BB202M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-714A (Z) 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “BV–”. 2. BB202M is individual type number of HITACHI BBFET. BB202M Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate1 to source voltage VG1S +10 –0 V Gate2 to source voltage VG2S ±10 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 12 — — V I D = 200µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +10 — — V I G1 = +10µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±10 — — V I G2 = ±10µA, VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — +100 nA VG1S = +9V, V G2S = VDS = 0 Gate2 to source cutoff current I G2SS — — ±100 nA VG2S = ±9V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.1 0.4 0.8 V VDS = 9V, VG2S = 6V, ID = 100µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.8 1.1 V VDS = 9V, VG1S = 9V, ID = 100µA Drain current I D(op) 10 15 20 mA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 560kΩ Forward transfer admittance |yfs| 16 21 — mS VDS = 9V, VG1 = 9V, VG2S =6V RG = 560kΩ, f = 1kHz Input capacitance c iss 1.2 1.6 2.2 pF VDS = 9V, VG1 = 9V Output capacitance c oss 0.7 1.1 1.5 pF VG2S =6V, RG = 560kΩ Reverse transfer capacitance c rss — 0.011 0.03 pF f = 1MHz Power gain PG 16 20 — dB VDS = 9V, VG1 = 9V, VG2S =6V Noise figure NF — 2.1 3.1 dB RG = 560kΩ, f = 900MHz 2 BB202M Main Characteristics Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG) VG1 VG2 RG Gate 2 Gate 1 Source Drain A ID Application Circuit V DS = 9 V VAGC = 6 to 0.3 V BBFET RFC Output Input RG V GG = 9 V 3 BB202M 900MHz Power Gain, Noise Test Circuit VD V G1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC D G2 Output L3 L4 G1 Input S L1 L2 C1 C1, C2F C3 F C4‘C6 F R1 F R2 F R3 F C2 Variable Capacitori10pF MAX) Disk Capacitori1000pF) Air Capacitori1000pF) 560 k¶ 47 k¶ 4.7 k¶ L2F L1F 10 3 3 8 10 26 i1mm Copper wirej UnitFmm 21 L4F L3F 18 10 10 7 7 29 RFCF1mm Copper wire with enamel 4turns inside d 4 i BB202M 25 I D (mA) 200 150 Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 100 50 0 50 100 150 Ambient Temperature 20 15 10 Ta (°C) 0 kΩ 330 Ω k 390 kΩ 470 k Ω 0 56 0 k Ω 68 k Ω 820 Ω 1M Ω 1.5 M RG= 1.2 2.4 3.6 Gate2 to Source Voltage V DS = 9 V R G = 470 k Ω Ω 2.2 M Ω 4.8 6.0 VG2S (V) I D (mA) k 270 Drain Current I D (mA) Drain Current 5 8 10 V DS (V) 20 V DS = V G1 = 9 V 10 2 4 6 Drain to Source Voltage Drain Current vs. Gate1 Voltage 25 15 .2 M Ω RG= 2 5 Drain Current vs. Gate2 to Source Voltage 20 kΩ 0 kΩ 7 2 0 Ω 33 0 k 9 k 3 0 Ω 47 k Ω 0 56 k Ω 0 8 6 0kΩ 82 Ω 1M Ω 1.5 M V G2S = 6 V V G1 = VDS 0 200 Typical Output Characteristics 16 6 12 V 5V 4V 3V 2V 8 4 V G2S = 1 V 0 2 4 Gate1 Voltage 6 8 10 V G1 (V) 5 BB202M Drain Current vs. Gate1 Voltege Drain Current vs. Gate1 Voltege 12 8 V DS = 9 V R G = 560 k Ω I D (mA) 16 20 6V 5V 4V 3V 2V Drain Current Drain Current I D (mA) 20 4 V DS = 9 V R G = 680 k Ω 16 8 4 V G2S = 1 V V G2S = 1 V 25 20 15 10 5 6V 5V 4V 3V 2V V DS = 9 V R G = 470 k Ω f = 1 kHz V G2S = 1 V 2 4 6 8 Gate1 Voltage V G1 (V) 0 10 Forward Transfer Admittance vs. Gate1 Voltage 0 6 2 4 6 8 Gate1 Voltage V G1 (V) Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance |y fs | (mS) 0 6V 5V 4V 3V 2V 12 10 2 4 6 8 Gate1 Voltage V G1 (V) 10 Forward Transfer Admittance vs. Gate1 Voltage 25 20 15 10 5 6 V5 V 4V 3V 2V V DS = 9 V R G = 560 k Ω f = 1 kHz V G2S = 1 V 0 2 4 6 8 Gate1 Voltage V G1 (V) 10 Forward Transfer Admittance vs. Gate1 Voltage Power Gain vs. Gate Resistance 30 25 20 6 V5 V 15 25 4V V 3 2V V DS = 9 V R G = 680 k Ω f = 1 kHz 10 5 Power Gain PG (dB) Forward Transfer Admittance |y fs | (mS) BB202M 15 10 5 V G2S = 1 V 0 20 2 4 6 8 Gate1 Voltage V G1 (V) 0 10 100 Noise Figure vs. Gate Resistance 5000 10000 Power Gain vs. Drain Current V DS = 9 V V G1 = 9 V V G2S = 6 V f = 900 MHz 25 Power Gain PG (dB) Noise Figure NF (dB) 500 1000 2000 30 2 1 20 15 10 5 0 100 200 Gate Resistance R G (k Ω ) 4 3 V DS = 9 V V G1 = 9 V V G2S = 6 V f = 900 MHz 200 500 1000 2000 5000 10000 Gate Resistance R G (k Ω ) 0 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 900 MHz 5 10 15 20 25 30 35 40 Drain Current I D (mA) 7 BB202M Noise Figure vs. Drain Current Drain Current vs. Gate Resistance 40 Drain Current I D (mA) Noise Figure NF (dB) 4 3 2 1 0 V DS = 9 V V G1 = 9 V V G2S = 6 V R G = variable f = 900 MHz 5 10 20 25 30 35 40 10 100 200 500 1000 2000 5000 10000 Gate Resistance R G (k Ω ) Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage 3 Input Capacitance Ciss (pF) Gain Reduction GR (dB) 20 Drain Current I D (mA) V DS = 9 V V G1 = 9 V V G2S = 6 V R G = 560 k Ω f = 900 MHz 40 30 20 10 1 2 3 4 5 6 7 Gate2 to Source Voltage V G2S (V) 8 30 0 15 50 0 V DS = 9 V V G1 = 9 V V G2S = 6 V 2 1 V DS = 9 V V G1 = 9 V R G = 560 k Ω f = 1 MHz 0 1 2 3 4 5 6 Gate2 to Source Voltage V G2S (V) BB202M S21 Parameter vs. Frequency S11 Parameter vs. Frequency .8 1 .6 90° 1.5 Scale: 1 / div. 60° 120° 2 .4 3 30° 150° 4 5 .2 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180° 0° –10 –5 –4 –.2 –3 –.4 –30° –150° –2 –.6 –.8 –1 –90° Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 ‘ 1000 MHz (50 MHz step) Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 ‘ 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90° S22 Parameter vs. Frequency Scale: 0.01 / div. .8 60° 120° –60° –120° –1.5 1 .6 1.5 2 .4 3 30° 150° 4 5 .2 10 180° 0° .2 0 .4 .6 .8 1 1.5 2 3 45 10 –10 –5 –4 –.2 –30° –150° –3 –.4 –60° –120° –90° Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 ‘ 1000 MHz (50 MHz step) –2 –.6 –.8 –1 –1.5 Test Condition : V DS = 9 V , V G1 = 9 V V G2S = 6 V , R G = 560 k Ω 50 ‘ 1000 MHz (50 MHz step) 9 BB202M Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 560kΩ, Zo = 50Ω) S11 S21 S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 50 0.995 –2.9 2.22 176.0 0.00046 66.9 0.977 –1.0 100 0.991 –6.0 2.21 172.0 0.00109 90.4 0.987 –3.2 150 0.987 –9.4 2.21 168.0 0.00122 76.5 0.987 –5.0 200 0.985 –12.4 2.19 163.6 0.00180 81.9 0.985 –6.7 250 0.975 –15.4 2.18 159.3 0.00228 86.0 0.983 –8.4 300 0.969 –18.4 2.15 155.3 0.00246 78.8 0.981 –10.0 350 0.954 –21.5 2.12 151.7 0.00273 76.2 0.979 –11.7 400 0.948 –24.6 2.11 147.6 0.00331 66.9 0.976 –13.4 450 0.933 –27.5 2.08 143.7 0.00334 74.7 0.973 –14.9 500 0.923 –30.7 2.05 139.9 0.00357 68.4 0.969 –16.8 550 0.912 –33.6 2.02 136.2 0.00328 67.5 0.965 –18.3 600 0.892 –36.3 1.99 123.9 0.00305 69.8 0.961 –19.9 650 0.882 –39.3 1.96 128.7 0.00322 66.7 0.958 –21.5 700 0.868 –42.0 1.92 125.4 0.00297 70.3 0.953 –23.4 750 0.851 –45.0 1.90 122.0 0.00286 74.4 0.948 –24.7 800 0.834 –47.7 1.87 117.9 0.00273 71.9 0.944 –26.2 850 0.815 –50.6 1.83 114.9 0.00226 88.1 0.940 –27.9 900 0.801 –53.5 1.82 111.2 0.00143 95.5 0.934 –29.4 950 0.788 –55.9 1.79 107.8 0.00131 98.6 0.931 –31.0 1000 0.768 –58.5 1.77 104.4 0.00189 145.2 0.925 –32.9 10 BB202M Package Dimensions (Unit: mm) 0.2 + 0.1 0.1 1.9 } 0.2 0.95 0.95 + 0.1 0.4 – 0.05 0.4 – 0.05 4 + 0.1 0.65 } 2.95 } 0.16 – 0.06 + 0.1 0.4 – 0.05 0.85 0.95 2.8 } 0.2 0.65 } 2 1 + 0.1 0.6 – 0.05 0 ~ 0.1 0.1 1.5 } 0.15 3 1.1} 0.1 0.8 1.8 Hitachi Code EIAJ JEDEC MPAK–4R — — 11 BB202M Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 12