Horizontal Deflection Output Transistor 2SC5572 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12*3 A Collector current IC 6 A Base current IB 3 A Collector power dissipation PC 40*1 3*2 W Junction temperature Tj 150 °C -55 to +150 °C Storage temperature 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1500 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter to base voltage VEBO IE=500mA,IC=0 7 - - V Forward current transfer ratio fFE VCE=5V,IC=4A 5 - 9 Collector to emitter saturation voltage VCE(sat) IC=4A,IB=0.8A - - 3 V Base to emitter saturation voltage VBE(sat) IC=4A,IB=0.8A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Storage time Tstg IC=4A,IB1=0.8A,IB2=-1.6A - - 5.0 µs Fall time Tf IC=4A,IB1=0.8A,IB2=-1.6A - - 0.5 µs Diode characteristics VF IF=4A - - -2 V Collector cutoff current