ON Semiconductor BFR30LT1 BFR31LT1 JFET Amplifiers N–Channel 2 SOURCE 3 3 GATE 1 1 DRAIN 2 CASE 318–08, STYLE 10 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Symbol Max Unit PD 225 mW 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Dissipation(1) Total Device TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit IGSS — 0.2 nAdc OFF CHARACTERISTICS Gate Reverse Current (VGS = 10 Vdc, VDS = 0) Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) — — 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS –0.7 — — — –3.0 –1.3 –4.0 –2.0 Vdc (ID = 50 Adc, VDS = 10 Vdc) 1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1 1 Publication Order Number: BFR30LT1/D BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit IDSS 4.0 1.0 10 5.0 mAdc 1.0 1.5 0.5 0.75 4.0 4.5 — — 40 20 25 15 ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 SMALL–SIGNAL CHARACTERISTICS yfs Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) BFR30 BFR31 BFR30 BFR31 (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 kHz) mAdc yos Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 Adc, VDS = 10 Vdc) BFR30 BFR31 Adc Input Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Ciss — — 5.0 4.0 pF Reverse Transfer Capacitance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 Adc, VDS = 10 Vdc, f = 1.0 MHz) Crss — — 1.5 1.5 pF http://onsemi.com 2 BFR30LT1 BFR31LT1 TYPICAL CHARACTERISTICS 14 VDS = 15 V VGS = 0 RS = 1 M 4 3 2 1 0 VDS = 15 V VGS = 0 f = 1 kHz 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5 10 8 6 4 2 0.01 0.1 1.0 f, FREQUENCY (kHz) 0 100 10 0.001 Figure 1. Noise Figure versus Frequency VGS(off) -1.2 V 1.2 VGS = 0 V 1.0 -0.2 V 0.8 0.6 -0.4 V 0.4 -0.6 V 0 0 0.8 VDS = 15 V 0.6 0.4 0 -1.2 25 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS(off) -1.2 V 1.0 0.2 -0.8 V -1.0 V 0.2 10 Figure 2. Noise Figure versus Source Resistance I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 1.2 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) Figure 3. Typical Drain Characteristics -0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 4. Common Source Transfer Characteristics http://onsemi.com 3 0 BFR30LT1 BFR31LT1 TYPICAL CHARACTERISTICS 5 VGS = 0 V VGS(off) -3.5 V 4 I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 5 VGS(off) -3.5 V 3 -1 V 2 -2 V 1 4 3 VDS = 15 V 2 1 -3 V 0 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 -5 25 Figure 5. Typical Drain Characteristics 10 VGS(off) -5.8 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) VGS = 0 V -1 V 6 -2 V 4 -3 V 2 0 -4 V -5 V 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 Figure 6. Common Source Transfer Characteristics 10 8 -3 -2 -1 -4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 8 6 VDS = 15 V 4 2 0 -7 25 VGS(off) -5.8 V Figure 7. Typical Drain Characteristics -6 -5 -4 -3 -2 VGS, GATE-SOURCE VOLTAGE (VOLTS) -1 Figure 8. Common Source Transfer Characteristics Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS. http://onsemi.com 4 0 BFR30LT1 BFR31LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 5 BFR30LT1 BFR31LT1 PACKAGE DIMENSIONS SOT–23 (TO–236AB) CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H K J STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE http://onsemi.com 6 DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BFR30LT1 BFR31LT1 Notes http://onsemi.com 7 BFR30LT1 BFR31LT1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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