68 6 k Ω k Ω Ω I D (mA) 150 0 Drain Current Typical Output Characteristics V G2S = 4 V 25 Drain Current Channel Dissipation Pch (mW) 200 2V 8 4 V G2S = 1 V 0 4 1 2 3 Gate2 to Source Voltage 4 5 VG2S (V) 0 1 2 3 Gate1 to Source Voltage 4 VG1S (V) 5 BB401M DC Current vs. Gate1 to Source Voltege DC Current vs. Gate1 to Source Voltege I D (mA) V 4 V 12 8 2V 4 Drain Current 16 20 V DS = 5 V R G = 100 k Ω 3 Drain Current I D (mA) 20 V DS = 5 V R G = 150 k Ω 16 12 4V 8 2V 4 V G2S = 1 V 1 2 3 Gate1 to Source Voltage 30 25 4V 3V 20 15 2V 10 5 V G2S = 1 V 0 1 2 3 Gate1 to Source Voltage 0 4 5 VG1S (V) Forward Transfer Admittance vs. Gate1 to Source Voltage V DS = 5 V R G = 82 k Ω f = 1 kHz V G2S = 1 V 4 5 V G1S (V) Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) 0 3V 1 2 3 Gate1 to Source Voltage 4 5 VG1S (V) Forward Transfer Admittance vs. Gate1 to Source Voltage 30 V DS = 5 V R G = 100 k Ω 25 f = 1 kHz 4V 3V 20 15 2V 10 5 V G2S = 1 V 0 1 2 3 Gate1 to Source Voltage 4 5 VG1S (V) 5 Forward Transfer Admittance vs. Gate1 to Source Voltage Power Gain vs. Gate Resistance 30 20 V DS = 5 V R G = 150 k Ω 16 f = 1 kHz 25 4V Power Gain PG (dB) Forward Transfer Admittance |y fs | (mS) BB401M 3V 12 2V 8 4 15 10 5 V G2S = 1 V 0 20 1 2 3 Gate1 to Source Voltage 4 0 10 5 VG1S (V) Noise Figure vs. Gate Resistance V DS = 5 V V G1S = 5 V V G2S = 4 V f = 200 MHz 500 1000 25 Power Gain PG (dB) Noise Figure NF (dB) 100 200 Power Gain vs. Drain Current 1 20 15 10 5 20 50 100 200 500 1000 Gate Resistance R G (k Ω ) 6 50 30 2 0 10 20 Gate Resistance R G (k Ω ) 4 3 V DS = 5 V V G1S = 5 V V G2S = 4 V f = 200 MHz 0 V DS = 5 V V G1S = 5 V V G2S = 4 V R G = variable f = 200 MHz 5 10 15 20 25 Drain Current I D (mA) 30 BB401M Noise Figure vs. Drain Current Drain Current vs. Gate Resistance 30 V DS = 5 V V G1S = 5 V V G2S = 4 V R G = variable f = 200 MHz 3 2 1 0 5 10 15 20 25 Drain Current I D (mA) Noise Figure NF (dB) 4 15 10 5 V DS = 5 V V G1S = 5 V V G2S = 4 V 20 50 100 200 500 1000 Drain Current I D (mA) Gate Resistance R G (k Ω ) Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 4 V DS = 5 V V G1S = 5 V V G2S = 4 V R G = 100 k Ω f = 200 MHz 50 40 30 20 10 1 2 3 4 5 Gate2 to Source Voltage V G2S (V) Input Capacitance Ciss (pF) Gain Reduction GR (dB) 20 0 10 30 60 0 25 3 2 1 0 V DS = 5 V V G1S = 5 V R G = 100 k Ω f = 1 MHz 1 2 3 4 5 Gate2 to Source Voltage V G2S (V) 7 BB401M Package Dimensions (Unit: mm) 0.2 + 0.1 0.1 1.9 } 0.2 0.95 0.95 + 0.1 0.4 – 0.05 0.4 – 0.05 4 + 0.1 0.65 } 2.95 } 0.16 – 0.06 + 0.1 0.4 – 0.05 0.85 0.95 2.8 } 0.2 0.65 } 2 1 + 0.1 0.6 – 0.05 0 ~ 0.1 0.1 1.5 } 0.15 3 1.1} 0.1 0.8 1.8 8 Hitachi Code EIAJ JEDEC MPAK–4R — — BB401M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 9