Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 30 A Collector current IC 20 A Base current IB 10 A Collector power TC=25°C dissipation Ta=25°C 200 PC Junction temperature Tj Storage temperature Tstg 3.5 ■ Electrical Characteristics 4.0 2.0 2.0 26.0±0.5 10.0 1.5 1.5 2.0±0.3 Solder Dip ● 1.5 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package W 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ VCB = 1000V, IE = 0 max Unit 50 µA Collector cutoff current ICBO VCB = 1700V, IE = 0 1 mA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA Forward current transfer ratio hFE VCE = 5V, IC = 10A Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 2.8A Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 2.8A Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg Fall time tf IC = 12A, IB1 = 2.4A, IB2 = –4.8A 7 14 3 1.5 3 V V MHz 4.0 µs 0.3 µs 1