Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 25 A Collector current IC 15 A Base current IB 7.5 A Collector power TC=25°C Ta=25°C dissipation 60 PC Junction temperature Tj Storage temperature Tstg 10.0 23.4 22.0±0.5 26.5±0.5 2.0 1.2 5.45±0.3 5° 0.7±0.1 5.45±0.3 5° 1 2 3 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package W 3.0 ■ Electrical Characteristics 2.0 (Ta=25˚C) 5° 5° 5° 4.0 2.0±0.2 1.1±0.1 18.6±0.5 ■ Absolute Maximum Ratings 5° 5.5±0.3 ● 2.0 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 3.3±0.3 0.7±0.1 ● 3.0±0.3 φ3.2±0.1 4.5 ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Parameter Conditions min typ VCB = 1000V, IE = 0 max Unit 50 µA Collector cutoff current ICBO VCB = 1500V, IE = 0 1 mA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA Forward current transfer ratio hFE VCE = 5V, IC = 7.5A Collector to emitter saturation voltage VCE(sat) IC = 7.5A, IB = 1.88A Base to emitter saturation voltage VBE(sat) IC = 7.5A, IB = 1.88A Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg Fall time tf IC = 7.5A, IB1 = 1.88A, IB2 = –3.76A 5 12 3 1.5 3 V V MHz 2.7 µs 0.2 µs 1 Power Transistors 2SC5440 PC — Ta VCE(sat) — IC 80 70 (1) 60 100 25˚C TC=100˚C 4000 40 2000 30 20 1000 (2) 10 (3) 0 0 20 40 60 80 100 120 140 160 0 0.1 Ambient temperature Ta (˚C) Area of safe operation (ASO) 10 100 Area of safe operation, horizontal operation ASO 30 10ms 1ms Collector current IC (A) IC 10 DC 1 VCEO max. 0.1 0.01 Non repetitive pulse TC=25˚C 0.001 1 3 f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. t=100µs 10 30 25 20 15 10 5 <1mA 0 100 300 1000 Collector to emitter voltage VCE (V) 0 500 1000 1500 TC=100˚C 25˚C 10 1 0.001 –25˚C 0.01 0.1 1 10 Collector current IC (A) 35 ICP Collector current IC (A) 1 Collector current IC (A) 100 2 –25˚C 3000 50 VCE=5V IC/IB=4 Forward current transfer ratio hFE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink 90 hFE — IC 5000 Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) 100 2000 Collector to emitter voltage VCE (V) 100