To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AS OUTLINE DRAWING Dimensions in mm 6.5 ∗ 2.3 MIN 1.0 MAX 0.9 MAX 5.5±0.2 TYPE NAME 1.0 2.3 10 MAX 4 VOLTAGE CLASS 0.5±0.1 1.5±0.2 5.0±0.2 0.5±0.2 2.3 0.8 2.3 ∗ Measurement point of case temperature 1 2 3 24 • IT (RMS) ........................................................................ 5A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 30mA 1 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL MP-3 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=103°C✽3 ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation 3 W PG (AV) Average gate power dissipation 0.3 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg Storage temperature — Weight Typical value 5 A 50 A 10.4 A2s A –40 ~ +125 °C –40 ~ +125 °C 0.26 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=7A, Instantaneous measurement — — 1.8 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽3 — — 3.0 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°C 5 — — V/µs ✽4 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured on the T2 terminal. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–2.5A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 100 7 5 3 2 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 7 5 3 2 10–1 0.6 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 1.4 2.2 3.0 3.8 ON-STATE VOLTAGE (V) 4.6 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 VGM = 10V 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 PGM = 3W PGM = 0.3W IGM = 2A IFGT I IRGT I IRGT III 103 7 5 4 3 2 IRGT I 102 IFGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 8 160 7 140 6 360° CONDUCTION 5 RESISTIVE, INDUCTIVE 4 LOADS 3 2 1 0 IRGT III JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 0 TYPICAL EXAMPLE GATE CURRENT (mA) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 1 2 3 4 5 6 7 RMS ON-STATE CURRENT (A) 8 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 40 360° CONDUCTION 20 RESISTIVE, INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS 120 100 140 140 t2.3 80 80 t2.3 80 60 NATURAL 40 CONVECTION CURVES APPLY RESISTIVE 20 REGARDLESS OF INDUCTIVE, CONDUCTION ANGLE LOADS 0 0 8 1 2 3 4 5 6 7 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 VD = 12V DISTRIBUTION TYPICAL EXAMPLE 101 7 5 4 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 7 5 3 2 40 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE T2+, G+ TYPICAL T2– , G– EXAMPLE DISTRIBUTION T2+, G– TYPICAL EXAMPLE 101 7 5 3 2 100 100 (%) 103 7 5 3 2 80 RMS ON-STATE CURRENT (A) HOLDING CURRENT (mA) 105 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) 170 170 t2.3 MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE ALUMINUM 140 100 (%) AMBIENT TEMPERATURE (°C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 –60 –40 –20 0 20 40 60 80 100 120 140 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 III QUADRANT 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C COMMUTATION CHARACTERISTICS 7 5 4 3 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 MAIN VOLTAGE (dv/dt)c TIME VD I QUADRANT III QUADRANT 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω TYPICAL EXAMPLE IRGT III A 6V IRGT I 102 7 5 4 3 2 TEST PROCEDURE 1 IFGT I A 6V RG V V RG TEST PROCEDURE 2 6Ω A 6V 101 (di/dt)c TIME MINIMUM CHARACTERISTICS VALUE 100 7 0 10 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME MAIN CURRENT 101 7 5 4 3 2 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH SUPPLY VOLTAGE 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AS OUTLINE DRAWING Dimensions in mm 6.5 ∗ 2.3 MIN 1.0 MAX 0.9 MAX 5.5±0.2 TYPE NAME 1.0 2.3 10 MAX 4 VOLTAGE CLASS 0.5±0.1 1.5±0.2 5.0±0.2 0.5±0.2 2.3 0.8 2.3 ∗ Measurement point of case temperature 1 2 3 24 • IT (RMS) ........................................................................ 5A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 30mA 1 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL MP-3 APPLICATION Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=128°C✽3 ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation 3 W PG (AV) Average gate power dissipation 0.3 W VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg Storage temperature — Weight Typical value 5 A 50 A 10.4 A2s A –40 ~ +150 °C –40 ~ +150 °C 0.26 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=7A, Instantaneous measurement — — 1.8 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA 0.2/0.1 — — V IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C/150°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 — — 3.0 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°/150°C 5/1 — — V/µs ✽4 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured on the T2 terminal. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C/150°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–2.5A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 102 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 101 Tj = 150°C 7 5 3 2 100 7 5 3 2 10–1 0.5 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 PGM = 3W PGM = 0.3W IGM = 2A IFGT I IRGT I IRGT III 103 7 5 3 2 IRGT I 102 7 5 3 2 IFGT I 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 8 160 7 140 6 360° CONDUCTION 5 RESISTIVE, INDUCTIVE 4 LOADS 3 2 1 0 IRGT III JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 0 TYPICAL EXAMPLE GATE CURRENT (mA) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) VGD = 0.1V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 5 3 2 VGM = 10V GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 1 2 3 4 5 6 7 RMS ON-STATE CURRENT (A) 8 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 2 0 1 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE 100 80 80 t2.3 80 60 NATURAL 40 CONVECTION RESISTIVE CURVES APPLY 20 REGARDLESS OF INDUCTIVE, CONDUCTION ANGLE LOADS 0 1 2 3 4 5 6 7 0 8 AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE ALUMINUM 140 170 170 t2.3 120 140 140 t2.3 100 (%) AMBIENT TEMPERATURE (°C) The product guaranteed maximum junction temperature 150°C (See warning.) HOLDING CURRENT (mA) TYPICAL EXAMPLE 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 102 7 5 4 3 2 VD = 12V DISTRIBUTION TYPICAL EXAMPLE 101 7 5 4 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE T2+, G+ TYPICAL T2– , G– EXAMPLE DISTRIBUTION T2+, G– TYPICAL EXAMPLE 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) 0 HOLDING CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 7 5 3 2 20 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 104 102 40 RMS ON-STATE CURRENT (A) 7 5 3 2 7 5 3 2 60 RMS ON-STATE CURRENT (A) 105 103 80 0 106 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE 100 LOADS 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) 160 TYPICAL EXAMPLE Tj = 150°C 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 120 III QUADRANT 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) COMMUTATION CHARACTERISTICS (Tj = 125°C) COMMUTATION CHARACTERISTICS (Tj = 150°C) 7 5 3 2 SUPPLY VOLTAGE TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME (di/dt)c TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME VD 101 7 5 I QUADRANT MINIMUM CHARACTERISTICS VALUE 3 2 100 7 0 10 III QUADRANT 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) The product guaranteed maximum junction temperature 150°C (See warning.) 7 5 3 2 SUPPLY VOLTAGE TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c 101 7 5 (di/dt)c TIME TIME VD TYPICAL EXAMPLE Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT III QUADRANT 3 2 100 7 0 10 MINIMUM CHARACTERISTICS VALUE 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IRGT I 102 7 5 4 3 2 IFGT I 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µ s) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5AS MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω LOAD A 6V 6V RG V A V C1 RG R1 TEST PROCEDURE 1 C1 = 0.1~0.47µ F R1 = 47~100Ω 6Ω C0 R0 TEST PROCEDURE 2 C0 = 0.1µ F R0 = 100Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002