Power Transistors 2SC5441, 2SC5441A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP 20 A Collector current IC 15 A Base current IB 8 A Collector power TC=25°C Ta=25°C dissipation 100 PC Junction temperature Tj Storage temperature Tstg 3.5 ■ Electrical Characteristics 2SC5441 current 2SC5441A 10.0 23.4 22.0±0.5 26.5±0.5 2.0 1.2 5.45±0.3 5° 0.7±0.1 5.45±0.3 5° 1 2 3 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package W 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Parameter Collector cutoff 2.0 (TC=25˚C) 5° 5° 5° 4.0 2.0±0.2 1.1±0.1 18.6±0.5 ■ Absolute Maximum Ratings 5° 5.5±0.3 ● 2.0 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 3.3±0.3 0.7±0.1 ● 3.0±0.3 φ3.2±0.1 4.5 ■ Features ICBO Conditions min typ VCB = 1000V, IE = 0 max Unit 50 µA VCB = 1500V, IE = 0 1 mA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA Forward current transfer ratio hFE VCE = 5V, IC = 7.5A Collector to emitter saturation voltage VCE(sat) IC = 7.5A, IB = 1.88A Base to emitter saturation voltage VBE(sat) IC = 7.5A, IB = 1.88A Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg Fall time tf IC = 7.5A, IB1 = 1.88A, IB2 = –3.76A 5 12 3 1.5 3 V V MHz 3.0 µs 0.2 µs 1 Power Transistors 2SC5441, 2SC5441A PC — Ta VCE(sat) — IC 200 150 100 25˚C TC=100˚C 4000 –25˚C 3000 (1) 100 2000 50 1000 (2) 20 40 60 80 100 120 140 160 0 0.1 Ambient temperature Ta (˚C) 1 Area of safe operation (ASO) f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. t=100µs 1ms Collector current IC (A) 10ms IC DC 1 0.1 20 15 10 5 0.01 0.001 <1mA 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 0 500 1000 1500 VCE=5V TC=100˚C 25˚C 10 –25˚C 1 0.001 0.01 0.1 1 10 Collector current IC (A) Area of safe operation, horizontal operation ASO 25 10 100 Collector current IC (A) 100 ICP 10 2SC5441 2SC5441A (3) 0 Collector current IC (A) IC/IB=4 Forward current transfer ratio hFE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (PC=12W) (3) Without heat sink (PC=3.5W) 0 2 hFE — IC 5000 Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) 250 2000 Collector to emitter voltage VCE (V) 100