PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT130A/71 PH: (561)283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING: Collector to Base BVCBO BVEBO Emitter to Base Collector to Emitter 45 Vdc 7.0 Vdc 45 Vdc 50 mAdc BVCEO IC Collector Current Power Dissipation TA = 25 °C PD PD 0.5 (Both Sides) Watts Tstg -65 to +200 °C Operating Temperature TJ -65 to +200 Lead Temperature From Case TL °C °C Power Dissipation TC = 25 °C Storage Temperature ELECTRICAL CHARACTERISTICS TA @ 25 ° C PARAMETERS SYMBOL Collector to Collector Voltage BVCCO Emitter to Base Voltage BVEBO Collector to Emitter Voltage Collector to Emitter Voltage Collector Cutoff Current Collector Cutoff Current TEST CONDITIONS Watts MIN 60 TYP MAX UNIT Vdc Vdc BVCEO(sus) BVCEO IC=1.0mA ICBO ICBO VCB =45V 1.0 nA VCB =45V, TA =150°C 10 µA Collector Cutoff Current Collector Cutoff Current ICEX ICEX Emitter Cutoff Current I EBO 45 Vdc Vdc µA VEB=5.0V 1.0 µA nA D.C. Current Gain Pulsed* h FE D.C. Current Gain Pulsed* h FE IC=10µA, VCE =5.0V IC=1.0mA, VCE =5.0V D.C. Current Gain Pulsed* h FE IC=10µA, VCE =5.0V, TA = -55°C D.C. Current Gain Pulsed* h FE - D.C. Current Gain Pulsed* h FE - Saturation Voltage* Saturation Voltage* Base Emitter Voltage* Base Emitter Voltage* Base Emitter Voltage* Current Gain at F = Emitter Transition Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Output Capacitance VCE(sat) VCE(sat) 200 - 225 - 75 - IC=0.5mA, IB=0.05mA 0.5 Vdc Vdc VBE(sat) VBE(sat) Vdc Vdc VBE(on) h FE IC=10µA, VCE =5.0V CTE CC1-C2 VEB=0.5V 2.5 pF VCC =0 4.0 pF IC1-C2 Cob VCC = ±60V VCB =5.0V 10 nA 2.0 pF Frequency Cutoff Transition Frequency Notes: *Pulse Width ≤300usec 2% Duty Cycle f&b fT 0.7 Vdc - IC=10µA, VCE =5.0V IC=1.0mA, VCE =5.0V MHz MHz 5 110 Page 1 of 2 TYPE: IT130A/71 SMALL SIGNAL CHARACTERISTICS Input Impedance SYMBOL UNITS Ohms Voltage Feedback Ratio X10-4 Output Admittance µmhos Base Current Differential IC = 10µA VCE = 5V DC Current Gain Ratio Base-Emitter Voltage Differential IC =10µA, VCE =5.0V Base-Emitter Voltage Differential Change Due to Temp IC =10µA, VCE =5.0V TA = -55°C to +125°C MIN TYP | IB1 – IB2 | MAX 2.5 nA VBE1 -VBE2 1.0 mV ∆(VBE1-VBE2) 3.0 µV/°C MAX UNITS h FE1/h FE2 SWITCHING CHARACTERISTICS Turn-On Time SYMBOL ton MIN TYP Turn-Off Time toff ns ns Delay Time td ns Rise Time tr ns Storage Time ts ns Fall Time tf ns FUNCTIONAL TEST Common-Emitter Amplifier Power Gain Power Output Collector Efficiency Power Output SYMBOL GPE MIN TYP MAX UNITS dB Pout Watt η % Pout Watt Page 2 of 2