IRF IRL7YS1404CM

PD - 94676
HEXFET® POWER MOSFET
THRU-HOLE (Low-ohmic TO-257AA)
IRL7YS1404CM
40V, N-CHANNEL
Product Summary
Part Number
IRL7YS1404CM
RDS(on)
0.007Ω
BVDSS
40V
ID
20A*
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
Low Ohmic
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
20*
20*
80
100
0.8
±20
785
20
10
1.8
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/02/03
IRL7YS1404CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
l Ciss
C oss
C rss
Rg
Typ Max Units
Test Conditions
40
—
—
V
VGS = 0V, ID = 250µA
—
0.04
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
1.0
85
—
—
—
—
—
—
—
—
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.74
100
-100
115
35
45
37
180
85
40
—
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
6470
1600
165
2.86
—
—
—
—
Gate Resistance
0.007
Ω
0.0085
3.0
V
—
S( )
20
µA
250
Ω
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
nA
nC
ns
nH
pF
Ω
VGS = 10V, ID = 20A ➃
VGS = 4.5V, ID = 20A
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 20A ➃
VDS = 40V ,VGS=0V
VDS = 32V,
VGS = 0V, TJ=125°C
VGS = 20V
VGS = -20V
VGS =5.0V, ID = 20A
VDS = 32V
VDD = 20V, ID = 20A,
VGS = 5.0V, RG = 2.5Ω
Measured from drain lead (6mm/
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 0.78MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
20*
80
1.3
90
200
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 20A, VGS = 0V ➃
Tj = 25°C, IF = 20A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.25
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
IRL7YS1404CM
1000
VGS
15V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1000
VGS
15V
10V
8.0V
6.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
100
10
3.0V
60µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
3.0V
10
60µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current ( Α)
T J = 25°C
T J = 150°C
10
VDS = 20V
15
60µs PULSE
WIDTH
3
3.5
4
4.5
5
5.5
6
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
100
Fig 2. Typical Output Characteristics
1000
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
1
ID = 20A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL7YS1404CM
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
8000
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
Ciss
6000
Coss
4000
2000
20
VGS , Gate-to-Source Voltage (V)
10000
ID = 20A
VDS = 32V
VDS = 20V
VDS = 8V
16
12
8
4
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
50
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current ( Α)
200
250
1000
T J = 150°C
T J = 25°C
1
VGS = 0V
0.1
0.2
0.6
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
1.0
1.4
1.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
150
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
100
QG , Total Gate Charge (nC)
100µs
1
2.2
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
0
10ms
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRL7YS1404CM
100
LIMITED BY PACKAGE
VGS
80
I D , Drain Current (A)
RD
V DS
D.U.T.
RG
+
-V DD
VGS
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRL7YS1404CM
1 5V
EAS , Single Pulse Avalanche Energy (mJ)
2500
ID
9.0A
12.6A
BOTTOM 20A
TOP
2000
D R IV E R
L
VD S
1500
D .U .T.
RG
+
V
- DD
IA S
VGS
20V
tp
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
1000
500
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
12V
.2µF
.3µF
QG
10V
D.U.T.
QGS
+
V
- DS
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRL7YS1404CM
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 20A, di/dt ≤ 175A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 3.9mH
Peak IAS = 20A, VGS =10V, RG= 25Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
VDD ≤ 40V, TJ ≤ 150°C
Case Outline and Dimensions — Low-ohmic TO-257AA
0.13 [.005]
A
3.81 [.150]
3X Ø
3.56 [.140]
10.66 [.420]
10.42 [.410]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
1
2
5.08 [.200]
4.83 [.190]
10.92 [.430]
10.42 [.410]
1.14 [.045]
0.89 [.035]
B
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120]
B
NOTES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994.
CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS TO JEDEC OUTLINE T O-257AA.
P IN AS S IGNME NT S
1 = DRAIN
2 = S OURCE
3 = GAT E
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/03
www.irf.com
7