HITACHI 3SK321

3SK321
Silicon N-Channel Dual Gate MOS FET
ADE-208-711A (Z)
2nd. Edition
Dec. 1998
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
3SK321
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
12
V
Gate 1 to source voltage
VG1S
±8
V
Gate 2 to source voltage
VG2S
±8
V
Drain current
ID
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSX
12
—
—
V
I D = 200 µA , VG1S = –3 V,
VG2S = –3 V
Gate 1 to source breakdown
voltage
V(BR)G1SS
±8
—
—
V
I G1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
V(BR) G2SS
±8
—
—
V
I G2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
I G1SS
—
—
±100
nA
VG1S = ±6 V, VG2S = VDS = 0
Gate 2 cutoff current
I G2SS
—
—
±100
nA
VG2S = ±6 V, VG1S = VDS = 0
Drain current
I DS(on)
0.5
—
10
mA
VDS = 6 V, VG1S = 0.5V,
VG2S = 3 V
Gate 1 to source cutoff voltage VG1S(off)
–0.5
—
+0.5
V
VDS = 10 V, VG2S = 3V,
I D = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
0
—
+1.0
V
VDS = 10 V, VG1S = 3V,
I D = 100 µA
Forward transfer admittance
|yfs|
16
20.8
—
mS
VDS = 6 V, VG2S = 3V,
I D = 10 mA, f = 1 kHz
Input capacitance
Ciss
1.2
1.5
2.2
pF
VDS = 6 V, VG2S = 3V,
I D = 10 mA, f = 1 MHz
Output capacitance
Coss
0.6
0.9
1.2
pF
Reverse transfer capacitance
Crss
—
0.01
0.03
pF
Power gain
PG
16
19.5
—
dB
Noise figure
NF
—
2.0
3
dB
Note: Marking is “ZX–”
2
VDS = 4 V, VG2S = 3V,
I D = 10 mA, f = 900 MHz
3SK321
Main Characteristics
900MHz Power Gain, Noise Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
D
G2
Output
L4
L3
G1
Input
S
L1
L2
C1
C1, C2 ：
C3 ：
C4∼C6 ：
R1 ：
R2 ：
R3 ：
C2
Variable Capacitor（10pF MAX)
Disk Capacitor（1000pF)
Air Capacitor（1000pF)
47 kΩ
47 kΩ
4.7 kΩ
L2：
L1：
10
3
3
8
10
26
（φ1mm Copper wire）
Unit：mm
21
L4：
10
10
18
29
7
7
L3：
RFC：φ1mm Copper wire with enamel 4turns inside dia 6mm
3
3SK321
200
I D (mA)
Pulse test
(mA)
VG2S = 3 V
150
1.2 V
16
ID
1.0 V
Drain current
12
100
50
0
Drain current
Typical Output Characteristics
20
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
V DS = 6 V
2.0 V
Pulse test
2.5 V
16
1.5 V
12
8
1.0 V
4
0.8 V
8
0.6 V
4
0
50
100
150
200
Ambient Temperature Ta (°C)
VG1S = 0.4 V
2
4
6
8
10
Drain to source voltage VDS (V)
Drain Current vs. Gate2 to Source Voltage
20
2.0 V
V DS = 6 V
1.5 V
Drain current I D (mA)
Channel Power Dissipation
Pch (mW)
Maximum Channel Power
Dissipation Curve
Pulse test
16
1.0 V
12
8
VG1S = 0.5 V
4
VG2S = 0.5 V
0
1
2
3
4
Gate1 to source voltage VG1S (V)
4
5
0
1
2
3
4
5
Gate2 to source voltage VG2S (V)
3SK321
Power Gain vs. Drain Current
25
VDS = 6 V
f = 1 kHz
24
V G2S = 3.0 V
18
2.5 V
2.0 V
12
1.5 V
6
PG (dB)
30
Power gain
Forward transfer admittance |yfs| (mS)
Forward Transfer Admittance vs.
Gate1 to Source Voltage
1.0 V
20
15
10
0.5 V
0
0.4
0.8
1.2
1.6
0
1
2.0
Gate1 to source voltage VG1S (V)
20
10
I D (mA)
25
4
PG (dB)
VDS = 4 V
VG2S = 3 V
f = 900 MHz
3
Power gain
NF (dB)
5
Power Gain vs. Drain to Source Voltage
Noise Figure vs. Drain Current
2
1
0
1
2
Drain current
5
Noise figure
VDS = 4 V
VG2S = 3 V
f = 900 MHz
5
20
15
10
VG2S = 3 V
I D = 10 mA
f = 900 MHz
5
2
5
Drain current
10
I D (mA)
20
0
2
4
6
Drain to source voltage
8
VDS
10
(V)
5
3SK321
Noise Figure vs. Drain to Source Voltage
Noise figure
NF (dB)
5
4
3
2
VG2S = 3 V
I D = 10 mA
f = 900 MHz
1
0
2
4
6
Drain to source voltage
6
8
VDS
10
(V)
3SK321
S11 Parameter vs. Frequency
.8
1
S21 Parameter vs. Frequency
Scale: 0.5 / div.
90°
1.5
.6
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–.4
–30°
–150°
–3
–2
–.6
–.8
–1
–90°
Condition: V DS = 4 V , V G2S = 3 V
I D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
Condition: V DS = 4 V , V G2S = 3 V
I D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.002/ div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1.0 1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V DS = 4 V , V G2S = 3 V
I D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
–2
–.6
–.8
–1
–1.5
Condition: V DS = 4 V , V G2S = 3 V
I D = 10 mA , Zo = 50 Ω
100 to 1000 MHz (50 MHz step)
7
3SK321
S Parameter (VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
100
0.999
–6.1
1.98
172.2
0.00094
79.2
0.989
–4.2
150
0.998
–9.1
1.97
168.4
0.00189
80.4
0.987
–6.1
200
0.992
–11.9
1.96
165.0
0.00230
79.5
0.986
–7.9
250
0.988
–14.8
1.96
161.0
0.00286
79.9
0.984
–9.8
300
0.985
–17.9
1.94
157.1
0.00364
75.2
0.981
–11.5
350
0.976
–20.6
1.92
153.7
0.00353
71.8
0.978
–13.4
400
0.971
–23.2
1.91
149.9
0.00419
70.7
0.975
–15.2
450
0.964
–26.3
1.88
146.8
0.00495
65.5
0.972
–17.2
500
0.961
–29.1
1.87
142.8
0.00509
62.7
0.968
–19.1
550
0.951
–32.2
1.86
139.4
0.00530
66.6
0.963
–20.8
600
0.949
–35.0
1.86
136.1
0.00550
63.8
0.960
–22.8
650
0.935
–37.6
1.81
132.9
0.00601
58.2
0.956
–24.5
700
0.933
–40.5
1.78
129.4
0.00582
60.6
0.950
–26.3
750
0.923
–42.9
1.77
125.7
0.00572
58.5
0.945
–28.0
800
0.916
–45.8
1.75
122.6
0.00553
56.3
0.941
–29.9
850
0.908
–49.0
1.72
119.1
0.00514
56.3
0.936
–31.7
900
0.900
–51.2
1.70
115.8
0.00543
52.9
0.930
–33.4
950
0.890
–54.0
1.67
112.6
0.00506
52.4
0.924
–35.2
1000
0.876
–56.4
1.65
109.3
0.00469
51.9
0.919
–37.0
8
S21
S12
S22
3SK321
Package Dimensions
Unit: mm
1.9 ±0.2
0.95 0.95
+ 0.1
+ 0.1
0.4 – 0.05
0.4 – 0.05
4
0.65 ± 0.1
2.95 ±0.2
+ 0.1
0.16 – 0.06
2.8 ± 0.2
1.5 ± 0.15
3
0 ~ 0.1
+ 0.1
0.4 – 0.05
0.85
0.95
0.65 ± 0.1
2
1
+ 0.1
0.6 – 0.05
1.1± 0.1
0.8
1.8
Hitachi Code
EIAJ
JEDEC
MPAK–4R
—
—
9
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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