HITACHI BB302C

BB302C
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-573 A (Z)
2nd. Edition
September 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB302C
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
12
V
Gate1 to source voltage
VG1S
+10
V
–0
Gate2 to source voltage
VG2S
±10
V
Drain current
ID
25
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
V(BR)DSS
12
—
—
V
I D = 200µA
VG1S = VG2S = 0
voltage
Gate1 to source breakdown
V(BR)G1SS
+10
—
—
V
VG2S = VDS = 0
voltage
Gate2 to source breakdown
I G1 = +10µA
V(BR)G2SS
±10
—
—
V
I G2 = ±10µA
VG1S = VDS = 0
voltage
Gate1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +9V
VG2S = VDS = 0
Gate2 to source cutoff current I G2SS
—
—
±100
nA
VG2S = ±9V
VG1S = VDS = 0
Gate1 to source cutoff voltage VG1S(off)
0.4
—
1.0
V
VDS = 9V, VG2S = 6V
I D = 100µA
Gate2 to source cutoff voltage VG2S(off)
0.4
—
1.0
V
VDS = 9V, VG1S = 9V
I D = 100µA
Drain current
I D(op)
9
13
18
mA
VDS = 9V, VG1 = 9V
VG2S = 6V
RG = 120kΩ
Forward transfer admittance
|yfs|
15
20
—
mS
VDS = 9V, VG1 = 9V
VG2S =6V
RG = 120kΩ, f = 1kHz
Input capacitance
c iss
2.2
3.0
4.0
pF
VDS = 9V, VG1 = 9V
Output capacitance
c oss
0.8
1.1
1.5
pF
VG2S =6V, RG = 120kΩ
Reverse transfer capacitance c rss
—
0.017
0.04
pF
f = 1MHz
Power gain
22
26
—
dB
VDS = 9V, VG1 = 9V
PG
VG2S =6V
Noise figure
NF
—
1.7
2.2
dB
RG = 120kΩ
f = 200MHz
BB302C
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
V DS = 9 V
VAGC = 6 to 0.3 V
BBFET
Input
RG
V GG = 9 V
RFC
Output
BB302C
25
150
100
50
V G2S = 6 V
V G1 = VDS
20
15
10
5
R
0
50
100
Ambient Temperature
150
0
200
Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
100 k Ω
15
120 k Ω
150 k Ω
180 k Ω
200 k Ω
10
5
R G = 220 k Ω
I D (mA)
82 k Ω
8
10
V DS (V)
Drain Current vs. Gate1 Voltage
Drain Current
kΩ
20
2
4
6
Drain to Source Voltage
kΩ
0
0
1
kΩ
0
2
1 kΩ
0
15 k Ω
8
1 0kΩ
220
kΩ
270
=
G
20
68 k Ω
56
I D (mA)
Drain Current
Typical Output Characteristics
56
k
68 Ω
82 k Ω
k
Ω
I D (mA)
200
Drain Current
Channel Power Dissipation
Pch (mW)
Maximum Channel Power
Dissipation Curve
V DS = 9 V
R G = 100 k Ω
6V
5V
4V
16
12
3V
2V
8
4
V G2S = 1 V
V DS = V G1 = 9 V
0
1.2
2.4
3.8
Gate2 to Source Voltage
4.8
6.0
VG2S (V)
0
2
4
Gate1 Voltage
6
8
V G1 (V)
10
BB302C
Drain Current vs. Gate1 Voltege
Drain Current vs. Gate1 Voltege
I D (mA)
6V
5V
4V
12
3V
8
2V
4
0
Forward Transfer Admittance |y fs | (mS)
V DS = 9 V
R G = 120 k Ω
V G2S = 1 V
2
4
6
8
Gate1 Voltage V G1 (V)
25
V DS = 9 V
R G = 100 k Ω
20 f = 1 kHz
6V
5V
4V
3V
15
10
2V
V G2S = 1 V
0
2
4
6
8
Gate1 Voltage V G1 (V)
10
V DS = 9 V
R G = 150 k Ω
16
6V
5V
4V
12
8
3V
2V
4
0
10
Forward Transfer Admittance
vs. Gate1 Voltage
5
Drain Current
16
20
Forward Transfer Admittance |y fs | (mS)
Drain Current
I D (mA)
20
V G2S = 1 V
2
4
6
8
Gate1 Voltage V G1 (V)
10
Forward Transfer Admittance
vs. Gate1 Voltage
25
V DS = 9 V
R G = 120 k Ω
20 f = 1 kHz
6V
5V
4V
3V
15
10
2V
5
V G2S = 1 V
0
2
4
6
8
Gate1 Voltage V G1 (V)
10
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
25
20
V DS = 9 V
R G = 150 k Ω
f = 1 kHz
6V 5V 4V
25
Power Gain PG (dB)
Forward Transfer Admittance |y fs | (mS)
BB302C
3V
15
2V
10
5
15
10
5
V G2S = 1 V
0
20
2
4
6
8
Gate1 Voltage V G1 (V)
0
10
10
Noise Figure vs. Gate Resistance
100 200
500 1000
Power Gain vs. Drain Current
V DS = 9 V
V G1 = 9 V
V G2S = 6 V
f = 200 MHz
25
Power Gain PG (dB)
Noise Figure NF (dB)
50
30
2
1
20
15
10
5
0
10
20
Gate Resistance R G (k Ω )
4
3
V DS = 9 V
V G1 = 9 V
V G2S = 6 V
f = 200 MHz
20
50
100 200
500 1000
Gate Resistance R G (k Ω )
0
V DS = 9 V
V G1 = 9 V
V G2S = 6 V
R G = variable
f = 200 MHz
5
10
15
20
25
Drain Current I D (mA)
30
BB302C
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
30
V DS = 9 V
V G1 = 9 V
V G2S = 6 V
R G = variable
f = 200 MHz
3
Drain Current I D (mA)
Noise Figure NF (dB)
4
2
1
0
5
10
15
20
25
15
10
5
V DS = 9 V
V G1 = 9 V
V G2S = 6 V
20
50
100 200
500 1000
Drain Current I D (mA)
Gate Resistance R G (k Ω )
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
6
V DS = 9 V
V G1 = 9 V
V G2S = 6 V
R G = 120 k Ω
f = 200 MHz
50
40
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
20
0
10
30
60
30
20
10
0
25
5
4
3
2
V DS = 9 V
V G1 = 9 V
R G = 120 k Ω
f = 1 MHz
1
0
1
2
3
4
5
6
7
Gate2 to Source Voltage V G2S (V)
1
2
3
4
5
6
Gate2 to Source Voltage V G2S (V)
BB302C
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Test Condition : V DS = 9 V , V G1 = 9 V
V G2S = 6 V , R G = 120 k Ω
50 to 1000 MHz (50 MHz step)
Test Condition : V DS = 9 V , V G1 = 9 V
V G2S = 6 V , R G = 120 k Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.01 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition : V DS = 9 V , V G1 = 9 V
V G2S = 6 V , R G = 120 k Ω
50 to 1000 MHz (50 MHz step)
–2
–.6
–.8
–1
–1.5
Test Condition : V DS = 9 V , V G1 = 9 V
V G2S = 6 V , R G = 120 k Ω
50 to 1000 MHz (50 MHz step)
BB302C
Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 120kΩ, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
0.988
–5.2
2.13
174.1
0.00052
90.0
0.985
–1.3
100
0.986
–10.4
2.13
167.9
0.00087
72.5
0.993
–3.6
150
0.979
–16.0
2.12
161.6
0.00156
79.4
0.992
–5.5
200
0.964
–21.5
2.08
155.2
0.00226
78.4
0.990
–7.5
250
0.948
–26.9
2.04
149.1
0.00254
71.0
0.987
–9.6
300
0.939
–32.0
2.00
143.0
0.00339
72.0
0.985
–11.4
350
0.920
–37.3
1.95
137.3
0.00335
59.0
0.982
–13.3
400
0.904
–42.3
1.91
131.5
0.00338
66.3
0.978
–15.3
450
0.885
–47.1
1.86
125.7
0.00351
62.2
0.974
–17.1
500
0.864
–51.7
1.81
120.1
0.00347
56.6
0.970
–18.9
550
0.848
–56.5
1.76
115.1
0.00355
61.5
0.966
–21.0
600
0.826
–60.9
1.70
110.1
0.00300
61.4
0.961
–22.7
650
0.808
–65.0
1.66
104.7
0.00289
51.1
0.957
–24.5
700
0.789
–69.4
1.61
100.3
0.00246
57.6
0.952
–26.6
750
0.773
–73.7
1.56
95.4
0.00211
70.0
0.947
–28.3
800
0.755
–77.9
1.51
90.5
0.00166
77.5
0.943
–30.2
850
0.735
–82.1
1.47
85.9
0.00165
114.5
0.937
–32.2
900
0.721
–86.3
1.42
81.3
0.00123
114.5
0.933
–34.1
950
0.703
–90.7
1.39
76.9
0.00176
145.8
0.927
–35.9
1000
0.677
–93.9
1.34
72.4
0.00204
164.0
0.923
–37.9
BB302C
Package Dimensions
Unit: mm
1.3
0.65 0.65
+ 0.1
+ 0.1
0.3 – 0.05
0.3 – 0.05
3
0.425
2.0 ±0.2
+ 0.1
0.16 – 0.06
2.1 ±0.3
1.25
2
0 ~ 0.1
1
4
+ 0.1
0.4 – 0.05
0.65
0.6
0.425
+ 0.1
0.3 – 0.05
0.9 ±0.1
0.2
1.25
Hitahi Code
EIAJ
JEDEC
CMPAK-4
SC-82AB
—
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.