ETC 2SK2325

Power F-MOS FETs
2SK2325
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
unit: mm
4.6±0.2
+0.5
13.7–0.2
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Unit
Drain to Source breakdown voltage
VDSS
600
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±3
A
Pulse
IDP
±6
A
22.5
mJ
Drain current
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
EAS*
40
PD
3.0±0.2
15.0±0.3
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
2.9±0.2
4.1±0.2 8.0±0.2
Solder Dip
φ3.2±0.1
■ Applications
9.9±0.3
2.6±0.1
1.2±0.15
1.45±0.15
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7
1 2 3
1: Gate
2: Drain
3: Source
TO-220E Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 3A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 480V, VGS = 0
100
µA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 2A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 2A
Diode forward voltage
VDSF
IDR = 3A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
600
V
2
1.7
1.5
5
V
2.5
Ω
2.5
S
−1.5
V
750
pF
80
pF
25
pF
Turn-on time (delay time)
td(on)
15
ns
Rise time
tr
VDD = 200V, ID = 2A
25
ns
Fall time
tf
VGS = 10V, RL = 100Ω
40
ns
Turn-off time (delay time)
td(off)
90
ns
Thermal resistance between channel and case
Rth(ch-c)
3.125
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
62.5
°C/W
1
Power F-MOS FETs
2SK2325
PD  Ta
Area of safe operation (ASO)
Drain current ID (A)
Allowable power dissipation PD (W)
ID
3
t=100µs
1
1ms
10ms
0.3
10
50
Non repetitive pulse
TC=25˚C
IDP
100ms
DC
0.1
(1) TC=Ta
(2) Without heat sink
(PD=2W)
Avalanche current IAS (A)
10
IAS  L-load
40
30
(1)
20
10
TC=25˚C
3
22.5mJ
1
0.3
0.1
(2)
0
10
30
100
300
1000
0
Drain to source voltage VDS (V)
40
20
ID  VDS
5V
2
40W
4
3
2
1
4.5V
TC=125˚C
85˚C
4V
0
0˚C
25˚C
0
10
15
20
25
2
RDS(on)  ID
4
6
8
10
85˚C
3
25˚C
0˚C
1
0
3
4
ID=3A
5
2A
1A
VDS=25V
5
Drain current ID (A)
6
5
TC=0˚C
25˚C
4
85˚C
125˚C
2
1
0
1
2
3
10
15
20
25
30
4
5
Drain current ID (A)
f=1MHz
TC=25˚C
1000
6
3
5
Gate to source voltage VGS (V)
Ciss, Coss, Crss  VDS
0
2
10
0
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
TC=125˚C
Forward transfer admittance |Yfs| (S)
5
1
15
| Yfs |  ID
VGS=10V
0
20
12
7
2
25
Gate to source voltage VGS (V)
6
4
30
0
0
Drain to source voltage VDS (V)
10
TC=25˚C
Drain to source voltage VDS (V)
Drain current ID (A)
VGS=10V
3
5
3
VDS=25V
5.5V
1
1
VDS  VGS
5
4
0
0.3
L-load (mH)
35
TC=25˚C
6V 7V
Drain current ID (A)
0.1
6
5
Drain to source ON-resistance RDS(on) (Ω)
80 100 120 140 160
ID  VGS
6
2
60
Ambient temperature Ta (˚C)
6
Ciss
300
100
Coss
30
Crss
10
0
20
40
60
80
100
Drain to source voltage VDS (V)
Power F-MOS FETs
2SK2325
td(on), tr, tf, td(off)  ID
14
300
12
250
10
VDS=100V
VDS
200
8
200V
150
6
VGS
100
4
50
2
0
0
0
5
10
15
20
25
Gate charge amount Qg (nC)
150
Switching time td(on),tr,tf,td(off) (ns)
400
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
VDS, VGS  Qg
VDD=200V
VGS=10V
TC=25˚C
125
100
td(off)
75
50
tf
tr
25
td(on)
0
0
1
2
3
4
5
Drain current ID (A)
3