Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage VEBO 5 V Peak collector current ICP 12 A Collector current IC 6 A Base current IB 3 A Collector power TC=25°C Ta=25°C dissipation 40 PC Junction temperature Tj Storage temperature Tstg 10.0 23.4 22.0±0.5 26.5±0.5 2.0 1.2 5.45±0.3 5° 0.7±0.1 5.45±0.3 5° 1 2 3 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package W 3 ■ Electrical Characteristics 2.0 (TC=25˚C) 5° 5° 5° 4.0 2.0±0.2 1.1±0.1 18.6±0.5 ■ Absolute Maximum Ratings 5° 5.5±0.3 ● 2.0 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 3.3±0.3 0.7±0.1 ● 3.0±0.3 φ3.2±0.1 4.5 ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit VCB = 1000V, IE = 0 50 µA VCB = 1700V, IE = 0 1 mA Collector cutoff current ICBO Emitter to base voltage VEBO IE = 500mA, IC = 0 5 Forward current transfer ratio hFE VCE = 5V, IC = 4.5A 5 Collector to emitter saturation voltage VCE(sat) IC = 4.5A, IB = 0.9A 3 V Base to emitter saturation voltage VBE(sat) IC = 4.5A, IB = 0.9A 1.5 V Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg Fall time tf Diode forward voltage VF IC = 4.5A, IB1 = 0.9A, IB2 = –1.8A IF = 4.5A V 10 3 MHz 5.0 µs 0.5 µs –2 V 1 Power Transistors 2SC5517 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink 90 80 70 60 50 (1) 40 30 f=15.75kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. 15 10 5 20 (2) 10 (3) 0 <1mA 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 Area of safe operation, horizontal operation ASO 20 Collector current IC (A) Collector power dissipation PC (W) 100 0 500 1000 1500 2000 Collector to emitter voltage VCE (V)