ROHM DTA143TUB

Transistors
!
! ! DTA143TUB
! ! ! ! ! !
! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !
-100mA / -50V Digital transistors
(with built-in resistors)
DTA143TUB
zDimensions (Unit : mm)
zApplications
Inverter, Interface, Driver
UMT3F
zStructure
PNP silicon epitaxial planar transistor type
(Resistor built-in)
0.53
0.9
(3)
(1)
(2)
0.13
0.65 0.65
1.3
0.53
2.1
1.25 0.425
2.0
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : 93
zEquivalent circuit
C
zPackaging specifications
B
Package
UMT3F
Packaging type
Taping
R1
E
TL
Code
Part No.
0.32
0.425
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
B : Base
C : Collector
E : Emitter
3000
Basic ordering unit (pieces)
DTA143TUB
R1=4.7kΩ
zAbsolute maximum ratings (Ta=25qC)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Power dissipation
PD ∗
200
mW
Junction temperature
Tj
150
°C
Tstg
−55 to +150
°C
Parameter
Range of storage temperature
∗ Each terminal mounted on a recommended land
1/2
Transistors
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! ! DTA143TUB
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zElectrical characteristics (Ta=25qC)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC=−50μA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE=−50μA
ICBO
−
−
−500
nA
VCB=−50V
Collector cut-off current
Conditions
IEBO
−
−
−500
nA
VEB=−4V
VCE(sat)
−
−
−0.3
V
IC=−5mA, IB=−0.25mA
hFE
fT ∗
100
250
600
−
Transition frequency
−
250
−
MHz
Input resistance
R1
3.29
4.7
6.11
kΩ
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
VCE=−5V, IC=−1mA
VCE=−10V, IE=5mA, f=100MHz
−
∗ Characteristics of built-in transistor
1k
VCE=−5V
DC CURRENT GAIN : hFE
500
200
100
50
Ta=100°C
25°C
−40°C
20
10
5
2
1
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
! ! !
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
−1
−500m
−200m
lC/lB=20
Ta=100°C
25°C
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100μ −200μ −500μ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
Copyright © 2007 ROHM CO.,LTD.
THE AMERICAS / EUPOPE / ASIA / JAPAN
Contact us : [email protected] rohm.co. jp
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Appendix1-Rev2.0