US6H23 Transistors Dual digital transistors US6H23 zDimensions (Unit : mm) TUMT6 0.2Max. zFeatures In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. zStructure NPN silicon epitaxial planar transistor Abbreviated symbol : H23 zEquivalent circuit zPackaging specifications and hFE Type Package TUMT6 Packaging type Taping (6) TR Code R=4.7kΩ 3000 Basic ordering unit (pieces) (5) (4) R=4.7kΩ TR1 TR2 US6H23 (1) (2) (3) (1) : Emitter<<Tr1>> (2) : Base<<Tr1>> (3) : Collector<<Tr2>> (4) : Emitter<<Tr2>> (5) : Base<<Tr2>> (6) : Collector<<Tr1>> zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 20 20 12 600 1 0.4(TOTAL) 1.0(TOTAL) 0.7(ELEMENT) 150 −55 to +150 Unit V V V mA A ∗1 W ∗2 W ∗3 W ∗3 °C °C ∗1 Pw=10ms 1 Pulse ∗2 Each terminal mounted on a recommended land ∗3 Mounted on a ceramic board 1/3 US6H23 Transistor zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions 20 Collector-emitter breakdown voltage BVCEO − − V IC=1mA BVCBO 20 Collector-base breakdown voltage − − V IC=50µA BVEBO 12 Emitter-base breakdown voltage − − V IE=50µA ICBO Collector cutoff current − − 500 nA VCB=20V IEBO Emitter cutoff current − − 500 nA VEB=12V 40 Collector-emitter saturation voltage VCE (sat) − 150 mV IC / IB=50mA / 2.5mA hFE VCE=5V, IC=50mA DC current gain 820 − 2700 − fT ∗ Transition frequency − 150 − MHz VCE=10V, IE=50mA, f=100MHz Cob ∗ Collector output capacitance − 6 − pF VCB=10V, IE= 0mA, f=1MHz R − Input resistance 3.29 4.7 6.11 kΩ Ron Output ON resistance 0.55 − − Ω VI=5V, RL=1kΩ, f=1kHz ∗Characteristics of built-in transistor. zRon measurement circuit RL=1kΩ Ron= v0 ×RL vi−v0 vi 100mV(rms) f=1kHz V v0 vI Fig.1 Output "ON" resistance (Ron) measurement circuit 2/3 US6H23 Transistor zElectrical characterristic curves 100 1 0.1 0.1 1 Ta=125˚C 25˚C −40˚C 0.01 0.001 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current IB=30uA IB=20uA 40 IB=10uA 20 1000 100 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1000 Fig.3 DC current gain vs. collector current Fig.2 Typical output characteristics BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.1 60 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Ic/Ib=20 IB=40uA Ta=125°C Ta=25°C Ta= −40°C COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) 1 80 0 10 VCE=5V IB=50uA 1000 100000 Ic/Ib=20 Ta=25°C f=1kHz RL=1kΩ hFE=1500 (5V / 50mA) 10000 ON RESISTANCE : Ron (Ω) 10 10000 Ta=25˚C DC CURRENT GAIN : hFE VCE=5V Ta=125˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) 100 100 10 Ta=−40˚C 25˚C 125˚C 1 0.1 0.1 1 10 COLLECTOR CURRENT : IC (mA) Fig.5 Base-emitter saturation voltage vs. collector current 100 1000 100 10 1 0.1 0.1 1 10 100 INPUT VOLTAGE : VI (V) Fig.6 "ON" resistance vs. input voltage 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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