ETC 2SD1499Q

Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
Unit: mm
●
0.7±0.1
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
8
A
Collector current
IC
5
A
Collector power TC=25°C
dissipation
40
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
4.2±0.2
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2
150
˚C
–55 to +155
˚C
(TC=25˚C)
Symbol
Conditions
min
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
VEB = 3V, IC = 0
hFE1
VCE = 5V, IC = 20mA
20
hFE2*
VCE = 5V, IC = 1A
60
hFE3
VCE = 5V, IC = 3A
20
Forward current transfer ratio
2.7±0.2
4.0
●
14.0±0.5
●
Extremely satisfactory linearity of the forward current transfer
ratio hFE
Wide area of safe operation (ASO)
High transition frequency fT
Full-pack package which can be installed to the heat sink with
one screw
4.2±0.2
5.5±0.2
Solder Dip
■ Features
●
10.0±0.2
typ
VCB = 100V, IE = 0
max
Unit
50
µA
50
µA
200
Base to emitter voltage
VBE
VCE = 5V, IC = 3A
1.8
V
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.3A
2.0
V
Transition frequency
fT
VCE = 5V, IC = 0.5A, f = 1MHz
20
MHz
Collector output capacitance
Cob
VCB = 10V, f = 1MHz
90
pF
*h
FE2
Rank classification
Rank
Q
P
hFE2
60 to 120
100 to 200
1
Power Transistors
2SD1499
PC — Ta
IC — VCE
IC — VBE
10
50
(1)
40
VCE=5V
7
30
20
25˚C
8
Collector current IC (A)
60
8
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
70
Collector current IC (A)
Collector power dissipation PC (W)
80
IB=100mA
6
80mA
60mA
4
40mA
20mA
2
(2)
10
6
–25˚C
TC=100˚C
5
4
3
2
1
10mA
(3)
0
0
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
2
6
8
0
3000
Transition frequency fT (MHz)
1
25˚C
TC=100˚C
0.1
–25˚C
0.03
0.01
0.01 0.03
0.1
0.3
1
3
TC=100˚C
300
100
–25˚C
30
10
3
0.1
0.3
1
10 ICP
t=1ms
3
10ms
1
DC
0.3
0.1
0.03
0.01
1
3
10
30
100
300
Collector to emitter voltage VCE
1000
(V)
VCE=5V
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1
0.01 0.03
10
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
IC
3
Collector current IC (A)
102
2.0
0.3
1
0.01 0.03
10
25˚C
Area of safe operation (ASO)
30
1.6
fT — IC
1000
3
1.2
VCE=5V
Forward current transfer ratio hFE
10
0.8
1000
IC/IB=10
30
0.3
0.4
Base to emitter voltage VBE (V)
hFE — IC
100
Collector current IC (A)
12
10000
100
Collector current IC (A)
2
10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
4
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
10
(2)
1
10–1
10–2
10–3
10–2
10–1
1
10
Time t (s)
102
103
104
10
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2001 MAR