STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh™ MOSFET PRELIMINARY DATA TYPE STW18NB40 STH18NB40FI ■ ■ ■ ■ ■ VDSS RDS(on) ID 400 V 400 V < 0.26 Ω < 0.26 Ω 18.4 A 12.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 3 2 2 1 1 ISOWATT218 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW18NB40 VDS VDGR VGS Unit STH18NB40FI Drain-source Voltage (VGS = 0) 400 V Drain-gate Voltage (RGS = 20 kΩ) 400 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 18.4 12.4 A ID Drain Current (continuos) at TC = 100°C 11.6 7.8 A Drain Current (pulsed) 73.6 73.6 A Total Dissipation at TC = 25°C 190 80 W Derating Factor 1.52 0.64 W/°C Peak Diode Recovery voltage slope 4.5 4.5 V/ns - 2000 V IDM (l) PTOT dv/dt (1) VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1)ISD<18.4A, di/dt<200A/µ, VDD<V(BR)DSS,TJ<T JMAX June 2002 1/7 STW18NB40/STH18NB40FI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max TO-247 ISOWATT218 0.66 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 18.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 450 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V V(BR)DSS Min. Typ. Max. 400 Unit V VDS = Max Rating, TC = 125 °C 1 µA 50 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 6.2 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 5 V 0.19 0.26 Ω 18.4 A DYNAMIC Symbol gfs (1) 2/7 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 9.2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 9.3 S 2480 pF Ciss Input Capacitance Coss Output Capacitance 435 pF Crss Reverse Transfer Capacitance 47 pF STW18NB40/STH18NB40FI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 200 V, ID = 9.2 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 27 ns 14 ns VDD = 320V, ID = 18.4 A, VGS = 10V 60 84 nC 16 nC 28.3 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 320V, ID = 18.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 13 ns 15 ns 27 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 18.4 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 18.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 18.4 A 73.6 A 1.6 V 480 ns 5.5 µC 23 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/7 STW18NB40/STH18NB40FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STW18NB40/STH18NB40FI TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. 0.19 TYP. MAX. A 4.85 5.15 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 5/7 STW18NB40/STH18NB40FI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 6/7 STW18NB40/STH18NB40FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 7/7