IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector Current Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor E2 6 B2 1 C1 -65°C to +200°C +150°C ONE SIDE 250mW 2.3mW/°C 5 B1 2 10mA Maximum Temperatures Storage Temperature Range Operating Junction Temperature 3 B1 BOTH SIDES 500mW 4.3mW/°C E1 E2 7 C2 B2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS BVCBO Collector to Base Voltage IT130A 45 IT130 45 IT131 45 IT132 UNITS CONDITIONS 45 MIN. V IC = 10µA IE = 0 BVCEO Collector to Emitter Voltage 45 45 45 45 MIN. V IC = 10µA IB = 0 BVEBO Emitter-Base Breakdown Voltage 6.2 6.2 6.2 6.2 MIN. V IE = 10µA IC = 0 BVCCO Collector to Collector Voltage 60 60 60 60 MIN. V IC = 10µA IE = 0 hFE DC Current Gain 200 200 80 80 MIN. IC = 10µA VCE = 5V 225 225 100 100 MIN. IC = 1.0mA VCE = 5V NOTE 2 VCE(SAT) Collector Saturation Voltage 0.5 0.5 0.5 0.5 MAX. V IC = 0.5mA IB = 0.05mA IEBO Emitter Cutoff Current 1 1 1 1 MAX. nA IC = 0 ICBO Collector Cutoff Current 1 1 1 1 MAX. nA IE = 0 VCB = 45V COBO Output Capacitance 2 2 2 2 MAX. pF IE = 0 VCB = 5V CC1C2 Collector to Collector Capacitance 4 4 4 4 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 10 10 10 10 MAX. nA VCC= ±60V fT Current Gain Bandwidth Product 110 110 90 90 MIN. MHz IC = 1mA NF Narrow Band Noise Figure 3 3 3 3 MAX. dB VEB = 3V VCE = 5V IC = 100µA VCE = 5V BW = 200Hz, RG = 10 KΩ f=1KHz Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT130A IT130 |VBE1-VBE2| Base Emitter Voltage Differential 1 2 ∆|(VBE1-VBE2)|/∆T Base Emitter Voltage Differential 3 IT131 3 IT132 5 10 20 5 UNITS CONDITIONS MAX. mV IC = 10 µA VCE = 5V MAX. µV/°C Change with Temperature |IB1- IB2| T = -55°C Base Current Differential 2.5 TO-71 5 25 0.230 DIA. 0.209 0.030 MAX. 0.150 0.115 6 LEADS 25 MAX. nA TO-78 0.500 MIN. 0.019 DIA. 0.016 0.305 0.335 MAX. 0.040 0.165 0.185 MIN. 0.500 0.016 0.021 DIM. B +125°C VCE = 5V 0.320 (8.13) 0.290 (7.37) 0.335 0.370 0.016 0.019 DIM. A IC = 10 µA VCE = 5V to P-DIP Six Lead 0.195 DIA. 0.175 IC = 10 µA SEATING PLANE 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.200 0.100 0.050 5 6 45° 0.046 0.036 7 SOIC 2 3 4 1 5 8 7 6 2 3 4 1 8 0.100 0.029 0.045 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.048 0.028 0.188 (4.78) 0.197 (5.00) 0.028 0.034 C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261