Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 5 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +155 ˚C (TC=25˚C) Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 3V, IC = 0 hFE1 VCE = 5V, IC = 20mA 20 hFE2* VCE = 5V, IC = 1A 60 hFE3 VCE = 5V, IC = 3A 20 Forward current transfer ratio 2.7±0.2 4.0 ● 14.0±0.5 ● Extremely satisfactory linearity of the forward current transfer ratio hFE Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 typ VCB = 100V, IE = 0 max Unit 50 µA 50 µA 200 Base to emitter voltage VBE VCE = 5V, IC = 3A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.3A 2.0 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, f = 1MHz 90 pF *h FE2 Rank classification Rank Q P hFE2 60 to 120 100 to 200 1 Power Transistors 2SD1499 PC — Ta IC — VCE IC — VBE 10 50 (1) 40 VCE=5V 7 30 20 25˚C 8 Collector current IC (A) 60 8 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 Collector current IC (A) Collector power dissipation PC (W) 80 IB=100mA 6 80mA 60mA 4 40mA 20mA 2 (2) 10 6 –25˚C TC=100˚C 5 4 3 2 1 10mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 6 8 0 3000 Transition frequency fT (MHz) 1 25˚C TC=100˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 TC=100˚C 300 100 –25˚C 30 10 3 0.1 0.3 1 10 ICP t=1ms 3 10ms 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 1000 (V) VCE=5V f=1MHz TC=25˚C 300 100 30 10 3 1 0.1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C IC 3 Collector current IC (A) 102 2.0 0.3 1 0.01 0.03 10 25˚C Area of safe operation (ASO) 30 1.6 fT — IC 1000 3 1.2 VCE=5V Forward current transfer ratio hFE 10 0.8 1000 IC/IB=10 30 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 12 10000 100 Collector current IC (A) 2 10 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 10 (2) 1 10–1 10–2 10–3 10–2 10–1 1 10 Time t (s) 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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