New Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced features contribute to higher performing, more reliable home-use TVs that cost less. ■ Features ● Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V ● Low loss:VCE(sat)<3V ● Broad area of safe-operation. ■ Spacifications Parameter Package Electric Characteristics Now Compact packaging Ic (A) 2SC5657 TOP-3E Possible 4 2SC5622/2SC5572 TOP-3E/3D Possible 6 Part No. VCBO (V) Damper diode Recommended condition fH (kHz) Screen size (inch) to 14 Built-in 15.75 1500 2SC5518/2SC5523 TOP-3E/3D Possible 7 2SC5514/2SC5521 TOP-3E/3D Possible 13 2SC5517/2SC5522 TOP-3E/3D Possible 6 2SC5519/2SC5524 TOP-3E/3D Possible 2SC5516/2SC5584 TOP-3E/3L 20 2SC5546 TOP-3E 18 2SC5553/2SC5597 TOP-3E/3L 22 2SC5591/2SC5591A TOP-3E 20 1700/1800 2SC5686 TOP-3E 20 2000 1600/1700 to 25 to 29 Not built-in 32 Built-in 15.75 to 32 to 29 to 36 8 1500 1700 32 to 36 64 to 36 Not built-in ■ Applications ●TVs ●Wide-screen TVs ●Digital TVs ¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements. Semiconductor Company, Matsushita Electronics Corporation 1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan E00065BE Tel. (075) 951-8151 http://www.mec.panasonic.co.jp New publication, effective from Sep 12 2000. Horizontal Deflection Output Transistor 2SC5514 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V *3 Peak collector current ICP 23 A Collector current IC 13 A Base current IB 6 A Collector power dissipation PC 50*1 3.0*2 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1500 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter cutoff current IEBO VEB=7V,IC=0 - - 50 µA Forward current transfer ratio fFE VCE=5V,IC=6.5A 5 - 9 Collector to emitter saturation voltage VCE(sat) IC=6.5A,IB=1.63A - - 3 V Base to emitter saturation voltage VBE(sat) IC=6.5A,IB=1.63A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Fall time Tf IC=6.5A,IB1=1.63A,IB2=-3.25A - - 0.2 µs Storage time Tstg IC=6.5A,IB1=1.63A,IB2=-3.25A - - 2.7 µs Collector cutoff current Horizontal Deflection Output Transistor 2SC5516 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30*3 A Collector current IC 20 A Base current IB 8 A Collector power dissipation PC 70*1 3.5*2 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1500 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter cutoff current IEBO VEB=7V,IC=0 - - 50 µA Forward current transfer ratio fFE VCE=5V,IC=10A 7 - 14 Collector to emitter saturation voltage VCE(sat) IC=10A,IB=2.5A - - 3 V Base to emitter saturation voltage VBE(sat) IC=10A,IB=2.5A - - 1.5 V Transition frequency fT VCE=10V,IC=0A,f=0.5MHz - 3 - MHz Fall time Tf IC=10A,IB1=2.5A,IB2=-5.0A - - 0.2 µs Storage time Tstg IC=10A,IB1=2.5A,IB2=-5.0A - - 2.7 µs Collector cutoff current Horizontal Deflection Output Transistor 2SC5517 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 20 A Collector current IC 6 A Base current IB 3 A Collector power dissipation PC 40*1 3*2 W Junction temperature Tj 130 °C Storage temperature Tstg -55 to +150 °C 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1600 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C ,*2)Ta=25°°C(Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C ) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1600V,IE=0 - - 1 mA Emitter to base voltage VEBO IE=500mA,IC=0 7 - - V Forward current transfer ratio fFE VCE=5V,IC=1A 7 - 20 Forward current transfer ratio fFE VCE=5V,IC=4A 4.5 - 8 Collector to emitter saturation voltage VCE(sat) IC=4A,IB=0.8A - - 3 V Base to emitter saturation voltage VBE(sat) IC=4A,IB=0.8A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Storage time Tstg IC=4.5A,IB1=0.9A,IB2=-1.8A 0.3 - 0.5 µs Fall time Tf IC=4.5A,IB1=0.9A,IB2=-1.8A 3.8 - 5 µs Diode characteristics VF IF=4A - - -2 V Collector cutoff current Horizontal Deflection Output Transistor 2SC5518 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 5 V Peak collector current ICP 14*3 A Collector current IC 7 A Base current IB 3.5 A Collector power dissipation PC 40*1 3*2 W Junction temperature Tj 150 °C -55 to +150 °C Storage temperature 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1500 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C ) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter to base voltage VEBO IE=500mA,IC=0 5 - - V Forward current transfer ratio fFE VCE=5V,IC=5A 5 - 9 Collector to emitter saturation voltage VCE(sat) IC=5A,IB=1A - - 3 V Base to emitter saturation voltage VBE(sat) IC=5A,IB=1A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Storage time Tstg IC=5A,IB1=1A,IB2=2A - - 0.5 µs Fall time Tf IC=5A,IB1=1A,IB2=2A - - 5 µs Diode characteristics VF IF=5A - - -2 V Collector cutoff current Horizontal Deflection Output Transistor 2SC5519 ■ Absolute Maximum Ratings Unit:mm VCES 1700 V Emitter to base voltage VEBO 5 V Peak collector current ICP 16*3 A Collector current IC 8 A Base current IB 3 A Collector power dissipation PC 50*1 3*2 W Junction temperature Tj 150 °C -55 to +150 °C Storage temperature 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 5.45±0.3 5° 23.4 22.0±0.5 Collector to emitter voltage 26.5±0.5 V 18.6±0.5 1700 10.0 VCBO 3.0±0.3 φ3.2±0.1 2.0 1.2 Collector to base voltage 15.5±0.5 2.0 Unit 5° 1 2 3 2.0 Rating 4.5 Symbol 3.3±0.3 0.7±0.1 Parameter TOP-3E *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1700V,IE=0 - - 1 mA Emitter to base voltage VEBO IE=500mA,IC=0 5 - - V Forward current transfer ratio fFE VCE=5V,IC=6A 5 - 10 Collector to emitter saturation voltage VCE(sat) IC=6A,IB=1.2A - - 3 V Base to emitter saturation voltage VBE(sat) IC=6A,IB=1.2A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Storage time Tstg IC=6A,IB1=1.2A,IB2=-2.4A - - 5.0 µs Fall time Tf IC=6A,IB1=1.2A,IB2=-2.4A - - 0.5 µs Diode characteristics VF IF=6A - - -2 V Collector cutoff current Horizontal Deflection Output Transistor 2SC5572 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12*3 A Collector current IC 6 A Base current IB 3 A Collector power dissipation PC 40*1 3*2 W Junction temperature Tj 150 °C -55 to +150 °C Storage temperature 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1500 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter to base voltage VEBO IE=500mA,IC=0 7 - - V Forward current transfer ratio fFE VCE=5V,IC=4A 5 - 9 Collector to emitter saturation voltage VCE(sat) IC=4A,IB=0.8A - - 3 V Base to emitter saturation voltage VBE(sat) IC=4A,IB=0.8A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Storage time Tstg IC=4A,IB1=0.8A,IB2=-1.6A - - 5.0 µs Fall time Tf IC=4A,IB1=0.8A,IB2=-1.6A - - 0.5 µs Diode characteristics VF IF=4A - - -2 V Collector cutoff current Horizontal Deflection Output Transistor 2SC5584 ■ Absolute Maximum Ratings Unit:mm Parameter Symbol Rating Unit Collector to base voltage VCBO 1500 V Collector to emitter voltage VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30*3 A Collector current IC 20 A Base current IB φ 3.3±0.2 5.0±0.3 3.0 8 2.0 2.0 10.0 1.5 2.0±0.3 Solder Dip 20.0±0.5 2.5 1.5 26.0±0.5 4.0 6.0 3.0 20.0±0.5 1.5 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 A 10.9±0.5 *1 Collector power dissipation PC 150 3.5*2 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C 1 2 3 TOP-3L *1)TC=25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter cutoff current IEBO VEB=7V,IC=0 - - 50 µA Forward current transfer ratio fFE VCE=5V,IC=10A 7 - 14 Collector to emitter saturation voltage VCE(sat) IC=10A,IB=2.5A - - 3 V Base to emitter saturation voltage VBE(sat) IC=10A,IB=2.5A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Fall time Tf IC=10A,IB1=2.5A,IB2=-5.0A - - 0.2 µs Storage time Tstg IC=10A,IB1=2.5A,IB2=-5.0A - - 2.7 µs Collector cutoff current Horizontal Deflection Output Transistor 2SC5591 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30*3 A Collector current IC 20 A Base current IB 11 A Collector power dissipation PC 70*1 3.5*2 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 1700 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1700V,IE=0 - - 1 mA Emitter cutoff current IEBO VEB=7V,IC=0 - - 50 µA Forward current transfer ratio fFE VCE=5V,IC=10A 7 - 14 Collector to emitter saturation voltage VCE(sat) IC=10A,IB=2.5A - - 3 V Base to emitter saturation voltage VBE(sat) IC=10A,IB=2.5A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Fall time Tf IC=10A,IB1=2.5A,IB2=-5.0A - - 0.2 µs Storage time Tstg IC=10A,IB1=2.5A,IB2=-5.0A - - 3.0 µs Collector cutoff current Horizontal Deflection Output Transistor 2SC5657 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8*3 A Collector current IC 4 A Base current IB 2 A Collector power dissipation PC 40*1 3*2 W Junction temperature Tj 150 °C -55 to +150 °C Storage temperature 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 10.0 1500 26.5±0.5 VCBO 3.0±0.3 φ3.2±0.1 2.0 1.2 Collector to base voltage 15.5±0.5 2.0 Unit 18.6±0.5 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=1500V,IE=0 - - 1 mA Emitter to base voltage VEBO IE=500mA,IC=0 7 - - V Forward current transfer ratio fFE VCE=5V,IC=2A 5 - 9 Collector to emitter saturation voltage VCE(sat) IC=2A,IB=0.5A - - 5 V Base to emitter saturation voltage VBE(sat) IC=2A,IB=0.5A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Storage time Tstg IC=2A,IB1=0.4A,IB2=-0.8A - - 5.0 µs Fall time Tf IC=2A,IB1=0.4A,IB2=-0.8A - - 0.5 µs Diode characteristics VF - - -2 V Collector cutoff current Horizontal Deflection Output Transistor 2SC5686 ■ Absolute Maximum Ratings Unit:mm Collector to emitter voltage VCES 2000 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V *3 Peak collector current ICP 30 A Collector current IC 20 A Base current IB 11 A Collector power dissipation PC 70*1 3.5*2 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5° 0.7±0.1 5.45±0.3 5.5±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5° 23.4 22.0±0.5 V 26.5±0.5 2000 18.6±0.5 VCBO 3.0±0.3 φ3.2±0.1 10.0 Collector to base voltage 15.5±0.5 2.0 1.2 Unit 2.0 Rating 5° 1 2 3 2.0 Symbol 4.5 Parameter TOP-3E *1)TC=25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. ■ Electrical Characteristics(TC=25°C) Parameter Symbol Conditions min typ max Unit ICBO VCB=1000V,IE=0 - - 50 µA ICBO VCB=2000V,IE=0 - - 1 mA Emitter cutoff current IEBO VEB=7V,IC=0 - - 50 µA Forward current transfer ratio fFE VCE=5V,IC=10A 7 - 14 Collector to emitter saturation voltage VCE(sat) IC=10A,IB=2.5A - - 3 V Base to emitter saturation voltage VBE(sat) IC=10A,IB=2.5A - - 1.5 V Transition frequency fT VCE=10V,IC=0.1A,f=0.5MHz - 3 - MHz Fall time Tf IC=10A,IB1=2.5A,IB2=-5.0A - - 0.2 µs Storage time Tstg IC=10A,IB1=2.5A,IB2=-5.0A - - 3.0 µs Collector cutoff current