DISCRETE POWER AND SIGNAL TECHNOLOGIES BAT54/A/C/S 3 CONNECTION DIAGRAMS PACKAGE BAT54 L4P SOT-23 TO-236AB (Low) 1 2 3 2 NC 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 3 BAT54C 2 1 3 3 2 1 BAT54A BAT54S 1 2 Schottky Barrier Diode Sourced from Process KA Absolute Maximum Ratings* Sym Tstg TJ Wiv IF if iF(surge) PD TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature Working Inverse Voltage DC Forward Current (IF) Recurrent Peak Forward Current (IFRM) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 Second Total Power Dissipation at 25OC Theta (Rth j-a) (Note 1) Value Units -55 to +150 +150 25 200 300 600 230 430 OC OC V mA mA mA mW OK/W *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) From junction to ambient mounted on a ceramic substrate of 10 mm x 8 mm x 0.6 mm Electrical Characteristics SYM TA = 25OC unless otherwise noted CHARACTERISTICS BV Breakdown Voltage IR Reverse Leakage VF Forward Voltage CT TRR MIN MAX TEST CONDITIONS V IR 2.0 uA VR = 240 320 400 500 1.0 mV mV mV mV V IF IF IF IF IF Capacitance 10 pF VR = f = Reverse Recovery Time 5.0 ns IF= IR = 10 mA IRR = 1.0 mA RL = 100 Ohms © 1997 Fairchild Semiconductor Corporation 30 UNITS = 10 uA 25 V = 100 uA = 1.0 mA = 10 mA = 30 mA = 100 mA 1.0 V 1.0 MHz 0.01 o -25 C 0.001 o 25 C o 0.0001 75 C o 100 C 0.00001 0.000001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 V F - FORWARD VOLTAGE (V) Reverse Leakage Current vs. Temperature 1 125oC 0.1 100oC 75oC 0.01 0.001 25oC 0.0001 0.00001 0 5 10 15 20 25 V R - REVERSE VOLTAGE (V) Capacitance vs. Reverse Bias Voltage 16 14 CAPACITANCE (pF) I F - FORWARD CURRENT (A) 0.2 0.1 I R - REVERSE LEAKAGE CURRENT (mA) BAT54 Forward Voltage vs. Temperature 12 10 8 6 4 2 0 1 2 3 4 5 6 7 8 9 V R - REVERSE BIAS VOLTAGE (V) 10 30 DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.019 (0.483) 0.015 (0.381) 3 0.098 (2.489) 0.083 (2.108) 0.055 (1.397) 0.047 (1.194) 3 CHARACTERS MAX 1 2 0.024 (0.810) 0.018 (0.457) 0.040 (1.016) 0.035 (0.889) 0.080 (2.032) 0.070 (1.778) 0.120 (3.048) 0.110 (2.794) LOW PROFILE 0.041 (1.041) (49) 0.035 (0.889) 0.0059 (0.150) 0.0035 (0.089) LOW PROFILE 0.0040 (0.102) (49) 0.0005 (0.013) SOT-23 TO-236AB (LOW PROFILE) 22-August-1994 DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.030” +/- 0.005” (0.762 +/- 0.127) 0.120” MINIMUM (3.048) 0.035” TYPICAL (0.889) 0.060” +/- 0.005” (1.524 +/- 0.127) RECOMMENDED SOLDER PADS FOR SOT-23 DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.031” +/- 0.005” (0.800 +/- 0.127) 0.039” +/- 0.005” (1.000 +/- 0.127) 0.099” +/- 0.005” (2.524 +/- 0.127 ) 0.060” +/- 0.005” (1.524 +/- 0.127) 0.037” +/- 0.005” (0.950 +/- 0.127 ) RECOMMENDED SOLDER PADS FOR U.S. & European SOT-23 & Japanese SC-59