IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current -10mA Maximum Temperatures Storage Temperature Range -65°C to +150°C Operating Junction Temperature -55°C to +150°C Maximum Power Dissipation ONE SIDE B1 E1 E2 B2 BOTH SIDES Device Dissipation TA=25°C 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3W/°C TOP VIEW 26 X 29 MILS ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC IT130A IT130 IT131 IT132 UNITS CONDITIONS BVCBO Collector to Base Voltage -45 -45 -45 -45 MIN. V IC = -10µA IE = 0A BVCEO Collector to Emitter Voltage -45 -45 -45 -45 MIN. V IC = -10µA IB = 0A BVEBO Emitter-Base Breakdown Voltage -6.2 -6.2 -6.2 -6.2 MIN. V IE = -10µA IC = 0A NOTE 2 BVCCO Collector to Collector Voltage ±60 ±60 ±60 ±60 MIN. V ICCO = ±10µA IB= IE=0A hFE DC Current Gain 200 200 80 80 MIN. 225 225 100 100 MIN. VCE(SAT) Collector Saturation Voltage -0.5 -0.5 -0.5 -0.5 MAX. V IC = -0.5mA IB = -0.05mA IEBO Emitter Cutoff Current -1 -1 -1 -1 MAX. nA IC = 0A VEB = -3V ICBO Collector Cutoff Current -1 -1 -1 -1 MAX. nA IE = 0A VCB = -45V 2 2 2 2 MAX. pF IE = 0A VCB = -5V 4 4 4 MAX. pF VCC = 0V ±500 ±500 ±500 MAX. nA VCC = ±60V, IB= IE=0A COBO Output Capacitance 4 4 CC1C2 Collector to Collector Capacitance IC1C2 Collector to Collector Leakage Current fT Current Gain Bandwidth Product NF Narrow Band Noise Figure 4 4 4 ±500 IC = -10µA VCE = -5V IC = -1.0mA VCE = -5V 110 110 90 90 MIN. MHz IC = -1mA 3 3 3 3 MAX. dB IC = -100µA VCE = -5V VCE = -5V BW = 200Hz, RG = 10 KΩ f=1KHz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC │VBE1-VBE2│ Base Emitter Voltage Differential 1 2 3 5 MAX. mV IC = -10 µA VCE = -5V ∆│(VBE1-VBE2)│/∆T Base Emitter Voltage Differential 3 5 10 20 MAX. µV/°C IC = 10 µA VCE = 5V 2.5 5 25 25 MAX. nA T = -55°C to +125°C IC = -10 µA VCE = -5V │IB1-IB2│ Change with Temperature Base Current Differential IT130A IT130 IT131 IT132 UNITS CONDITIONS 4 C1 C2 B1 B2 E1 E2 N/C N/C 0.210 0.170 C1 C2 B1 B2 E1 E2 N/C N/C Note: All Dimensions in inches NOTES: 1. 2. 3. 4. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only. Not a production test. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132