ETC STD4NB25T4

STD4NB25
®
N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK
PowerMESH MOSFET
PRELIMINARY DATA
ν
ν
ν
ν
ν
ν
TYPE
VDSS
R DS(on)
ID
STD4NB25
250 V
< 1.1 Ω
4A
TYPICAL RDS(on) = 0.95 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
FOR TROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
3
1
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
ν
SWITCH MODE POWER SUPPLIES (SMPS)
ν
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
V GS
Parameter
Value
Unit
Drain-source Voltage (V GS = 0)
250
V
Drain- gate Voltage (R GS = 20 kΩ)
250
V
Gate-source Voltage
± 30
V
4
A
Drain Current (continuous) at T c = 100 C
2.5
A
Drain Current (pulsed)
16
A
40
W
0.32
W/ o C
5.5
V/ns
ID
Drain Current (continuous) at T c = 25 o C
ID
o
I DM (•)
P tot
o
Total Dissipation at T c = 25 C
Derating Factor
dv/dt(1 )
T stg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
February 2000
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-65 to 150
o
C
150
o
C
(1) ISD ≤4 Α, di/dt â 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
STD4NB25
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink
Tl
o
3.12
100
1.5
275
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
Parameter
4
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR , V DD = 50 V)
75
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
ID = 250 µA
Zero Gate Voltage
VDS = Max Rating
Drain Current (V GS = 0) VDS = Max Rating
I GSS
Gate-body Leakage
Current (V DS = 0)
Typ.
Max.
250
V GS = 0
I DSS
Min.
Unit
V
T c = 125 o C
VGS = ± 30 V
1
10
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold
Voltage
VDS = V GS
I D = 250 µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10V
I D =2 A
I D(on)
On State Drain Current V DS > ID(on) x R DS(on)max
VGS = 10 V
Min.
Typ.
Max.
Unit
3
4
5
V
0.95
1.1
Ω
4
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
Parameter
Test Conditions
Forward
Transconductance
VDS > ID(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
2/6
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f = 1 MHz
I D =2 A
V GS = 0
Min.
Typ.
0.7
1.6
260
70
9
Max.
Unit
S
350
100
13
pF
pF
pF
STD4NB25
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
VDD = 125 V
R G = 4.7 Ω
ID = 3 A
VGS = 10 V
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 200 V
I D = 6 A V GS = 10 V
Min.
Typ.
Max.
Unit
9
9
13
13
ns
ns
12
7.5
3
17
nC
nC
nC
Typ.
Max.
Unit
8
7
15
11
10
20
ns
ns
ns
Typ.
Max.
Unit
4
16
A
A
1.5
V
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
VDD = 200 V ID = 6 A
R G = 4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗)
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 6 A di/dt = 100 A/µs
VDD = 100 V
T j = 150 o C
t rr
Q rr
IRRM
Min.
V GS = 0
160
ns
720
nC
9
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
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STD4NB25
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
4/6
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STD4NB25
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL "A"
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL "A"
L4
0068772-B
5/6
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STD4NB25
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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