ETC IRHSNA57Z60

PD-94237E
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSNA57Z60
30V, N-CHANNEL
Product Summary
Part Number
IRHSNA57Z60
RDS(on)
3.5mΩ
QG
200nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
n
n
n
n
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSLNA57Z60 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID@ VGS = 12V, TC = 25°C
ID@ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulse Drain Current ➀
Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
VDS
Drain-to-Source Voltage
IF(AV)@VGS =12V, TC =25°C Schottky and Body Diode Avg. Forward Currentƒ
IF(AV)@VGS =12V, TC =100°C Schottky and Body Diode Avg. Forward Currentƒ
TJ, TSTG
Operating Junction and Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
75*
75*
300
250
2.0
+20
30
75*
75*
-55 to 150
300 (for 10sec)
3.3 (Typical)
A
W
W/°C
V
A
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/15/02
IRHSNA57Z60
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
30
—
—
—
—
2.0
45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Test Conditions
3.5
V
mΩ
VGS = 0V, ID = 1.0mA
VGS = 12V, ID = 45A‚
4.0
—
50
50
V
S( )
µA
mA
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 45A‚
VDS = 24V, VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 45A,
VDS = 15V
ns
VDD = 15V, ID = 45A,
VGS =12V, RG = 2.35Ω
Ω
Parameter
BVDSS
RDS(on)
—
100
— -100
—
200
—
55
—
40
—
35
—
160
—
78
—
26
7.03
—
nA
nH
Measured from center of drain
pad to center of source pad
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
VSD
Min Typ Max Units
Diode Forward Voltage
—
—
—
—
—
—
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
LS + LD Total Inductance
ton
Forward Turn-On Time
—
1.15
—
1.05
—
0.95
—
175
—
500
8.09 —
V
nS
nC
nH
Test Conditions
TJ = -55°C, ID=45A, VGS = 0V‚
TJ = 25°C, ID= 45A, VGS = 0V‚
TJ = 110°C, ID=45A, VGS = 0V‚
Tj = 25°C, IF =45A, di/dt ≤ 100A/µs
VDS ≤ 30V
Measured from center of drain pad to
center of source pad (for Schottky only)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD
Thermal Resistance
Parameter
RthJC
RthJC
Junction-to-Case (MOSFET)
Junction-to-Case (Schottky)
Min Typ Max
—
—
—
—
0.5
0.7
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
www.irf.com
IRHSNA57Z60
10000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
100
10
4.5V
20µs PULSE WIDTH
T = 25 C
°
J
1
0.1
1
10
4.5V
10
20µs PULSE WIDTH
T = 150 C
100
°
J
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
2.0
TJ = 150 ° C
TJ = 25 ° C
10
V DS = 15V
20µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
8.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 75A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRHSNA57Z60
VGS , Gate-to-Source Voltage (V)
20
ID = 45A
VDS = 24V
VDS = 15V
16
12
8
4
0
0
50
100
150
200
250
300
QG , Total Gate Charge (nC)
Fig 5. Typical Gate Charge Vs.
Gate-to-Source Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 5a. Basic Gate Charge Waveform
4
Fig 5b. Gate Charge Test Circuit
www.irf.com
IRHSNA57Z60
200
RD
VDS
LIMITED BY PACKAGE
I D , Drain Current (A)
VGS
D.U.T.
150
RG
100
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
- VDD
12V
Fig 7a. Switching Time Test Circuit
50
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 6. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 7b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET
www.irf.com
5
IRHSNA57Z60
EAS , Single Pulse Avalanche Energy (mJ)
1500
ID
33.5A
47.4A
BOTTOM 75A
TOP
1200
900
600
300
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 9. Maximum Avalanche Energy
Vs. Drain Current
V (B R )D SS
15V
tp
L
VD S
D.U .T.
RG
IA S
12V
20V
tp
DR IV E R
+
V
- DD
0.01 Ω
Fig 9a. Unclamped Inductive Test Circuit
6
A
IAS
Fig 9b. Unclamped Inductive Waveforms
www.irf.com
IRHSNA57Z60
MOSFET Body Diode & Schottky Diode Characteristics
Instantaneous Forward Current - I S (A)
100
10
Tj = 110°C
Tj = 25°C
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V SD (V)
Fig. 10 - Typical Forward Voltage Drop Characterstics
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky
www.irf.com
7
IRHSNA57Z60
Footnotes:
➀ Repetitive Rating; Pulse width limited by maximum junction temperature
➁ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➂ 50% Duty Cycle, Rectangular
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/02
8
www.irf.com