Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Collector to 2SC5294 base voltage 2SC5294A Collector to 2SC5294 base voltage 2SC5294A Ratings 1500 VCBO 1600 1500 VCES 1600 Emitter to base voltage VEBO 5 V Peak collector current ICP 30 A Collector current IC 20 A Base current IB 10 A PC Junction temperature Tj Storage temperature Tstg 3.5 ■ Electrical Characteristics current 2SC5294 10.0 2 3 23.4 22.0±0.5 26.5±0.5 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package W 150 ˚C –55 to +150 ˚C Symbol 2SC5294 2SC5294A 5° (TC=25˚C) Parameter Collector cutoff 5.45±0.3 1 V Ta=25°C 0.7±0.1 V 600 dissipation 2.0 1.2 5.45±0.3 V VCEO 120 5° Unit Collector to emitter voltage Collector power TC=25°C 2.0 (Ta=25˚C) 5° 5° 5° 4.0 2.0±0.2 1.1±0.1 18.6±0.5 ■ Absolute Maximum Ratings 5° 5.5±0.3 ● 2.0 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 3.3±0.3 0.7±0.1 ● 3.0±0.3 φ3.2±0.1 4.5 ■ Features Conditions min typ 50 VCB = 1000V, IE = 0 ICBO 2SC5294A max 50 VCB = 1500V, IE = 0 1 VCB = 1600V, IE = 0 1 50 Emitter cutoff current IEBO VEB = 5V, IC = 0 Forward current transfer ratio hFE VCE = 5V, IC = 10A Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 2.8A Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 2.8A Transition frequency fT VCE = 10V Storage time tstg Fall time tf IC = 12A, IB1 = 2.4A, IB2 = –4.8A 5 Unit µA mA µA 12 3 1.5 3 V V MHz 1.5 2.5 µs 0.12 0.2 µs 1 Power Transistors 2SC5294, 2SC5294A Area of safe operation (ASO) 150 (1) 100 50 10ms IC 10 f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. t=100µs 1ms Collector current IC (A) 200 ICP Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (PC=12W) (3) Without heat sink (PC=3.5W) DC 1 0.1 40 30 20 10 0.01 (3) Non repetitive pulse TC=25˚C (2) 0 0.001 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 Area of safe operation, horizontal operation ASO 50 100 1 3 10 30 <1mA 2SC5294 2SC5294A PC — Ta 250 0 100 300 1000 Collector to emitter voltage VCE (V) 0 500 1000 1500 2000 Collector to emitter voltage VCE (V)