Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ● ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage VEBO 5 V Collector current IC 8 A Peak collector current ICP* 20 A Peak base current IBP 5 A Reverse peak base current IBP –4.5 A dissipation Ta=25°C Tj Storage temperature Tstg *Non-repetitive 100 PC Junction temperature 3 10.0 ˚C –55 to +150 ˚C 0.7±0.1 2.0 5.45±0.3 5° 1 2 3 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package Internal Connection C B E W 150 23.4 22.0±0.5 2.0 1.2 (TC=25˚C) Parameter Collector power TC=25°C 5.45±0.3 5° 18.6±0.5 ● 5° 5° 4.0 2.0±0.2 1.1±0.1 5° 5.5±0.3 ● Incorporating a built-in damper diode High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 2.0 ● 3.3±0.3 0.7±0.1 ● 5° 26.5±0.5 ■ Features 3.0±0.3 φ3.2±0.1 4.5 15.5±0.5 peak ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit VCB = 1000V, IE = 0 50 µA VCB = 1700V, IE = 0 1 mA Collector cutoff current ICBO Emitter to base voltage VEBO IE = 500mA, IC = 0 5 Forward current transfer ratio hFE VCE = 5V, IC = 6A 4 Collector to emitter saturation voltage VCE(sat) IC = 6A, IB = 2A 3 V Base to emitter saturation voltage VBE(sat) IC = 6A, IB = 2A 1.5 V Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg Fall time tf Diode forward voltage VF IC = 6A, IBend = 2A, Lleak = 5µH IC = 8A, IB = 0 V 10 3 MHz 12 µs 0.8 µs –2 V 1 Power Transistors 2SD2524 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (1) (PC=3.0W) 110 100 90 TC=25˚C 80 70 60 50 40 30 IB=1000mA 6 800mA 5 600mA 4 400mA 3 200mA 2 20 1 (2) 10 (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 VBE(sat) — IC hFE — IC TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 TC=–25˚C 100˚C 25˚C 0.1 0.03 1 3 10 30 100 f=15.75kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation 20 Collector current IC (A) Forward current transfer ratio hFE 3 0.3 22 300 100 30 TC=100˚C 25˚C 10 –25˚C 3 1 18 16 14 12 10 8 6 4 0.3 2 <1mA 0.3 1 3 10 30 0.1 0.01 0.03 100 Collector current IC (A) 0 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t 103 Thermal resistance Rth(t) (˚C/W) 3 Area of safe operation, horizontal operation ASO VCE=5V 10 0.01 0.1 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 2 10 24 IC/IB=2 0.3 IC/IB=2 30 Collector current IC (A) 1000 30 1 12 100 Collector to emitter voltage VCE (V) 100 Base to emitter saturation voltage VBE(sat) (V) VCE(sat) — IC 7 Collector current IC (A) Collector power dissipation PC (W) IC — VCE 8 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 120 10 102 103 104 10 0 400 800 1200 1600 2000 Collector to emitter voltage VCE (V)