MP6H1 Transistors General purpose (Dual digital transistors) MP6H1 zFeatures 1) High hFE. hFE=300(Min.)(VCE / IC=2V/500mA) 2) Low saturation voltage. VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA) 3) Built in Zener diode for protection against surges when connected to inductive load. zDimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3) zStructure NPN silicon epitaxial planar transistor (Resistor built-in type) zApplications Driver zPackaging specifications and hFE Package Packaging style Type Code Basic ordering unit(pieces) MP6H1 zEquivalent circuit MPT6 Taping TR 1000 ○ (6) (4) (5) R=10kΩ R Di DTr1 DTr2 Di R (1) (2) (3) (1) : Emitter (2) : Base (3) : Collector (4) : Emitter (5) : Base (6) : Collector (DTr1) (DTr1) (DTr2) (DTr2) (DTr2) (DTr1) zAbsolute maximum ratings (Ta=25°C) 《DTR1》 《DTR2》 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous Pulsed Symbol VCBO VCEO VEBO IC ICP ∗1 Power dissipation PD *2 Junction temperature Storage temperature Tｊ Tstg Unit Limits V 60±10 V 60±10 V 5 A 1 A 2 2.0 W/TOTAL W/ELEMENT 1.4 150 ℃ -55 to +150 ℃ ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a ceramic board Rev.A 1/3 MP6H1 Transistor zElectrical characteristics (Ta=25°C) 《DTR1》 《DTR2》 Parameter Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) Min. Typ. 50 50 5 300 - - DC current gain hFE 300 - Emitter-base resistance Transition frequency R fT * 7 - 10 80 Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Max. 70 70 500 580 400 Test Conditions Unit V V V nA µA mV IC=1mA IC=50µA IE=720µA VCB=40V VEB=4V IC/IB=500mA/5mA - - VCE=2V,IC=500mA 13 kΩ - MHｚ VCE=5V,IE=-100mA,f=30MHz ∗ Characteristics of built-in transistor. Rev.A 2/3 MP6H1 Transistor zElectrical characteristic curves 500 Ta=125℃ Ta=25℃ Ta=-40℃ 0.1 400 10000 IB=600µA Ta=25℃ pulsed Ta=25℃ pulsed IB=500µA IB=400µA 300 IB=300µA 200 IB=200µA DC Current Gain : hFE VCE=2V pulsed Collector Current : IC [mA] Collector Current : IC [A] 1 VCE=5V 1000 VCE=2V 100 100 IB=100µA 0.1 0 0.5 1 1.5 2 Collector to Emitter Voltage : VCE [V] 1 10 Base to Emitter Voltage : VBE [V] Fig.1 Grounded Emitter Propagation Characteristics Fig.2 Typical Output Characteristics 10000 100 Ta=25℃ Ta=125℃ IC/IB=100/1 pulsed IC/IB=200/1 Collector Saturation Voltage : VCE(sat) [V] Collector Saturation Voltage : VCE(sat) [V] 1000 10 10 Ta=25℃ pulsed Ta=-40℃ 0.01 0.1 1 Collector Current : IC [A] Fig.3 DC Current Gain vs Collector Current Ⅰ 10 VCE=2V pulsed DC Current Gain : hFE 10 0.001 0 0.01 1 0.1 IC/IB=100/1 1 Ta=125℃ Ta=25℃ 0.1 Ta=-40℃ 10 0.001 0.01 0.1 1 Collector Current : IC [A] 0.01 0.01 10 Fig.4 DC Current Gain vs Collector Current Ⅱ 10 Fig.5 Collector-Emitter Saturation Voltage vs Collector Current Ⅰ 10 0.01 0.01 0.1 1 Collector Current : IC [A] Pw = 1ms Ta=-40℃ Ta=25℃ Ta=125℃ 1 0.1 0.01 1 0.1 10 Fig.7 Base-Emitter Saturation Voltage vs Collector Current DC Operation Pw = 10ms 0.01 0.001 0.1 1 Collector Current : IC [A] 10 Fig.6 Collector-Emitter Saturation Voltage vs Collector Current Ⅱ 10 IC/IB=10/1 pulsed Collector Current : IC [ A ] Base-Emitter Saturation Voltage : VBE(sat) [V] 0.1 1 Collector Current : IC [A] Ta=25℃ Single pulse Mounted on a ceramic board 0.1 1 10 100 Collector to Emitter Voltage : VCE [ V ] Fig.8 Maximum Safe Operating Area Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0