HITACHI 2SK741

2SK741
Silicon N-Channel MOS FET
Application
TO–220AB
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC
converter and motor driver
2
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
1
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
250
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
7
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
28
A
———————————————————————————————————————————
Body to drain diode reverse drain current
IDR
7
A
———————————————————————————————————————————
Channel dissipation
Pch**
50
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at TC = 25 °C
2SK741
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
250
µA
VDS = 200 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
2.0
—
4.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.40
0.55
Ω
ID = 4 A, VGS = 10 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
2.7
4.5
—
S
ID = 4 A, VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
820
—
pF
VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance
Coss
—
370
—
pF
f = 1 MHz
————————————————————————————————
Reverse transfer capacitance
Crss
—
115
—
pF
———————————————————————————————————————————
Turn-on delay time
td(on)
—
12
—
ns
————————————————————————————————
Rise time
tr
—
48
—
ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
————————————————————————————————
Turn-off delay time
td(off)
—
70
—
ns
————————————————————————————————
Fall time
tf
—
50
—
ns
———————————————————————————————————————————
Body to drain diode forward
voltage
VDF
—
1.2
—
V
IF = 7 A, VGS = 0
———————————————————————————————————————————
Body to drain diode reverse
recovery time
trr
—
400
—
ns
IF = 7 A, VGS = 0,
diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test
2SK741
Maximum Safe Operation Area
Power vs. Temperature Derating
100
s
20
m
Drain Current ID (A)
40
10
µs
0
P
µ
10
s
D W=
C
op 10
er m
at s (
io
n 1S
(T ho
C
1.0
= t)
25
°C
Operation in this area is
)
limited by RDS (on)
10
1
Channel Dissipation Pch (W)
60
Ta = 25°C
0.1
0
50
100
Case Temperature TC (°C)
1
150
Typical Transfer Characteristics
Typical Output Characteristics
10
10
15 V
Drain Current ID (A)
6
8V
6V
VDS = 10 V
Pulse Test
5.5 V
8
Drain Current ID (A)
10 V
8
Pulse Test
5V
4
2
4.5 V
6
4
2
VGS = 4 V
0
100
10
1,000
Drain to Source Voltage VDS (V)
4
8
12
16
Drain to Source Voltage VDS (V)
20
0
–25°C
75°C
TC = 25°C
2
4
6
8
10
Gate to Source Voltage VGS (V)
2SK741
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
VDS (on) (V)
10
PulseTest
8
6
ID = 10 A
4
5A
2
2A
0
4
8
12
16
Gate to Source Voltage VGS (V)
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
2
1.0
15 V
0.2
0.1
0.05
0.5
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
1.0
0.8
10 A
5A
0.6
ID = 2 A
0.4
0.2
0
–40
0
40
80
120
Case Temperature TC (°C)
1.0
2
5
10 20
Drain Current ID (A)
50
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
VGS = 10 V
0.5
160
50
20
10
5
VDS = 10 V
Pulse Test
–25°C
Ta = 25°C
75°C
2
1.0
0.5
0.2
0.5 1.0
2
5
Drain Current ID (A)
10
20
2SK741
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs.Drain to Source Voltage
2,000
10,000
VGS = 0
f = 1 MHz
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
Capacitance C (pF)
Reverse Recovery Time trr (ns)
5,000
1,000
500
200
1,000
Ciss
Coss
100
100
50
0.5
Crss
10
1.0
2
5
10
20
Reverse Drain Current IDR (A)
50
0
10
20
30
40
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
100 V
50 V
300
VDD = 200 V
100 V
50 V
8
12
VGS
VDS
100
0
16
VDD = 200 V
ID = 7 A
16
24
32
Gate Charge Qg (nc)
8
4
0
40
Switching Time t (ns)
400
200
500
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
500
50
200
VGS = 10 V
PW = 2µs, duty < 1 %
td (off)
100
tf
50
tr
20
td (on)
10
5
0.2
0.5 1.0 2
5
10
Drain Current ID (A)
20
2SK741
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
10
8
Pulse Test
6
4
2
5 V, 10 V
VGS = 0, –5 V
Normalized Transient Thermal Impedance γS (t)
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 2.5°C/W, TC = 25°C
PDM
D = PW
T
PW
T
0.1
0.1
0.03
0.01
10 µ
0.05
0.02
e
uls
tP
1
0.0 Sho
1
100 µ
1m
10 m
Pulse Width PW (s)
100 m
1
10
2SK741
Switching Time Test Circuit
Wavewforms
Vin Monitor
90 %
Vout Monitor
D.U.T
RL
Vin
Vout
10 %
10 %
10 %
50 Ω
Vin = 10 V
. 30 V
VDD =
.
td (on)
90 %
tr
90 %
td (off)
tf