Composite Transistors XP04683 (XP4683) NPN epitaxial planer transistor (Tr1) PNP epitaxial planer transistor (Tr2) Unit: mm For high-frequency amplification (Tr1) For general amplification (Tr2) ● 1 6 2 5 3 4 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. ● 2SC2404 + 2SB0709A(2SB709A) ■ Absolute Maximum Ratings Parameter Tr1 Tr2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 150 mW Overall Junction temperature Storage temperature +0.05 0.12 –0.02 0 to 0.1 ■ Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● 0.425 0.65 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 Tj 150 ˚C Tstg –55 to +150 ˚C 0.2±0.1 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: ER Internal Connection 1 Tr1 5 2 3 6 Tr2 4 Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol Conditions min typ max 30 Unit Collector to base voltage VCBO IC = 10µA, IE = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE VCE = 6V, IC = –1mA 40 Base to emitter voltage VBE VCB = 6V, IE = –1mA 720 Common emitter reverse transfer capacitance Cre VCB = 6V, IE = –1mA, f = 10.7MHz 0.8 Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz 650 MHz Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB ● 450 V V 260 mV 1 pF Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 ICBO VCB = –20V, IE = 0 Collector cutoff current 2 XP04683 ICEO VCE = –10V, IB = 0 Forward current transfer ratio hFE VCE = –10V, IC = –2mA V 160 – 0.1 µA –100 µA 460 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz – 0.3 80 – 0.5 MHz V Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF Composite Transistors XP04683 Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE IC — IB IC — VBE 12 12 30 Ta=25˚C 10 80µA 8 60µA 6 40µA 4 20µA 8 6 4 2 2 4 8 12 40 VCE(sat) — IC 3 1 0.3 25˚C Ta=75˚C –25˚C 0.3 1 3 10 10 120 160 0 0.4 30 Collector current IC (mA) 100 0.8 1.2 2.0 fT — IE 1200 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 1.6 Base to emitter voltage VBE (V) VCE=6V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.01 0.1 80 360 IC/IB=10 0.03 15 hFE — IC 30 0.1 20 Base current IB (µA) Collector to emitter voltage VCE (V) 100 –25˚C 0 0 16 0.3 1 3 VCB=6V Ta=25˚C Transition frequency fT (MHz) 0 Ta=75˚C 5 0 0 25˚C 25 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) 10 VCE=6V VCE=6V Ta=25˚C IB=100µA 10 30 Collector current IC (mA) 100 1000 800 600 400 200 0 –0.1 –0.3 –1 –3 –10 –30 –100 Emitter current IE (mA) 3 Composite Transistors XP04683 Cre — VCE 100 80 60 40 20 0 –0.1 –0.3 –1 –3 –10 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 Emitter current IE (mA) 0.8 0.6 0.4 0.2 3 10 30 100 0 5 10 15 20 25 f=100MHz Rg=50Ω Ta=25˚C VCE=10V 6V 20 15 10 f=100MHz Rg=50Ω Ta=25˚C 10 8 6 VCE=6V, 10V 4 2 5 0 –0.1 –0.3 –1 –3 –10 Emitter current IE –30 0 –0.1 –0.3 –100 (mA) –1 –3 –10 –30 –100 Emitter current IE (mA) Characteristics charts of Tr2 IC — VCE IC — I B –400 Ta=25˚C –200µA –150µA –20 –100µA –10 –50µA Base current IB (µA) –40 –30 –40 –30 –20 –2 –4 –6 –8 –10 –12 –14 –16 –18 Collector to emitter voltage VCE (V) –300 –250 –200 –150 –100 –10 –50 0 0 0 VCE=–5V Ta=25˚C –350 –50 –250µA Collector current IC (mA) Collector current IC (mA) VCE=–5V Ta=25˚C IB=–300µA –50 4 IB — VBE –60 –60 0 0 –100 –200 –300 –400 Base current IB (µA) 30 Collector to base voltage VCB (V) NF — IE Noise figure NF (dB) Power gain PG (dB) 1 12 25 1.0 0 0.3 PG — IE 30 f=1MHz IE=0 Ta=25˚C Collector to emitter voltage VCE (V) 40 35 Cob — VCB 1.2 Collector output capacitance Cob (pF) Reverse transfer impedance Zrb (Ω) VCB=6V f=2MHz Ta=25˚C Common emitter reverse transfer capacitance Cre (pF) Zrb — IE 120 0 –0.4 –0.8 –1.2 –1.6 Base to emitter voltage VBE (V) Composite Transistors XP04683 IC — VBE VCE(sat) — IC –10 25˚C Collector current IC (mA) –200 Ta=75˚C –25˚C –160 –120 –80 –40 hFE — IC IC/IB=10 –3 Ta=75˚C 25˚C –1 –0.3 –25˚C –0.1 –0.03 –0.01 –0.003 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 –0.001 –1 fT — IE –10 –30 –100 –300 –1000 VCE=–10V 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) Cob — VCB 8 160 Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C Transition frequency fT (MHz) –3 Collector current IC (mA) Base to emitter voltage VBE (V) 140 120 100 80 60 40 20 0 0.1 600 Forward current transfer ratio hFE VCE=–5V Collector to emitter saturation voltage VCE(sat) (V) –240 0.3 1 3 10 30 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 1 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to base voltage VCB (V) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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