BSS84LT1 Preferred Device Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. • Energy Efficient • Miniature SOT–23 Surface Mount Package Saves Board Space http://onsemi.com 130 mAMPS 50 VOLTS RDS(on) = 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 50 Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID IDM 130 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C RθJA 556 °C/W TL 260 °C Drain–to–Source Voltage Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds P–Channel 3 mA 1 2 MARKING DIAGRAM 3 SOT–23 CASE 318 STYLE 21 1 PD W 2 W = Work Week PIN ASSIGNMENT Drain 3 1 2 Source Gate ORDERING INFORMATION Device BSS84LT1 Package SOT–23 Shipping 3000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 2 1 Publication Order Number: BSS84LT1/D BSS84LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 50 – – Vdc – – – – – – 0.1 15 60 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) µAdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS – – ±60 µAdc Gate–Source Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 – 2.0 Vdc Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) rDS(on) – 5.0 10 Ohms |yfs| 50 – – mS (VDS = 5.0 Vdc) Ciss – 30 – pF Output Capacitance (VDS = 5.0 Vdc) Coss – 10 – Transfer Capacitance (VDG = 5.0 Vdc) Crss – 5.0 – td(on) – 2.5 – tr – 1.0 – td(off) – 16 – ON CHARACTERISTICS (Note 1.) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time (VDD = –15 15 Vdc, ID = –2.5 2.5 Adc, RL = 50 Ω) Turn–Off Delay Time Fall Time ns tf – 8.0 – QT – 6000 – pC IS – – 0.130 A Pulsed Current ISM – – 0.520 Forward Voltage (Note 2.) VSD – 2.5 – Gate Charge SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current V 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0.5 25°C VDS = 10 V 0.5 -55°C 150°C 0.4 3.25 V 0.4 0.35 0.3 0.3 3.0 V 0.25 0.2 0.2 2.75 V 0.15 0.1 0 VGS = 3.5 V TJ = 25°C 0.45 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 0.6 2.5 V 0.1 2.25 V 0.05 1 1.5 2 2.5 3 3.5 0 4 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics http://onsemi.com 2 9 10 BSS84LT1 9 VGS = 4.5 V 8 150°C 7 6 25°C 5 4 -55°C 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 7 150°C VGS = 10 V 6.5 6 5.5 5 4.5 4 25°C 3.5 3 -55°C 2.5 2 0.1 0 0.2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = 10 V ID = 0.52 A 1.4 VGS = 4.5 V ID = 0.13 A 1.2 1 0.8 0.6 -55 -5 45 95 8 6 5 4 2 1 0 145 ID = 0.5 A 3 0 1000 500 Figure 6. Gate Charge 1 TJ = 150°C 25°C -55°C 0.01 0.001 0 0.5 1500 QT, TOTAL GATE CHARGE (pC) Figure 5. On–Resistance Variation with Temperature 0.1 0.6 VDS = 40 V TJ = 25°C 7 TJ, JUNCTION TEMPERATURE (°C) I D , DIODE CURRENT (AMPS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 1.6 0.5 0.4 Figure 4. On–Resistance versus Drain Current Figure 3. On–Resistance versus Drain Current 1.8 0.3 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.0 1.5 2.0 2.5 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage http://onsemi.com 3 3.0 2000 BSS84LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 POWER DISSIPATION one can calculate the power dissipation of the device which in this case is 225 milliwatts. The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, SOLDERING PRECAUTIONS • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 4 BSS84LT1 PACKAGE DIMENSIONS SOT–23 (TO–236) CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BSS84LT1 Notes http://onsemi.com 6 BSS84LT1 Notes http://onsemi.com 7 BSS84LT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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