QSH29 Transistors Dual digital transistors QSH29 zFeatures In addition to the standard features of digital transistor, this transisitor has: 1) Low collector saturation voltage, typically VCE (sat) =100mV for IC / IB=100mA / 1mA(Typ.) 2) High current gain, minimum hFE=500mA for VCE=5V, IC=200mA. 3) Built in Zener diode for protection against surges when connected to inductive load. zDimensions (Unit : mm) TSMT6 Abbreviated symbol : H29 zStructure NPN silicon epitaxial planar transistor zApplications Driver zEquivalent circuit zPackaging specifications and hFE Type Package TSMT6 Packaging type Taping (6) Di 3000 Basic ordering unit (pieces) R=10kΩ R TR Code (4) (5) DTr1 DTr2 Di QSH29 R (1) (2) (3) (1) : Emitter (2) : Base (3) : Collector (4) : Emitter (5) : Base (6) : Collector (DTr1) (DTr1) (DTr2) (DTr2) (DTr2) (DTr1) zAbsolute maximum ratings (Ta=25°C) << DTr1>> << DTr2>> Parameter Symbol VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage Continuous IC Collector current Pulsed ICP Power dissipation Junction temperature Range of storage temperature PD Tj Tstg Unit Limits V 60±10 V 60±10 5 V 500 mA ∗1 1 A 1.25 W/TOTAL ∗2 0.9 W/1 ELEMENT ∗2 150 °C −55 to +150 °C ∗1 Pw=10ms 1 Pulse ∗2 Each terminal mounted on a ceramic board 1/3 QSH29 Transistor zElectrical characteristics (Ta=25°C) << DTr1>> << DTr2>> Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 50 − 70 V IC=50µA BVCBO Collector-base breakdown voltage 50 − 70 V IC=50µA BVEBO 5.0 Emitter-base breakdown voltage − − V IE=720µA ICBO Collector cut-off current − − 0.5 µA VCB=40V IEBO Emitter cut-off current 300 − 580 µA VEB=4V 100 300 mV IC=100mA, IB=1mA Collector-emitter saturation voltage VCE (sat) − hFE VCE=5V, IC=200mA DC current gain 500 − − − − R Emitter-base resistance 7 10 13 kΩ 2/3 QSH29 Transistor zElectrical characterristic curves 125˚C 25˚C −40˚C 0.1 0.01 1 IB=400uA 300 IB=300uA IB=200uA 200 100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.1 0.1 3 4 5 10 Ic/Ib=200/1 Ic/Ib=150/1 Ic/Ib=100/1 0.01 0.01 2 6 7 8 9 10 1 0.001 10 1 COLLECTOR CURRENT : IC (A) 1 Ic/Ib=100/1 125°C 25°C −40°C 0.1 0.01 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( ) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ) −40°C 25°C 125°C 100 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.3 DC Current Gain vs. Collector Current Fig.2 Typical Output Characteristics Ta=25˚C 1 1 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded Emitter Propagation Characteristics 10 IB=100uA 0 0 VCE=5V IB=500uA 400 10 BASE TO EMITTER VOLTAGE : VBE (V) 10000 IB=600uA BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 0.001 0.1 Ta=25˚C DC CURRENT GAIN : hFE 500 VCE=2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) 1 10 1 0.1 0.001 Ic/Ib=10/1 −40˚C 25˚C 125˚C 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter Saturation Voltage vs. Collector Current COLLECTOR CURRENT : IC (A) 10 Ta=25˚C Pulsed 1ms 1 DC (Ta=25˚C) 0.1 10ms 100ms 0.01 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe Operating Area 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. 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